IRGB/S/SL4B60KD1
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Note to are on page 16
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V , IC = 50 0µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Volta
—0.28—V/°C
VGE = 0V, IC = 1m A (2 5°C- 15 0°C)
—2.12.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7
VCE(on) Colle c to r-to -Emitt er Voltage — 2.5 2.8 V IC = 4.0A , VGE = 15 V, TJ = 150°C 9,10,11
—2.62.9 IC = 4.0A, VGE = 15V, TJ = 175°C
VGE(th) Gat e Th r es h old Vo l t age 3. 5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11
∆VGE(th)/∆TJThr es h old Volt age te m p. co effi cie nt — -8. 1 — mV/°
VCE = VGE, IC = 1mA (25°C-150°C) 12
gfe For ward Tr ansconductan ce — 1.7 — S VCE = 50 V, IC = 4.0A , PW = 80µ s
—1.0150 VGE = 0V, V CE = 600V
ICES Zero Gate Voltag e Collecto r Current — 136 600 µA VGE = 0V, VCE = 600V , TJ = 15 0°C
— 722 2400 VGE = 0V, VCE = 600V , TJ = 17 5°C
VFM Dio de Forw a r d V o ltag e D r op — 1.4 2. 0 V IF = 4.0A 8
—1.31.8 IF = 4.0A, TJ = 15 0°C
—1.21.7 IF = 4.0A, TJ = 17 5°C
IGES G at e- to-Em itte r Leakage Cur rent — — ±100 nA VGE = ±20V
Switching Characteri stics @ TJ = 25°C (unless otherwise specified )
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
QgTot a l G ate Cha r ge (turn - on ) — 12 — IC = 4.0A 23
Qge Gate-to-Emitter Charge (t urn-on) — 1.7 — nC VCC = 400V CT1
Qgc Gate-to-C o l l ect or Charge (tur n-on ) — 6 .5 — VGE = 15 V
Eon Tur n-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switch ing Loss — 47 53 µJ VGE = 15 V, RG = 100Ω, L = 2.5mH
Etot To t a l S witc hin g Lo ss — 120 130 TJ = 25°C
e
td(on) Turn-On delay time — 22 28 IC = 4.0A , VCC = 400V
trRise time — 18 23 ns VGE = 15 V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 100 110 TJ = 25°C
tfFall time — 66 80
Eon Tur n-On Switching Loss — 130 150 IC = 4.0A, VCC = 400V CT4
Eoff Turn-Off Switch ing Loss — 83 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15
Etot To t a l S witc hin g Lo ss — 220 280 TJ = 150°C
e
WF1,WF2
td(on) Turn-On delay time — 22 27 IC = 4.0A , VCC = 400V 14,16
trRise time — 18 22 ns VGE = 15 V, RG = 100Ω, L = 2.5mH CT4
td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1
tfFall time — 79 89 WF2
Cies Inpu t Capacitanc e — 190 — VGE = 0V
Coes Out put Capacitance — 25 — pF VCC = 30V 22
Cres Reverse Transfer Capacitance — 6.2 — f = 1.0MHz
RB S O A Rev e r s e Bias Safe Op erating Ar ea FULL SQ UA RE TJ = 15 0°C, IC = 22A, Vp = 600V 4
VCC=500V,VGE = +1 5V to 0V,R G = 100Ω CT2
SCSOA S hort Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, R G = 100Ω CT3
VCC=360V,VGE = +1 5V to 0V WF4
Erec R ev ers e R ec ov ery En er g y of the Diode — 81 100 µJ TJ = 15 0°C 17,18,19
trr Di ode Reve rse Recovery Time — 93 — ns VCC = 400V, IF = 4. 0A, L = 2.5mH 20,21
Irr Peak Reverse Recovery Current — 6.3 7.9 A VGE = 15 V, RG = 10 0 ΩCT4,WF3