Darlington Transistors BC618 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 55 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 CASE 29-04, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W BASE 2 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) V(BR)CEO 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 80 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 12 -- -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) ICES -- -- 50 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO -- -- 50 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- -- 50 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 February, 2001 - Rev. 1 1 Publication Order Number: BC618/D BC618 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VCE(sat) -- -- 1.1 Vdc Base-Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) VBE(sat) -- -- 1.6 Vdc DC Current Gain (IC = 100 A, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) hFE 2000 4000 10000 4000 -- -- -- -- -- -- 50000 -- fT 150 -- -- MHz Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Cob -- 4.5 7.0 pF Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) Cib -- 5.0 9.0 pF Characteristic ON CHARACTERISTICS -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC618 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 BC618 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 ( ), RESISTANCE (NORMALIZED) BC618 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0k 700 500 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC618 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER http://onsemi.com 6 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC618 Notes http://onsemi.com 7 BC618 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 BC618/D