IGBT MODULE Spec.No.IGBT-SP-08002 R5
P1
MBN1500E33E2
Silicon N-channel IGBT 3300V E2 version
FEATURES
∗ Soft switching behavior & low conduction loss:
Soft low-injection punch-through High conductivity IGBT.
∗ Low driving power due to low input capacitance MOS gate.
∗ Low noise recovery: Ultra soft fast recovery diode.
∗ High thermal fatigue durability:
(delta Tc=70K, N>30,000cycles)
AlSiC base-plate/AlN substrate
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1500E33E2
Collector Emitter Voltage V
CES
V 3,300
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,500
(Tc=95
o
C)
Collector Current 1ms I
Cp
A 3,000
DC I
F
1,500
Forward Current 1ms I
FM
A 3,000
Junction Temperature T
j
o
C -40 ~ +150
Storage Temperature T
stg
o
C -50 ~ +125
Isolation Voltage V
ISO
V
RMS
6,000(AC 1 minute)
Terminals
(M4/M8)
- 2/15 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/15
+0-3
N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=3,300V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 20 60 V
CE
=3,300V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
2.5 2.95
3.5 I
C
=1,500A, V
GE
=15V, Tj=125
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V - 3.1 - I
C
=1,500A, V
GE
=15V, Tj=150
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 5.5 6.3 7.5 V
CE
=10V, I
C
=1,500mA, Tj=25
o
C
Input Capacitance C
ies
nF - 195
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge Ω - 1.3 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
1.6 2.0 2.6 V
CC
=1,650V, Ic=1,500A
Turn On Time
t
on
2.0 3.0 3.5 Ls=100nH
Fall Time t
f
0.9 1.7 2.6 R
G
=2.7 Ω /2.7 Ω, CGE=330nF (3)
Switching Times
Turn Off Time t
off
µs
2.7 4.4 5.5 V
GE
=±15V, Tj=125
o
C
2.2 2.6 3.0 IF=1,500A, V
GE
=0V, Tj=125
o
C
Peak Forward Voltage Drop V
FM
V - 2.6 - IF=1,500A, V
GE
=0V, Tj=150
o
C
Reverse Recovery Time t
rr
µs 0.2 0.8 1.2 Vcc=1,650V, IF=1,500A, Ls=100nH
Tj=125
o
C
E
on(10%)
- 2.9 3.6
- 3.2 - Tj=125
o
C
Turn On Loss E
on(full)
J/P
- 3.5 - Tj=150
o
C
E
off(10%)
- 2.2 2.6
- 2.4 - Tj=125
o
C
Turn Off Loss E
off(full)
J/P
- 2.5 - Tj=150
o
C
E
rr(10%)
- 1.4 1.9
- 1.7 - Tj=125
o
C
Reverse Recovery Loss E
rr(full)
J/P
- 2.1 - Tj=150
o
C
V
CC
=1,650V, Ic=1,500A,
Ls=100nH, R
G
=2.7 Ω /2.7 Ω,
CGE=330nF (3)
V
GE
=±15V
Notes:(3) R
G
and C
GE
value are the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
DWN.
CHKD.
APPD.
M.Nakamura
'10.04.30
Y
.Koike
'10.04.30
M.Hiyoshi
'10.04.30
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P2
MBN1500E33E2
THERMAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Conditions
Stray inductance module L
SCE
nH - 12 -
IGBT Rth(j-c)
- - 0.0078
Thermal Impedance FWD Rth(j-c)
K/W
- - 0.0156
Junction to case
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.005
- Case to fin (λgrease=1W/(m
･
K),
heat-sink flatness ≤50um)
MODULE MECHANICAL CHARACTERISTICS
Item Unit
Characteristics Conditions
Weight g 1,300
LS(CM-EM) 12 Collector-main to Emitter-main
LS(ES-EM) 3.8 Emitter-sense to Emitter-main
Stray inductance in module
LS(CM-CS)
nH
6.4 Collector-main to Collector sense
Terminal Resistance R
Terminal
mΩ 0.09 Collector-main to Emitter-main
Comparative Tracking Index (CTI) 600
Module base plate Material Al-SiC
Baseplate Thickness mm 5
Insulation plate Material Al N
Terminal Surface treatment Ni plating
Case Material Poly-Phenilene Sulfide
Fire and Smoke Category I2 / F3 NFF 16-102
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P3
MBN1500E33E2
DEFINITION OF TEST CIRCUIT
Fig.2 Definition of stray inductance
Fig.1 Switching test circuit
Fig.3 Definition of switching loss
t4
t3
Ic
ton
tr
Vge
10%
10%
10%
90%
Vce
t
0
t
0
t1
t2
Eon(10%)=
∫
Ic
･
Vce dt
t4
t3
Eon(Full)=
∫
Ic
･
Vce dt
t2
t1
t5
90%
90%
Vge
Vce
Ic
10%
10%
toff
tf
t8
t7
t0
t0
t6
Eoff(10%)=
∫
Ic
･
Vce dt
t8
t7
Eoff(Full)=
∫
Ic
･
Vce dt
t6
t5
t12
t11
Err(10%)=
∫
IF
･
Vce dt
Err(Full)=
∫
IF
･
Vce dt
t10
t9
0.1IF
t9
t10
Vce
0.1Vce
0.5Irm
Irm
-Ic
trr
t12
t11
t
0
IF
Ic
t
0
VL
tL
Vce
t=t
L
Ls=
V
L
dIc
d
ｔ
(
)
Vcc
Ls
L
LOAD
Rg
Cge
G/D
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P4
MBN1500E33E2
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
0
500
1,000
1,500
2,000
2,500
3,000
0 2 4 6
Collector-Emitter Voltage, VCE(V)
Collector Current, IC(A)
Tc=25℃
VGE=15V 13V
Collecter Current vs. Collector to Emitter Voltage
TYPICAL
11V
9V
7V
0
500
1,000
1,500
2,000
2,500
3,000
0 2 4 6
Collector-Emitter Voltage, VCE(V)
Collector Current, IC(A)
Tc=125℃
VGE=15V 13V
Collecter Current vs. Collector to Emitter Voltage
TYPICAL
11V
9V
7V
0
500
1000
1500
2000
2500
3000
0 2 4 6
Collector-Emitter Voltage, VCE(V)
Collector Current, IC(A)
Tc=150℃
VGE=15V 13V
Collecter Current vs. Collector to Emitter Voltage
TYPICAL
11V
9V
7V
0
500
1000
1500
2000
2500
3000
0 1 2 3 4 5
Forward Voltage, VF(V)
Forward Current, IF(A)
VGE=0V
Forward Voltage of free-wheeling diode
TYPICAL
Tc=125℃
Tc=150℃
Tc=25℃
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P5
MBN1500E33E2
DYNAMIC CHARACTERISTICS
DEPENDENCE OF CURRENT
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0 500 1000 1500 2000 2500 3000
Collector Current, I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Turn-on Loss vs. Collector Current
TYPICAL
Eon(full)
Eon(10%)
Eon(full)
（
150
℃)
Eon(full)
（-4
0
℃)
Turn-on Loss, Eon(J/pulse)
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
∫
∫
⋅×=
⋅×=
2
1
4
3
10
T
TCEC
T
TCEC
dt)VI()full(Eon
dt)VI(%)(Eon
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0 500 1000 1500 2000 2500 3000
Collector Current, I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Turn-off Loss vs. Collector Current
TYPICAL
Eoff(full)
Eoff(10%)
Eoff(full)
(150
℃
)
Turn-off Loss, Eoff(J/pulse)
Eoff(full)
（
-40
℃）
V
GE
V
CE
I
C
10%
10%
t8
t7
t
0
0
t5
t6
∫
∫
⋅×=
⋅×=
6
5
8
7
10
T
TCEC
T
TCEC
dt)VI()full(Eoff
dt)VI(%)(Eoff
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 500 1000 1500 2000 2500 3000
Forward Current, I
F
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Recovery Loss vs. Forward Current
TYPICAL
V
CE
0.1V
CE
0.1I
F
I
RM
- I
C
t10
t11
t
0
t12
t9
I
F
∫
∫
⋅×=
⋅×=
10
9
12
11
10
T
TCEC
T
TCEC
dt)VI()full(Err
dt)VI(%)(Err
Err(full)
Err(10%)
Err(full)
(150
℃
)
Err(full)
（
-40
℃）
Reverse Recovery Loss, Err(J/pulse)
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P6
MBN1500E33E2
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 500 1000 1500 2000 2500 3000
Collector Current, I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=150℃
Tc=150℃Tc=150℃
Tc=150℃
Switching time vs. Collector current
TYPICAL
ton
tr
toff
tf
trr
Switching time, ton, tr, toff, tf, trr (µs)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 500 1000 1500 2000 2500 3000
Collector Current, I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Switching time vs. Collector current
TYPICAL
ton
tr
toff
tf
trr
Switching time, ton, tr, toff, tf, trr (µs)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 500 1000 1500 2000 2500 3000
Collector Current, I
C
(A)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
VG=±15V
VG=±15VVG=±15V
VG=±15V
RG=2.7Ω
RG=2.7ΩRG=2.7Ω
RG=2.7Ω
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=-40℃
Tc=-40℃Tc=-40℃
Tc=-40℃
Switching time vs. Collector current
TYPICAL
ton
tr
toff
tf
trr
Switching time, ton, tr, toff, tf, trr (µs)
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P7
MBN1500E33E2
DEPENDENCE OF Rg
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 1 2 3 4 5
Gate Resistance, RG(Ω)
Turn-on Loss, Eon(J/pulse)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
IC=1500A
IC=1500AIC=1500A
IC=1500A
VG=±15V
VG=±15VVG=±15V
VG=±15V
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Turn-on Loss vs. Gate Resistance
TYPICAL
Eon(full)
Eon(10%)
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
∫
∫
⋅×=
⋅×=
2
1
4
3
10
T
TCEC
T
TCEC
dt)VI()full(Eon
dt)VI(%)(Eon
Turn-off Loss vs. Gate Resistance
TYPICAL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4 5
Gate Resistance, RG(Ω)
Turn-off Loss, Eoff(J/pulse)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
IC=1500A
IC=1500AIC=1500A
IC=1500A
VG=±15V
VG=±15VVG=±15V
VG=±15V
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Eoff(full)
Eoff(10%)
VGE
VCE
IC
10%
10%
t8
t7
t
0
0
t5
t6
∫
∫
⋅×=
⋅×=
6
5
8
7
10
T
TCEC
T
TCEC
dt)VI()full(Eoff
dt)VI(%)(Eoff
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4 5
Gate Resistance, RG(Ω)
Reverse Recovery Loss, Err(J/pulse)
【
【【
【Conditions
ConditionsConditions
Conditions】
】】
】
Ls=100nH
Ls=100nHLs=100nH
Ls=100nH
Vcc=1650V
Vcc=1650VVcc=1650V
Vcc=1650V
IC=1500A
IC=1500AIC=1500A
IC=1500A
VG=±15V
VG=±15VVG=±15V
VG=±15V
CGE=330nF
CGE=330nFCGE=330nF
CGE=330nF
Tc=125℃
Tc=125℃Tc=125℃
Tc=125℃
Recovery Loss vs. Gate Resistance
TYPICAL
Err(full)
Err(10%)
VCE
0.1VCE
0.1I
F
I
RM
- IC
t10
t11
t
0
t12
t9
I
F
∫
∫
⋅×=
⋅×=
10
9
12
11
10
T
TCEC
T
TCEC
dt)VI()full(Err
dt)VI(%)(Err
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P8
MBN1500E33E2
OUTLINE DRAWINGS
C
G
E
C
E
C
E
C
E
Baseplate flatness test
(1)Convex measurement (2) 8 points gap measurement
Convex max ≤ +250µm Gap ≤ +50µm
160mm
1
1
0
m
m
122mm
158.2mm
5
2
.
6
m
m
Convex measurement area Base gap measurement points
Unit in mm
Circuit diagram
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IGBT MODULE Spec.No.IGBT-SP-08002 R5
P9
MBN1500E33E2
TRANSIENT THERMAL IMPEDANCE
Transient Thermal Impedance Curve
Maximum
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
IGBT
IGBTIGBT
IGBT
FWD
FWDFWD
FWD
Transient thermal impedance : Rth(j-c) (K/W)
Time : t(s)
RBSOA
0
500
1000
1500
2000
2500
3000
3500
0 500 1000 1500 2000 2500 3000 3500
VCE( spike Voltage ) (V) (at auxiliary terminal)
VceIc
t0
Definition of RBSOA waveform
IC( to be turned off )
VCE( spike Voltage )
IC( to be turned off ) (A)
Conditions: Vcc≤
≤≤
≤2000V, Ic≤
≤≤
≤3000A,
Rg≥
≥≥
≥2.7Ω
ΩΩ
Ω, Cge≥
≥≥
≥330nF
VGE=+-15V, -40
o
C≤
≤≤
≤Tj≤
≤≤
≤150
o
C,
Ls≤
≤≤
≤290nH, on pulse width≥
≥≥
≥ 10us
( Vce spike voltage and Ls are define d
at auxiliary terminal)
Reverse bias safe operation area ( RBSOA )
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IGBT MODULE
Spec.No.IGBT-SP-08002 R5
P10
MBN1500E33E2
QG-VG CURVE
Conditions:Ls=100nH, VCC=1650V, IC=1500A,
VGE=+/-15V, Tj=25
o
C,
TYPICAL
QG-VGE curve
-15
-10
-5
0
5
10
15
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
QG (µ
µµ
µC)
VGE (V)
Cies,Coes,Cres Curve
1
10
100
1000
0.1 1.0 10.0 100.0
Collector to Emitter Voltage, VCE (V)
Cies, Coes, Cres (nF)
【
【【
【
Conditions
】
】】
】
Tj=25
℃
℃℃
℃
f=100kHz
TYPICAL
Capacitance vs. Collector to Emitter Voltage
Cies
Coes
Cres
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IGBT MODULE
Spec.No.IGBT-SP-08002 R5
P11
MBN1500E33E2
COSMIC RAY FAILURE RATE
Expected Cosmic Ray Failure Rate (at Sea Level)
0
1
10
100
1000
10000
1400 1600 1800 2000 2200
Vce
(V DC)
Expected Failure Rate (Fit)
TYPICAL
Negative environmental impact material
Please note the following materials are contained in the product,
in order to keep characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
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IGBT MODULE
Spec.No.IGBT-SP-08002 R5
P12
MBN1500E33E2
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/
Notices
NoticesNotices
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sale
s department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-
related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-
safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data shee
ts. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in
a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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