TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
1
NOV EMBE R 1997 - REVISED AP RIL 1999Copyright © 1999, Power Innovations Limited, UK
Information is current as of public ation date. Products conf orm to specificatio ns in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily incl ude testing of all par ameters.
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PR OTECTORS
●8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
●Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
●Rated for International Surge Wave Shapes
●Low Differential Capacitance . . . 80 pF max.
DEVICE VDRM
V
V(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4220 160 220
‘4240 180 240
‘4260 200 260
‘4300 230 300
‘4350 275 350
‘4400 300 400
WAVE SHAPE STA NDARD ITSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K20/21
FCC Part 68 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100 ●Ordering Information
DEVICE TYPE PACKAGE TYPE
TISP4xxxH3LM Straight Lead DO-92 Bulk Pack
TISP4xxxH3LMR Straight Lead DO-92 Tape and Reeled
TISP4xxxH3LMFR Formed Lead DO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or ligh tni ng f las h dis tu rbanc es whi ch ar e ind uc ed or co nducted o n to the tel eph one li ne. A
single dev ice provide s 2-point protection and is ty pically u sed for the protec tion of 2- wire telec ommunicatio n
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
over voltage to be safely divert ed through the device. The high crowbar holdin g current prevents d.c. latchu p
as the diverted current subsides.
device symbol
LMF PACKAGE
(LM PACKAGE WITH FORMED LEAD S)
(TOP VIEW)
NC - No internal connectio n on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
LM PACKAGE
(TOP VIEW)
NC - No internal connection on pin 2
NC
T(A)
R(B) MD4XAT
1
2
3
T
RSD4XAA
Term inals T and R correspond t o the
alternative line designators of A and B
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
This TISP4xxxH3LM range consists of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges i n both pol ariti es. These protec tion devices are su pplied i n a DO-92 (LM) cylin drical plastic package.
The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings, TA = 25°C (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
VDRM
± 58
± 65
± 75
±100
±120
±135
±145
±160
±180
±200
±230
±275
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 300
10/160 µs (FCC P art 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
5/320 µs (FCC P art 68, 9/720 µs voltage wave shape) 200
10/560 µs (FCC P art 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
55
60
2.3 A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wa ve
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp , Maximum ramp v alue < 100 A di T/dt 400 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially the TISP4xxxH3LM must be in thermal equilibrium with TJ= 25°C.
3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD 51-3 PCB with standard footprint dimensions connected with 5 A rated printed w iring
trac k widths . See Figure 8 for the current ratings at other durations . Derate current v alues at -0. 61 %/°C for ambient temperatu res
above 25 °C
descr
i
pt
i
on
(
cont
i
nued
)
3
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
electri cal characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM Repetitive peak off-
state current VD = ±VDRM TA = 25°C
TA = 85°C ±5
±10 µA
V(BO) Breakover v oltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
±70
±80
±95
±125
±145
±165
±180
±220
±240
±260
±300
±350
±400
V
V(BO) Impulse breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ram p,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
±78
±88
±102
±132
±151
±171
±186
±227
±247
±267
±308
±359
±410
V
I(BO) Break over current dv/dt = ±750 V/ms, RSOURCE = 300 Ω±0.15 ±0.6 A
VTOn-state voltage IT=±5A, t
W= 100 µs ±3 V
IHHolding current IT= ±5 A, di/dt = +/-30 mA/ms ±0.15 ±0.6 A
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5 kV/µs
IDOff-state current VD=±50V T
A = 85°C ±10 µA
Coff Off-state capacitance
f = 100 kHz, Vd=1V rms, V
D=0,
f = 100 kHz, Vd=1V rms, V
D=-1V
f = 100 kHz, Vd=1V rms, V
D=-2V
f = 100 kHz, Vd=1V rms, V
D=-50V
f = 100 kHz, Vd=1V rms, V
D= -100 V
(see Note 6)
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
172
95
92
157
85
80
145
78
72
70
33
28
25
22
218
120
115
200
110
100
185
100
90
90
43
35
33
28
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
4
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
thermal characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RθJA Junction to free air thermal resistance
EIA/JESD51 -3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7) 105 °C/W
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C 55
NOTE 7: EIA/JESD51-2 environment and PCB has standard footpr int dimensions connected with 5 A rated printed wiring track widths.
PAR AMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
-v VDRM
IDRM
VD
IH
IT
VT
ITSM
ITSP
V(BO)
I(BO)
ID
Qua drant I
Switching
Characteristic
+v
+i
V(BO)
I(BO)
VD
ID
IH
IT
VT
ITSM
ITSP
-i
Quadrant III
Switching
Characteristic PMXXAAB
VDRM
IDRM
5
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
vs
JUNCTION TEMPE RAT URE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
10-5
10-4
10-3
10-2
10-1
100
101
102TCHAS
VD = ±50 V
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normali sed Breakover Voltage
0.95
1.00
1.05
1.10 TC4HAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
VT - On-State V o ltage - V
0.7 1.5 2 3 4 5 7110
IT - On-State Cu rrent - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
TC4HAC
'4070
THRU
'4095
'4125
THRU
'4200
'4240
THRU
'4400
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normal ise d Holdi ng Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
6
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 6. Figure 7.
NORMALI SED CAP ACI T ANCE
vs
OFF-STATE VOLTAGE
VD - Off-state V olta g e - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalised to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
'4070 THRU '4095
TJ = 25°C
Vd = 1 Vrms
TC4HAQ
'4125 THRU '4220
'4240 THRU '4400
TCHAE
DIFFERENTIAL OFF-S T ATE CAPACI TANCE
vs
RATED REPETI TI VE PEAK OFF-STAT E VOLTAG
E
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
∆
∆∆
∆C - Differen tial Off-State Ca p acitanc e - p F
40
45
50
55
60
65
70
75
80
85
90
∆
∆∆
∆C = Coff(-2 V) - Coff(-50 V)
'4070
'4080
'4095
'4125
'4145
'4165
'4180
'4260
'4300
'4350
'4400
'4220
'4240
7
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
RATING AND THERMAL INFORMATION
Figure 8. Figure 9.
Figure 10. Figure 11.
NON-R EPE T I TI VE P EAK ON-S T ATE CURRENT
vs
CURRENT DURAT IO N
t - Current Dura tion - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4HAH
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51 -2 ENVIRONM ENT
EIA/JESD51 -3 PCB
TA = 25 °C
THERM A L I M P EDANCE
vs
POWER DURAT I ON
t - Power Duratio n - s
0·1 1 10 100 1000
Zθ
θθ
θJA(t) - Transient Thermal Impedance - °C/W
2
3
4
5
6
8
15
20
30
40
50
60
80
150
10
100
TI4HAG
ITSM(t) APPLIED FOR TIME t
EIA/JESD51 -2 ENVIRONM ENT
EIA/JESD51 -3 PCB
TA = 25 °C
VDRM DERATING FACTOR
vs
MINI M UM AMBI ENT TE M PE RAT URE
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4HAI
'4070 THRU '4095
'4240 THRU '4440
'4125 THRU '4220
IMPULSE RATING
vs
AMBIENT TEMPERATURE
TA - Ambient Temperature - ° C
-40-30-20-100 1020304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1 .2/50 , 8/20
ITU-T 10/ 700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
8
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
APPLICATIONS INFORMATION
deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage
between two conductors (Figure 12) or in multiples to limit the voltage at se v eral points in a circuit (Figure 13).
In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This
configu ration is nor ma lly used to protect ci rcuits wit hout a ground re fer ence, such as mod ems. In Figure 13,
protec tors Th2 and Th3 l imit the maxi mum voltage be tween each cond uctor and groun d to the ±V (BO) of the
individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors
and ground, then protector Th1 is not required.
impulse testing
To ver ify the wit hstand capabilit y and safety of the equipment, stan dards req uire that the equipment is tested
with various impulse wave forms. The table below shows some common values.
If the impul se g enerator c urrent exce eds the protec tors c urrent rating the n a s eri es res istan ce can be us ed
to reduce the current to the protectors rated value and so prevent possible failure. The required value of
series resistance for a given wavefor m is given by the following calculations. First, the minimum total circuit
impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The
impuls e generators fictive impe dance (gene ra tors peak vol tage divided by peak shor t c ircuit curren t) is then
subtracte d from th e min imum total circui t impe dance to give the require d value of ser i es resis tance. In some
cases th e equipment will require ver ification over a temperature range. By using the rated wavefor m va lues
from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range
of -40 °C to 85 °C.
Figure 12. TWO POINT PROTECTION Figure 13. MULTI-POINT PROTECTION
STANDARD PEAK VOLTAGE
SETTING
V
VOL TAGE
WAVE FORM
µs
PEAK CURRENT
VALUE
A
CURRENT
WAVE FORM
µs
TISP4xxxH3
25 °C RATING
A
SERIE S
RESISTANCE
Ω
GR-1089-CORE 2500 2/10 500 2/10 500 0
1000 10/1000 100 10/1000 100
FCC Part 68
(March 1998)
1500 10/160 200 10/160 250 0
800 10/560 100 10/560 160 0
1500 9/720 † 37.5 5/320 † 200 0
1000 9/720 † 25 5/320 † 200 0
I3124 1500 0.5/700 37.5 0.2/310 200 0
ITU-T K20/K21 1500
4000 10/700 37.5
100 5/310 200 0
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
Th1
Th3
Th2
Th1
9
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
a.c. power testing
The protec tor can withs tand curre nts applied for times n ot exc eeding thos e shown in Figure 8 . Currents tha t
exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive
Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used
to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In
some cases it may be necessary to add some extra series resistance to prevent the fuse opening during
impulse testing. The current versus time characteristic of the overcurrent protector must be below the line
shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL
1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V,
-2 V and -50 V. W here possible values are also given for -100 V. Values for other voltages m ay be calc ulate d
by multiplying the VD= 0 capacit ance value by the fac tor given in Figure 6. Up to 10 M Hz the ca pacitanc e is
essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on
connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias
voltag es wi ll be about - 2 V a nd -5 0 V. Fi gure 7 shows the di fferential (lin e u nbalance ) capacitance caused by
biasing one protector at -2 V and the other at -50 V.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual
conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this
condition about 10 V of clipping is normally possible without activating the ring trip circuit.
Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated
value should not be less than the maximum normal system voltages. The TISP4260H3LM, with a VDRM of
200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of
-58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However , this is the
open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the
extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This
level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 °C
value. Figure 10 shows that this condition will occur at an ambient temperature of -22 °C. In this example, the
TISP4260H3LM will allow normal equipment operation provided that the minimum expected ambient
temperature does not fall below -22 °C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51
standard. P art 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3)
cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the
standar d (JESD51- 3, 1996) defines two test PCBs for surface mount compon ents; one for packages smaller
than 27 mm on a side and the other for packages up to 48 mm. The LM package measurements used the
smaller 76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective
ther mal condu ctivity (hig h ther mal resistan ce) and rep resent a worse cas e condition. The PCBs used i n the
majority of applications will achieve lower values of thermal resistance and so can dissipate higher power
levels than indicated by the JESD51 values.
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
10
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
typical circuits
Figure 14. MODEM INTER-WIRE PROTECTION Figure 15. PROTECTION MODULE
Figure 16. ISDN PROTECTION
Figure 17. LINE CARD RING/TEST PROTECTION
FUSE
TISP4350
OR
TISP4400
AI6XBM
RING DETECTOR
HOOK SWITC H
D.C. SINK
SIGNAL
MODEM
RING
WIRE
TIP
WIRE R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
PROTECTED
EQUIPMENT
E.G. LINE CARD
AI6XBK
R1a
R1b
Th3
Th2
Th1
AI6XBL
SIGNAL
D.C.
TEST
RELAY RING
RELAY SLIC
RELAY
TEST
EQUIP-
MENT RING
GENERATOR
S1a
S1b
R1a
R1b
RING
WIRE
TIP
WIRE
Th3
Th2
Th1
Th4
Th5
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
OVER-
CURRENT
PROTECTION
S2a
S2b
S3a
S3b
VBAT
C1
220 n F
AI6XBJ
TISP6xxxx,
TISPPBLx,
½TISP6NTP2
11
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
MECHANICAL DATA
device symbolization code
Devices will be coded as below.
carrier inf o rmation
Devices are shipped in one of the carriers below. A reel contains 2 000 devices.
DEVICE SYMOBLIZATION
CODE
TISP4070H3 4070H3
TISP4080H3 4080H3
TISP4095H3 4095H3
TISP4125H3 4125H3
TISP4145H3 4145H3
TISP4165H3 4165H3
TISP4180H3 4180H3
TISP4220H3 4220H3
TISP4240H3 4240H3
TISP4260H3 4260H3
TISP4300H3 4300H3
TISP4350H3 4350H3
TISP4400H3 4400H3
PACKAGE TYPE CARRIER ORDER #
Straight Lead DO-92 Bulk Pack TISP4xxxH3LM
Straight Lead DO-92 Tape and Reeled TISP4xxxH3LMR
Formed Lead DO-92 Tape and Reeled TISP4xxxH3LMFR
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
12
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
MECHANICAL DATA
LM002 (DO-92)
2-pin cylindr ical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly. .
LM002 Package (DO -92)
ALL LINEAR DIMENSIONS IN MILLIMETERS
MD4XARA
2,20 MAX.
3,43 MIN.
12,7 MIN.
5,21
4,44
2,67
2,03
0,56
0,40
1,40
1,14
2,67
2,41
5,34
4,32
1 3
2A
0,41
0,35
2,67
2,03
4,19
3,17
3 1
2
VIEW A
13
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
MECHANICAL DATA
LM002 (DO-92) - Formed Leads Version
2-pin cylindrical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
ALL LINEAR DIMENSIONS IN MILLIMETERS
LMF002 (DO-92) - Formed Leads Version of LM002
MD4XASA
0,41
0,35
2,67
2,03
4,19
3,17
A
VIEW A
3 1
2
2,20 MAX.
3,43 MIN.
5,21
4,44
2,67
2,03
5,34
4,32
0,56
0,40
4,00 MAX.
2,90
2,40
2,90
2,40
1 3
2
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
14
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
MECHANICAL DATA
tape dimensions
LM002 Package (Straight Lead DO-92) Tape LM002 Tape Dimensions Conform to
the Requirements of EIA-468-B
ALL LINEAR DIMENSIONS IN MILLIMETERS
11,00
8,50
27,68
17,66
32,00
23,00 2,50 MIN.
5,48
4,68
3,14
2,14
13,00
12,40
13,70
11,70
19,00
17,50
19,00
5,50
0,50
0,00
9,75
8,50
φ
φφ
φ4,30
3,70
MD4XAPC
Adhesive Tape on Reverse
Side - Shown Dashed
Body Indent Visible
Direction of Feed
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
VIEW A
15
NOV EMBE R 1997 - REVISED AP RIL 1999
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
PRODUCT INFORMATION
MECHANICAL DATA
tape dimensions
φ
φφ
φ
4,21
3,41
5,28
4,88
13,00
12,40
11,00
8,50
16,53
15,50
27,68
17,66
32,00
23,00
13,70
11,70
2,50 MIN.
19,00
17,50
19,00
5,50
0,50
0,00
9,75
8,50
4,30
3,70
ALL LINEAR DIMENSIONS IN MILLIMETERS
LMF002 Package (Formed Lead DO-92) Tape LMF002 Tape Dimensions Conform to
the Requirements of EIA-468-B
MD4XAQC
Adhesive Tape on Reverse
Side - Shown Dashed
Body Indent Visible
VIEW A
Tape Section
Shown in
View A
Flat of DO-92 Body
Towards Reel Axis
Direction of Feed
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
16
NOV EM BER 1997 - REVISED APRIL 1999
PRODUCT INFORMATION
IMPORTANT NOTICE
Power I nnovatio ns Li mit e d (P I ) r e serves the rig ht to ma ke ch ang es t o its pr o d ucts o r to di sc on tinu e any s em ic o nd uc tor p ro du ct
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's sta nda rd warranty. Testing and ot her quality cont rol tec hn iqu es are uti li z ed to the extent PI dee ms ne ce ss ary to sup port t his
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software perfor mance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
