© 2012 IXYS CORPORATION, All Rights Reserved DS100237A(5/12)
IXFH320N10T2
IXFT320N10T2
TrenchT2TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C (Chip Capability) 320 A
ILRMS Lead Current Limit, RMS 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 800 A
IATC= 25°C 160 A
EAS TC= 25°C 1.5 J
dv/dt IS IDM, VDD VDSS, TJ 175°C 15 V/ns
PDTC= 25°C 1000 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Tsold Plastic Body for 10 seconds 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 25 μA
TJ = 150°C 1.75 mA
RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 3.5 mΩ
VDSS = 100V
ID25 = 320A
RDS(on)
3.5mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
TO-268 (IXFT)
G
SD (Tab)
S
G
D (Tab)
D
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
z Fast Intrinsic Diode
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSynchronous Recification
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
Applications
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH320N10T2
IXFT320N10T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Includes lead resistance.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 80 130 S
Ciss 26 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2250 pF
Crss 450 pF
RGi Gate Input Resistance 1.48 Ω
td(on) 36 ns
tr 46 ns
td(off) 73 ns
tf 177 ns
Qg(on) 430 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 110 nC
Qgd 125 nC
RthJC 0.15 °C/W
RthCH TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 320 A
ISM Repetitive, Pulse Width Limited by TJM 1200 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 98 ns
IRM 6.6 A
QRM 320 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
IF = 150A, VGS = 0V
-di/dt = 100A/μs
VR = 50V
e
P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXFT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source 4 - Drain
© 2012 IXYS CORPORATION, All Rights Reserved
IXFH320N10T2
IXFT320N10T2
Fi g . 1. Ou tput C h aracteri st i cs @ T
J
= 25ºC
0
40
80
120
160
200
240
280
320
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
8V
7V
5V
6V
4V
Fi g . 3. Ou tp ut Ch ar act er i stics @ T
J
= 150º C
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
8V
7V
5
V
6
V
4
V
Fig. 4. R
DS(on)
No r malized t o I
D
= 160A Val u e
vs. Ju nctio n Temperatu r e
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 320A
I
D
= 160A
Fig. 5. R
DS(on)
Normalized to I
D
= 160A
vs. D rain C u rren t
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 50 100 150 200 250 300 350 400
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n Cu rren t vs. C a se Temper ature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
External Lead Current limit
Fi g . 2. Exten d ed Output C h ar acter ist ics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Volts
ID - Amperes
V
GS
= 15V
10V
7V
4V
5V
6V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH320N10T2
IXFT320N10T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
220
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
2C
- 4C
Fig. 8. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 50 100 150 200 250 300 350 400 450
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 160A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12 . F orwar d-Bi as Sa fe Op er at ing Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
DC
RDS(on) Limit
TJ = 175ºC
TC = 25ºC
Single Pulse
External Lead Limit
100ms
© 2012 IXYS CORPORATION, All Rights Reserved
IXFH320N10T2
IXFT320N10T2
Fig . 14. R esistive Tur n -on Ri se Time vs.
Dr ai n C u r r ent
0
50
100
150
200
250
300
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
Fig. 15. Resisti ve Tur n -on Switching Times vs.
Gate Re si stan ce
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
130
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 16. Resisti ve Tur n -off Swi tchin g Times vs.
Junction T em p erature
100
150
200
250
300
350
400
450
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
60
70
80
90
100
110
120
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
I
D
= 100A
I
D
= 200A
Fig. 1 7. Resist ive Tu r n-off Switchi ng Times vs.
Drain Current
0
50
100
150
200
250
300
350
400
450
500
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
60
65
70
75
80
85
90
95
100
105
110
t d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
T
J
= 125ºC
Fig. 1 3. Resist ive Turn-on R ise Ti me vs.
Junction T em perature
0
50
100
150
200
250
300
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
Fig . 18. R esistive Tur n -off Switchi n g Ti mes vs.
Gate Resistance
0
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f
- Nanoseconds
50
100
150
200
250
300
350
400
450
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH320N10T2
IXFT320N10T2
IXYS REF: F_320N10T2(98)02-01-10
Fi g . 19. Maxi mum Tr an si en t Thermal I mped an ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 19. Maximum Transient Thermal Impedance
dfafas
0.300