1SS422 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Unit: mm * Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA * Small package suitable for mounting on a small space Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200* mA Average forward current IO 100* mA Surge current (10 ms) IFSM 1* A Power dissipation P 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C Operating temperature range Topr -40~100 C * : This is the maximum rating for a single diode . Where two diodes are used, the maximum rating per diode is 75% that for the single diode. 1.ANODE1 2.CATHODE2 3.CATHODE1 ANODE2 JEDEC JEITA TOSHIBA 1-2S1C Weight: 0.0024 g (typ.) Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Reverse current Total capacitance (between Cathode and Anode) Symbol Test Condition Min Typ. Max VF (1) IF = 1 mA 0.18 VF (2) IF = 5 mA 0.23 VF (3) IF = 100 mA 0.38 0.5 IR (1) VR = 10 V 20 IR (2) VR = 30 V 50 VR = 0, f = 1 MHz 15 CT Unit V A pF Marking U9 1 2005-03-23 1SS422 IF - VF IR - VR 100 100m 1000 1m Ta = 100C Ta = 100C 75 10 10m 100 100u REVERSE CURRENT IR (A) 50 25 0 -25 1m 1 0.1 100u 0.01 10u 0 0.1 0.2 0.3 0.4 50 25 10 10u 0 1 1u -25 100n 0 10n 0 1n 0 0.5 0 FORWARD VOLTAGE VF (V) 10 20 30 REVERSE VOLTAGE VR (V) CT - VR 100 TOTAL CAPACITANCE CT (pF) FORWARD CURRENT IF (A) 75 Ta = 25C f = 1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2 2005-03-23 1SS422 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2005-03-23