PBSS5540X,135 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 2004 Jan 15 2004 Nov 04

DISCRETE SEMICONDUCTORS

PBSS5540X

40 V, 5 A

PNP low VCEsat (BISS) transistor

ook, halfpage

M3D109

2004 Nov 04 2

NXP Semiconductors Product data sheet

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

FEATURES

•Low collector-emitter saturation volt age VCEsat

•High collector current capability: IC and ICM

•High efficiency leading to less heat generation.

APPLICATIONS

•Supply line switching circuits

•Battery manageme nt applications

•DC/DC converter applications

•Strobe flash units

•Medium power driver (e.g. relays, buzzers and motors).

DESCRIPTION

PNP low VCEsat transistor in a medium power SOT89

(SC-62) package.

NPN complement: PBSS4540X.

MARKING

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE(1)

PBSS5540X *1G

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −40 V

ICcollector current (DC) −4 A

ICRP repetitive p ea k co llector

current −5 A

RCEsat equivalent

on-resistance 75 mΩ

PIN DESCRIPTION

1emitter

2collector

3base

321

sym07

Fig.1 Simplified outline (SOT89 ) and symbo l .

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS5540X SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads SOT89

2004 Nov 04 3

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

LIMITING VALUES

In accordance with th e Absolute Maximum Rating System (IEC 60134).

Notes

1. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and standard footprint.

2. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and mounting pad for colle ctor 1 cm2.

3. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and mounting pad for colle ctor 6 cm2.

4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter − −40 V

VCEO collector-emitter voltage open base − −40 V

VEBO emitter-base voltage open collector − −6 V

ICM peak collector current tp ≤ 1 ms − −10 A

ICRP repetitive peak colle ctor current tp ≤ 10 ms; δ ≤ 0.2 − −5 A

ICcollector current (DC) − −4 A

IBM peak base current tp ≤ 1 ms − −2 A

IBbase current (DC) − −1 A

Ptot total power dissipation Tamb ≤ 25 °C

tp ≤ 10 ms; δ ≤ 0.2; no te 1 −2.5 W

note 1 −0.55 W

note 2 −1 W

note 3 −1.4 W

note 4 −1.6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Nov 04 4

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

Tamb (°C)

−50 20015050 1000

001aaa229

800

400

1200

1600

Ptot

(mW)

(1)

(2)

(3)

Fig.2 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4 PCB; standard footprint .

2004 Nov 04 5

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

THERMAL CHARACTE RISTICS

Notes

1. Pulse test: tp ≤ 10 ms; δ ≤ 0.2.

2. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and standard footprint.

3. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and mounting pad for colle ctor 1 cm2.

4. Device moun ted on a printed-circuit board, s ingle -sided copper, tin-p lated and mounting pad for colle ctor 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air

notes 1 and 2 50 K/W

note 2 225 K/W

note 3 125 K/W

note 4 90 K/W

note 5 80 K/W

Rth(j-s) thermal resistance from junction to

soldering point 16 K/W

006aaa232

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on FR4 printed - circuit board; standard footprint.

2004 Nov 04 6

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

006aaa233

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(5)

(6)

(7)

(8)

(9)

(10)

(1) (2)

(3) (4)

Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for coll ector 1 cm2.

006aaa234

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(6)

(7)

(8)

(9)

(10)

(1)

(5) (4)

(3) (2)

Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for coll ector 6 cm2.

2004 Nov 04 7

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-b ase cut-off current VCB = −30 V; IE = 0 A −−−100 nA

VCB = −30 V; IE = 0 A;

Tj = 150 °C−−−50 μA

IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A −−−100 nA

hFE DC current gain VCE = −2 V; IC = −0.5 A 250 − −

VCE = −2 V; I C = −1 A;

note 1 200 − −

VCE = −2 V; I C = −2 A;

note 1 150 − −

VCE = −2 V; IC = −5 A;

note 1 50 − −

VCEsat collector-emitter saturation

voltage IC = −0.5 A; IB = −5 mA −−120 mV

IC = −1 A; IB = −10 mA −−170 mV

IC = −2 A; IB = −200 mA −−160 mV

IC = −4 A; IB = −200 mA;

note 1 −−340 mV

IC = −5 A; IB = −500 mA;

note 1 −−375 mV

RCEsat equivalent on-resistance IC = −5 A; IB = −500 mA;

note 1 −45 75 mΩ

VBEsat base-emitter saturation

voltage IC = −4 A; IB = −200 mA;

note 1 −−−1.1 V

IC = −5 A; IB = −500 mA;

note 1 −−−1.2 V

VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A −−−1.0 V

fTtransition frequency VCE = −10 V; IC = −0.1 A;

f = 100 MHz 60 −−MHz

Cccollector capacitance VCB = −10 V; IE = ie = 0 A;

f = 1 MHz −−105 pF

2004 Nov 04 8

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

VCE (V)

0−2−1.5−0.5 −1

001aaa157

−4

−2

−6

−8

(A)

(1)

(2)

(3)

(4)

(5)

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB1 = −11 mA.

(2) IB2 = −22 mA.

(3) IB3 = −33 mA.

(4) IB4 = −44 mA.

(5) IB5 = −55 mA.

001aaa158

−0.4

−0.8

−1.2

VBE

(V)

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

Fig.7 Base-emitte r voltage as a function of

collector current; typical values.

(1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.

VCE = −2 V.

001aaa159

400

600

200

800

1000

hFE

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

Fig.8 DC current ga in as a function of collector

current; ty pical values.

(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

VCE = −2 V.

001aaa160

IC (mA)

−10−1−104

−103

−1−102

−10

10−1

102

RCEsat

(Ω)

10−2

(1)

(2)

(3)

Fig.9 Equivalent on-resistance as a functio n of

collector current; typical values.

(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

IC/IB = 20.

2004 Nov 04 9

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

001aaa161

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2) (3)

Fig.10 Collec to r-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.

IC/IB = 20.

001aaa162

−10−1

−10−2

−1

VCEsat

(V)

−10−3

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

Fig.11 Collec to r-emitter saturation voltage as a

function of collector current; typical values.

(1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10.

Tamb = 25 °C.

001aaa163

IC (mA)

10−1−104

−103

−1−102

−10

−1

−10

VBEsat

(V)

−10−1

(1)

(2)

(3)

Fig.12 Base- emitte r s atur ation v oltag e as a

function of collector current; typical values.

(1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.

IC/IB = 20.

001aaa164

−0.4

−0.8

−1.2

VBE

(V)

IC (mA)

−10−1−104

−103

−1−102

−10

Fig.13 Base- emitte r voltage as a function of

collector current; typical values.

Tamb = 25 °C.

2004 Nov 04 10

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

Reference mounting conditions

001aaa234

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

3 mm

2.5 mm

1 mm

32 mm

Fig.14 FR4, standard footprin t.

handbook, halfpage

MLE322

40 mm

32 mm

2.5 mm

10 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

10 mm

Fig.15 FR4, mounting pad for collector 1 cm2.

001aaa235

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

30 mm

32 mm

Fig.16 FR4, mounting pad for collector 6 cm2.

2004 Nov 04 11

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 04 12

NXP Semiconductors Pr oduct data shee t

40 V, 5 A

PNP low VCEsat (BISS) transistor PBSS5540X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completin g a design.

2. The prod uct status of devi ce(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

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not complete, exhaus tive or legally binding.

NXP Semiconductors

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 04 Document orde r number: 9397 750 13893