IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH320N10T2
IXFT320N10T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 80 130 S
Ciss 26 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2250 pF
Crss 450 pF
RGi Gate Input Resistance 1.48 Ω
td(on) 36 ns
tr 46 ns
td(off) 73 ns
tf 177 ns
Qg(on) 430 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 110 nC
Qgd 125 nC
RthJC 0.15 °C/W
RthCH TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 320 A
ISM Repetitive, Pulse Width Limited by TJM 1200 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 98 ns
IRM 6.6 A
QRM 320 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
IF = 150A, VGS = 0V
-di/dt = 100A/μs
VR = 50V
e
∅ P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXFT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain