2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Publication Order Number:
NDS7002A/D
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Ordering Information
Part Number Marking Package Packing Method Min Order Qty /
Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000
Description
These N-channel enhancement mode field effect transis-
tors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly suited for low-voltage, low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
1. Source 2. Gate 3. Drain
TO-92
1
2N7002/NDS7002A
S
D
G
SOT-23
(TO-236AB)
S
D
G
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
VDSS Drain-to-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40
ID Maximum Drain Current - Continuous 200 115 280 mA
Maximum Drain Current - Pulsed 500 800 1500
PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW
3.2 1.6 2.4 mW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10 Seconds 300 °C
Symbol Parameter Value Unit
2N7000 2N7002 NDS7002A
RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Off Characteristic s
BVDSS
Drain-Source Breakdown
Voltage VGS = 0 V, ID = 10 AAll 60 V
IDSS Zero Gate Voltage Drain
Current
VDS = 48 V, VGS = 0 V 2N7000 1 A
VDS = 48 V, VGS = 0 V,
TC = 125°C
1mA
VDS = 60 V, VGS = 0 V 2N7002
NDS7002A
1A
VDS = 60 V, VGS = 0 V,
TC = 125°C
0.5 mA
IGSSF Gate - Body Leakage,
Forward
VGS = 15 V, VDS = 0 V 2N7000 10 nA
VGS = 20 V, VDS = 0 V 2N7002
NDS7002A 100 nA
IGSSR Gate - Body Leakage,
Reverse
VGS = -15 V, VDS = 0 V 2N7000 -10 nA
VGS = -20 V, VDS = 0 V 2N7002
NDS7002A -100 nA
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
VDS = VGS, ID = 250 A2N7002
NDS7002A 12.12.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V,
ID = 500 mA
2N7000 1.2 5
VGS = 10 V,
ID = 500 mA, TC = 125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V,
ID = 500 mA
2N7002 1.2 7.5
VGS = 10 V,
ID = 500 mA, TC = 100°C 1.7 13.5
VGS = 5 V,
ID = 50 mA 1.7 7.5
VGS = 5 V,
ID = 50 mA, TC = 100°C 2.4 13.5
VGS = 10 V,
ID = 500 mA
NDS7002A 1.2 2
VGS = 10 V,
ID = 500 mA, TC = 125°C 23.5
VGS = 5 V,
ID = 50 mA 1.7 3
VGS = 5 V,
ID = 50 mA, TC = 125°C 2.8 5
VDS(ON) Drain-Source On-Voltage VGS = 10 V,
ID = 500 mA
2N7000 0.6 2.5 V
VGS = 4.5 V,
ID = 75 mA 0.14 0.4
VGS = 10 V,
ID = 500 mA
2N7002 0.6 3.75
VGS = 5.0 V,
ID = 50 mA 0.09 1.5
VGS = 10 V,
ID = 500 mA
NDS7002A 0.6 1
VGS = 5.0 V,
ID = 50 mA 0.09 0.15
ID(ON) On-State Drain Current VGS = 4.5 V,
VDS = 10 V
2N7000 75 600 mA
VGS = 10 V,
VDS 2 VDS(on)
2N7002 500 2700
VGS = 10 V,
VDS 2 VDS(on)
NDS7002A 500 2700
gFS Forward
Transconductance
VDS= 10 V,
ID = 200 mA
2N7000 100 320 mS
VDS 2VDS(ON),
ID = 200 mA
2N7002 80 320
VDS 2VDS(ON),
ID = 200 mA
NDS7002A 80 320
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Note:
1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
All 20 50 pF
Coss Output Capacitance All 11 25
Crss Reverse Transfer
Capacitance All 4 5
ton Turn-On Time VDD = 15 V, RL = 25 ,
ID = 500 mA,
VGS= 10 V, RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
toff Turn-Off Time VDD = 15 V, RL = 25 ,
ID = 500 mA, VGS= 10 V,
RGEN = 25
2N7000
10
ns
VDD = 30 V, RL = 150 ,
ID = 200 mA, VGS= 10 V,
RGEN = 25
2N7002
NDS7002A 20
Drain-Source Diode Characterist ics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward
Current
2N7002 115 mA
NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward
Current
2N7002 0.8 A
NDS7002A 1.5
VSD Drain-Source Diode
Forward Voltage
VGS = 0 V,
IS = 115 mA(1)
2N7002 0.88 1.5 V
VGS = 0 V,
IS = 400 mA(1)
NDS7002A 0.88 1.2
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
2N7000 / 2N7002 / NDS7002A
01 45
0
0.5
1
1.5
2
V
23
, DRAIN-SOURCE VOLTAGE (V
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
= 10VVGS
VDS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
J
VGS
= 10V
D
I = 500mA
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERAT URE (°C)
th
V , N250$/,=(D
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D
I = 1 mA
DS
V = VGS
0 0 .4 0 .8 1 .2 1 .6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
GS
V =4.0V
D
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
J
T = 125°C
25°C
-55°C
D
V V V
GS
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
02 810
0
0.4
0.8
1.2
1.6
2
46
, GATE TO SOURCE VOLTAGE (VVV
VV = 109
DS
GS
J
T = -55°C 25°C
125°C
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
2N7000 / 2N7002 / NDS7002A
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEM PERATURE (°C)
BV'66 NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
D
I = 250µA
0.2 0.41.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V
0.6 0 .8 1 1.2
, BODY DIODE FORWA RD VOLTAGE (V)
S
I , REVERSE DRAIN CURRENT (A)
VV GS
 9
J
T = 125°C
VSD
25°C
-55°C
00.4 1 .6 2
0
2
4
6
8
10
0.81.2
g
Q , *ATE CHARGE (nC)
V , GA E-SOURCE VOLTAGE (V)VGS
D
I =500mA
DS
V = 25V
115mA
280mA
123 3050
1
2
5
10
20
40
60
51020
VVDS , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Ciss
f = 1 MHz
GS
V = 0V
CC oss
Crss
G
D
S
VDD
RL
V
V
IN
OUT
VGS
DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms
0..
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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
0.0001 0.10.001 0.01 1 10 100 300
0.001
0.002
0.01
0.05
0.1
0.2
0.5
1
1
t , TIME (sec)
r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
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0.01
0.02
0.05
0.1
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0.5
1
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r(t), NORMALIZED EFFECTIVETRANSIENT
THERMAL RESISTANCE
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Safe Operating Area
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