INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
05/28/03
www.irf.com 1
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
E
G
n-channel
C
VCES = 600V
IC = 7.6A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.1V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
D2Pak
IRGS4B60KD1 TO-262
IRGSL4B60KD1
TO-220
IRGB4B60KD1
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector- to-Em itter Voltag e 6 0 0 V
IC @ TC = 25° C Co ntin uous Colle c t o r Cu rr en t 11
IC @ TC = 100°C Co ntin uous Colle cto r Cu rr en t 7. 6 A
ICM Pul s e Collec to r Current (Ref.F ig .C. T.5) 22
ILM Cla m ped Indu ctive Load cur rent
c
22
IF @ TC = 25°C Dio de Contin uous For ward Cu rrent 11
IF @ TC = 100°C Diode Continuous Forward Current 6.7
IFM Di ode Max im um Fo r war d Cu rr en t 22
VGE Gate -to-Em i tt er Volt age ±20 V
PD @ TC = 25°C Maximum Power Dissipation 63 W
PD @ TC = 100°C Maximum Power D issi pation 31
TJOperating Junction and -55 to +175
TSTG S t o r ag e Te m perature Rang e ° C
Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case- IGBT ––– ––– 2.4 °C/ W
RθJC Ju nct i o n- to-C a s e- D io de ––– ––– 6. 1
RθCS Ca s e- to-Sin k, flat, greas e d s ur fac e ––– 0. 50 –––
RθJA Junction-to-Ambient ––– –– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)
d
––– –– 40
Wt Weight –– 1.44 ––– g
PD - 94607A
IRGB/S/SL4B60KD1
2www.irf.com
Note to are on page 16
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V , IC = 50 A
V(BR)CES/TJTemperature Coeff. of Breakdown Volta
ge
—0.28—V/°C
VGE = 0V, IC = 1m A (2 C- 15 C)
—2.12.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Colle c to r-to -Emitt er Voltage 2.5 2.8 V IC = 4.0A , VGE = 15 V, TJ = 150°C 9,10,11
—2.62.9 IC = 4.0A, VGE = 15V, TJ = 175°C
VGE(th) Gat e Th r es h old Vo l t age 3. 5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
VGE(th)/TJThr es h old Volt age te m p. co effi cie nt -8. 1 mV
C
VCE = VGE, IC = 1mA (25°C-150°C) 12
gfe For ward Tr ansconductan ce 1.7 S VCE = 50 V, IC = 4.0A , PW = 80µ s
—1.0150 VGE = 0V, V CE = 600V
ICES Zero Gate Voltag e Collecto r Current 136 600 µA VGE = 0V, VCE = 600V , TJ = 15 C
722 2400 VGE = 0V, VCE = 600V , TJ = 17 C
VFM Dio de Forw a r d V o ltag e D r op 1.4 2. 0 V IF = 4.0A 8
—1.31.8 IF = 4.0A, TJ = 15 C
—1.21.7 IF = 4.0A, TJ = 17 C
IGES G at e- to-Em itte r Leakage Cur rent ±100 nA VGE = ±20V
Switching Characteri stics @ TJ = 25°C (unless otherwise specified )
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
QgTot a l G ate Cha r ge (turn - on ) 12 IC = 4.0A 23
Qge Gate-to-Emitter Charge (t urn-on) 1.7 nC VCC = 400V CT1
Qgc Gate-to-C o l l ect or Charge (tur n-on ) 6 .5 VGE = 15 V
Eon Tur n-On Switching Loss 73 80 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switch ing Loss 47 53 µJ VGE = 15 V, RG = 100, L = 2.5mH
Etot To t a l S witc hin g Lo ss 120 130 TJ = 25°C
e
td(on) Turn-On delay time 22 28 IC = 4.0A , VCC = 400V
trRise time 18 23 ns VGE = 15 V, RG = 100, L = 2.5mH CT4
td(off) Turn-Off delay time 100 110 TJ = 25°C
tfFall time 66 80
Eon Tur n-On Switching Loss 130 150 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switch ing Loss 83 140 µJ VGE = 15V, RG = 100, L = 2.5mH 13,15
Etot To t a l S witc hin g Lo ss 220 280 TJ = 150°C
e
WF1,WF2
td(on) Turn-On delay time 22 27 IC = 4.0A , VCC = 400V 14,16
trRise time 18 22 ns VGE = 15 V, RG = 100, L = 2.5mH CT4
td(off) Turn-Off delay time 120 130 TJ = 150°C WF1
tfFall time 79 89 WF2
Cies Inpu t Capacitanc e 190 VGE = 0V
Coes Out put Capacitance 25 pF VCC = 30V 22
Cres Reverse Transfer Capacitance 6.2 f = 1.0MHz
RB S O A Rev e r s e Bias Safe Op erating Ar ea FULL SQ UA RE TJ = 15 C, IC = 22A, Vp = 600V 4
VCC=500V,VGE = +1 5V to 0V,R G = 100 CT2
SCSOA S hort Circuit Safe Operating Area 10 µs TJ = 150°C, Vp = 600V, R G = 100 CT3
VCC=360V,VGE = +1 5V to 0V WF4
Erec R ev ers e R ec ov ery En er g y of the Diode 81 100 µJ TJ = 15 C 17,18,19
trr Di ode Reve rse Recovery Time 93 ns VCC = 400V, IF = 4. 0A, L = 2.5mH 20,21
Irr Peak Reverse Recovery Current 6.3 7.9 A VGE = 15 V, RG = 10 0 CT4,WF3
IRGB/S/SL4B60KD1
www.irf.com 3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
10
20
30
40
50
60
70
Ptot (W)
0 1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
IC (A)
10ms
DC
1ms
100µs
10 100 1000
VCE (V)
0
1
10
100
IC A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
2
4
6
8
10
12
IC (A)
IRGB/S/SL4B60KD1
4www.irf.com
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
0246810 12
VCE (V)
0
5
10
15
20
25
30
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810 12
VCE (V)
0
5
10
15
20
25
30
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810 12
VCE (V)
0
5
10
15
20
25
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
5
10
15
20
25
30
35
IF (A)
-40°C
25°C
150°C
IRGB/S/SL4B60KD1
www.irf.com 5
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2. 0A
ICE = 4.0A
ICE = 8.0A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2. 0A
ICE = 4.0A
ICE = 8.0A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 2. 0A
ICE = 4.0A
ICE = 8.0A
0 5 10 15 20
VGS, G ate-to- Source Voltage (V )
0
5
10
15
20
25
30
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
IRGB/S/SL4B60KD1
6www.irf.com
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V,
RG= 100; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 4.0A; VGE= 15V
12345678910
IC (A)
0
50
100
150
200
250
300
350
Energy (µJ)
EOFF
EON
0100 200 300 400 500
RG ()
0
50
100
150
200
250
300
350
Energy (µJ)
EON
EOFF
0246810
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0100 200 300 400 500
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
IRGB/S/SL4B60KD1
www.irf.com 7
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 4.0A
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
IF = 4.0A; TJ = 150°C
012345678910
IF (A)
1
2
3
4
5
6
7
8
9
10
IRR (A)
RG = 100Ω
RG = 200
RG = 330
RG = 470
0100 200 300 400 500
RG (Ω)
2
3
4
5
6
7
IRR (A)
100 150 200 250 300
diF /dt (A/µs)
2
3
4
5
6
7
IRR (A)
0 50 100 150 200 250 300 350 400
diF /dt (A/µs)
100
200
300
400
500
600
700
QRR (µC)
100Ω
200Ω
470
330Ω
4.0A
8.0A
2.0A
IRGB/S/SL4B60KD1
8www.irf.com
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
Fig. 22- Typ. Capacitance vs. V CE
VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE
ICE = 4.0A; L = 3150µH
012345678910
IF (A)
0
25
50
75
100
125
150
Energy (µJ)
200Ω
100Ω
330Ω
470
02468101214
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
300V
400V
020 40 60 80 100
VCE (V)
1
10
100
1000
Capacitance (pF)
Cies
Coes
Cres
IRGB/S/SL4B60KD1
www.irf.com 9
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pul s e Durati on (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0429 0.000001
1.3417 0.000178
1.0154 0.000627
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pul s e Durati on (sec)
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.0904 0.000003
1.6662 0.000117
3.5994 0.001610
0.7454 0.048846
IRGB/S/SL4B60KD1
10 www.irf.com
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
1K
VCC
DUT
0
L
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
L
Rg
80 V DUT
480V
+
-
DC
Driver
DUT
360V
IRGB/S/SL4B60KD1
www.irf.com 11
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4 Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
-100
0
100
200
300
400
500
600
700
0.4 0.6 0.8 1 1.2
Ti me (uS)
Vce (V)
-2
0
2
4
6
8
10
12
14
Ice (A)
tf
Eoff Loss
90% Ice
5% Vce
5% Ice
Vce
Ice
-100
0
100
200
300
400
500
600
700
0.35 0.45 0.55 0.65
Ti me (uS)
Vce (V)
-2
0
2
4
6
8
10
12
14
Ice (A)
Eon
Loss
tr
90% I ce
10% Ice
5% Vce
Vce
Ice
-600
-500
-400
-300
-200
-100
0
100
0.05 0.15 0.25 0.35
Time (uS)
Vf (V)
-8
-6
-4
-2
0
2
4
6
If (A)
QRR
tRR
Peak
IRR
10% Peak
IRR
-50
0
50
100
150
200
250
300
350
400
30 40 50 60 70
Time (uS)
-5
0
5
10
15
20
25
30
35
40
I (A)
Vce
Ice
ICE (A)
VCE (V)
IRGB/S/SL4B60KD1
12 www.irf.com
TO-220AB Package Outline
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASS EMBLY LINE "C"
T HIS IS AN IRF 1010
LOT CODE 1789
AS SE MB LE D ON WW 19, 1997 PART NUMBER
AS S E MB L Y
LOT CODE
DAT E CODE
YEAR 7 = 1997
LINE C
WE E K 1 9
LOGO
RECT IFIER
INT E RNATIONAL
LEAD ASS IGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2. 92 ( . 115)
2. 64 ( . 104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4. 06 ( . 160)
3. 55 ( . 140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCI NG PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLI NE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSI NK & LEAD MEASUREMENTS DO N OT INCLUDE BURRS.
LEAD ASSIGNMENTS
1 - GATE
2 -COLLECTOR
3 EMITTER
4 - COLLECTOR
Dimensions are shown in millimeters (inches)
IRGB/S/SL4B60KD1
www.irf.com 13
D2Pak Package Outline
D2Pak Part Marking Information
F 530S
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLE D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
AS S E MB L Y
LOT CODE
INT ER NAT IONAL
RECTIFIER
LOGO
PART NUMB ER
DAT E CODE
YE AR 0 = 2000
WE E K 02
LINE L
IRGB/S/SL4B60KD1
14 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
EXA
M
PLE:THIS IS A
N IRL3103L
LOT C
O
DE 1789
A
SSEM
BLY
PA
RT NUMBER
DA
TE C
ODE
W
EEK 19
LINE C
LO
T C
ODE
YEA
R 7 = 1997
A
SSEM
BLED O
N WW
19, 1997
IN THE A
SSEM
BLY LINE "C
"LOG
O
REC
TIFIER
INTERNA
TIONA
L
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRGB/S/SL4B60KD1
www.irf.com 15
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-220AB package is not recommended for Surface Mount Application.
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer
to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16. 10 (.634)
15. 90 (.626)
1.75 (. 069)
1.25 (. 049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (. 0145)
0.342 (. 0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2 .36 2)
MI N.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COM FORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.