1SS422
2005-03-23
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS422
High-Speed Switching Applications
• Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA
• Small package suitable for mounting on a small space
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 35 V
Reverse voltage VR 30 V
Maximum (peak) forward current IFM 200* mA
Average forward current IO 100* mA
Surge current (10 ms) IFSM 1* A
Power dissipation P 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Operating temperature range Topr −40~100 °C
* : This is the maximum rating for a single diode . Where two diodes are
used, the maximum rating per diode is 75% that for the single diode.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
VF (1) IF = 1 mA ― 0.18 ―
VF (2) IF = 5 mA ― 0.23 ―
Forward voltage
VF (3) IF = 100 mA ― 0.38 0.5
V
IR (1) VR = 10 V ― ― 20
Reverse current
IR (2) V
R = 30 V ― ― 50 µA
Total capacitance
(between Cathode and Anode) CT VR = 0, f = 1 MHz ― 15 ― pF
Marking
U9
1.ANODE1
2.CATHODE2
3.CATHODE1
ANODE2
JEDEC ―
JEITA ―
TOSHIBA 1-2S1C
Weight: 0.0024 g (typ.)
Unit: mm
1SS422
2005-03-23
2
IF - VF
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5
Ta = 100°C
75
50
25 0
−25
1m
10m
100m
100u
10u
FORWARD VOLTAGE VF
(
V
)
FORWARD CURRENT IF (A)
IR - VR
0
0
0
1
10
100
1000
0102030
1m
100u
10u
1u
100n
10n
1n
Ta = 100°C
75
50
25
0
−25
REVERSE VOLTAGE VR (V)
REVERSE CURRENT IR (A)
CT - VR
1
10
100
0 5 10 15 20 25 30
Ta = 25°C
f = 1MHz
REVERSE VOLTAGE VR (V)
TOTAL CAPACITANCE CT (pF)
1SS422
2005-03-23
3
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and
sold, under any law and regulations.
030619EA
A
RESTRICTIONS ON PRODUCT USE
