Features
•
Current-controlled Output Current Source with 5 Input Channels
•
2 Selectable Outputs for Grounded Laser Diodes
•
Output Current per Channel up to 200 mA
•
Total Output Current up to 250 mA
•
Rise Time 1.0 ns/Fall Time 1.1 ns
•
On-chip RF Oscillator
•
Control of 2 Different Frequencies and Swings by Use of 4 External Resistors
•
Oscillator Frequency Range from 200 MHz to 600 MHz
•
Oscillator Swing to 100 mA
•
Single 5-V Power Supply
•
Common Enable/Disable Input
•
TTL/CMOS Control Signals
•
Small SSO24 Package and QFN28 Package
Applications
•
Combo Drives (DVD + CD-RW)
•
DVD-RAM with CD-RW Capability
•
DVD-RW with CD-RW Capability
1. Description
The T0800 is a laser diode driver for the operation of two different, grounded laser
diodes for DVD-RAM (650 nm) and CD-RW (780 nm). It includes five channels for five
different optical power levels which are controlled by a separate IC. The read channel
generates a continuous output level. The channels 2 to 5 are provided as write chan-
nels with very fast switching speeds. When a low signal is applied to the NE pins, write
current pulses are enabled. All channels are summed together and switched to one of
the two outputs IOUTA or IOUTB by the select input SELA. Each channel can contrib-
ute up to 200 mA to the total output current of up to 250 mA. A total gain of 100 is
provided between each reference current input and the selected output. Although the
reference inputs are current inputs, voltage control is possible by using external resis-
tors. An on-chip RF oscillator reduces laser mode hopping noise during read mode.
Frequency and swing can be set independently for the two selectable outputs with two
pairs of resistors. Oscillation is enabled by a high signal at the ENOSC pin. Complete
output current and oscillator switch-off is achieved by a low signal at the ENABLE
input.
5-channel Laser
Driver with RF
Oscillator and
2 Outputs
T0800
Rev. 4503E–DVD–11/05
2
4503E–DVD–11/05
T0800
2. Pin Configuration
Figure 2-1. Pinning SSO24
IR
I2
I3
I4
I5
RFA
RFB
NE2
NE3
NE4
NE5
ENABLE
VCC1
VCC2
IOUTA
IOUTA
GND
RSA
RSB
IOUTB
IOUTB
SELA
ENOSC
VCC2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Table 2-1. Pin Description: SSO24
Pin Symbol Type Function
1 IR Analog Input current, bias voltage approximately GND
2 I2 Analog Input current, bias voltage approximately GND
3 I3 Analog Input current, bias voltage approximately GND
4 I4 Analog Input current, bias voltage approximately GND
5 I5 Analog Input current, bias voltage approximately GND
6 RFA Analog External resistor to GND sets frequency of oscillator A
7 RFB Analog External resistor to GND sets frequency of oscillator B
8 NE2 Digital Digital control of channel 2 (low active)
9 NE3 Digital Digital control of channel 3 (low active)
10 NE4 Digital Digital control of channel 4 (low active)
11 NE5 Digital Digital control of channel 5 (low active)
12 ENABLE Digital Enables output current (high active)
13 VCC2 Supply +5V power supply for IOUT
14 ENOSC Digital Enables RF oscillator (high active)
15 SELA Digital High: selects IOUTA, RFA, RSA
Low: selects IOUTB, RFB, RSB
16/17 IOUTB Analog Output current source B for laser diode
18 RSB Analog External resistor to GND sets swing of oscillator B
19 RSA Analog External resistor to GND sets swing of oscillator A
20 GND Supply Ground
21/22 IOUTA Analog Output current source A for laser diode
23 VCC2 Supply +5V power supply for IOUT
24 VCC1 Supply +5V power supply for circuit
3
4503E–DVD–11/05
T0800
Figure 2-2. Pinning
QFN28
I4
I5
RFA
RFB
GND
NE2
NE3
IOUTA
IOUTA
GND
RSA
RSB
IOUTB
IOUTB
I3
I2
IR
NC
VCC1
VCC2
VCC2
NE4
NE5
ENABLE
VCC2
VCC2
ENOSC
SELA
28 27 26 25 24 23 22
8 9 10 11 12 13 14
1
2
3
4
5
6
7
21
20
19
18
17
16
15
Table 2-2. Pin Description: QFN28
Pin Symbol Type Function
1 I4 Analog Input current, bias voltage approximately GND
2 I5 Analog Input current, bias voltage approximately GND
3 RFA Analog External resistor to GND sets frequency of oscillator A
4 RFB Analog External resistor to GND sets frequency of oscillator B
5 GND Supply Ground
6 NE2 Digital Digital control of channel 2 (low active)
7 NE3 Digital Digital control of channel 3 (low active)
8 NE4 Digital Digital control of channel 4 (low active)
9 NE5 Digital Digital control of channel 5 (low active)
10 ENABLE Digital Enables output current (high active)
11, 12 VCC2 Supply +5V power supply IOUT
13 ENOSC Digital Enables RF oscillator (high active)
14 SELA Digital High: selects IOUTA, RFA, RSA
Low: selects IOUTB, RFB, RSB
15 IOUTB Analog Output current source B for laser diode
16 IOUTB Analog Output current source B for laser diode
17 RSB Analog External resistor to GND sets swing of oscillator B
18 RSA Analog External resistor to GND sets swing of oscillator A
19 GND Supply Ground
20 IOUTA Analog Output current source A for laser diode
21 IOUTA Analog Output current source A for laser diode
22, 23 VCC2 Supply +5V power supply IOUT
24 VCC1 Supply +5V power supply circuit
25 NC – Not connected
26 IR Analog Input current, bias voltage approximately GND
27 I2 Analog Input current, bias voltage approximately GND
28 I3 Analog Input current, bias voltage approximately GND
Paddle – – Should be connected with ground
4
4503E–DVD–11/05
T0800
Figure 2-3. Block Diagram
Channel 3
Channel 2
I3
NE3
I2
NE2
Read channel
RF oscillator
IR
ENOSC
ENABLE
RFA RSA
Channel 4
Channel 5
I4
NE4
NE5
I5
IOUTA
IOUTB
RFB RSB SELA
5
4503E–DVD–11/05
T0800
3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter Symbol Value Unit
Supply voltage V
CC
–0.5 to +6.0 V
Input voltage at IR, I2, I3, I4, I5 V
IN1
–0.5 to +0.5 V
Input voltage at NE2, NE3, NE4, NE5, ENOSC V
IN2
–0.5 to V
CC
+0.5 V
Output voltage V
OUT
–0.5 to V
CC
–1 V
Power dissipation P
tot
0.7
(1)
to 1
(2)
W
Junction temperature T
J
150 °C
Storage temperature range T
stg
–65 to +125 °C
Notes: 1. R
thJA
≤
115 K/W, T
amb
= 70°C
2. R
thJA
≤
115 K/W, T
amb
= 25°C
4. Thermal Resistance
Parameter Symbol Value(1) Unit
Junction ambient R
thJA
115 (SSO24)
35 (QFN28)
K/W
K/W
Note: 1. Measured with multi-layer test board (JEDEC standard JESD51-7)
5. Recommended Operating Conditions
Parameter Symbol Value Unit
Supply voltage range V
CC
4.5 to 5.5 V
Input current I
IR
, I
I2
, I
I3
, I
I4
, I
I5
< 2.5 mA
External resistor to GND to set oscillator
frequency RFA, RFB > 3
kΩ
External resistor to GND to set oscillator swing RSA, RSB > 100
Ω
Operating temperature range T
amb
0 to +70 °C
6
4503E–DVD–11/05
T0800
6. Electrical Characteristics
V
CC
= 5V, T
amb
= 25°C, ENABLE = High, NE2 = NE3 = NE4 = NE5 = High, ENOSC = Low, unless otherwise specified
No. Parameters Test Conditions Pin(1) Symbol Min. Typ. Max. Unit Type*
1 Power Supply
1.1 Supply current, power
down
ENABLE = Low,
NE2 = NE3 = NE4 =
NE5 = Low
11,12, 22,
23, 24 ICC
PD2
0.5 mA A
1.2
Supply current, read
mode, oscillator
disabled
I
IR
= I
I2
= I
I3
= I
I4
= I
I5
=
500 µA
11,12, 22,
23, 24 ICC
R1
115 mA A
1.3
Supply current, read
mode, oscillator
enabled, output A
selected
I
IR
= I
I2
= I
I3
= I
I4
= I
I5
=
500 µA,
ENOSC = High,
RS = 560
Ω
,
RF = 7.5 k
Ω
,
SELA = High
11,12, 22,
23, 24 ICC
R2
120 mA A
1.4 Supply current, write
mode
I
IR
= I
I2
= I
I3
= I
I4
= I
I5
=
500 µA,
NE2 = NE3 = NE4 =
NE5 = Low
11,12, 22,
23, 24 ICC
W
320 mA A
1.5 Supply current, input
off
I
IR
= I
I2
= I
I3
= I
I4
= I
I5
=
0 µA
11,12, 22,
23, 24 ICC
off
18 mA A
2 Digital Inputs
2.1 NE2/NE3/NE4/NE5
low voltage 6, 7, 8, 9 VNE
LO
1.1 V A
2.2 NE2/NE3/NE4/NE5
high voltage 6, 7, 8, 9 VNE
HI
2.0 V A
2.3 SELA low voltage 14 VSELA
LO
0.5 V A
2.4 SELA high voltage 14 VSELA
HI
2.0 V A
2.5 ENABLE low voltage 10 VEN
LO
0.5 V A
2.6 ENABLE high voltage 10 VEN
HI
2.0 V A
2.7 ENOSC low voltage 13 VEO
LO
0.5 V A
2.8 ENOSC high voltage 13 VEO
HI
2.0 V A
3 Currents at Digital Inputs
3.1 NE2/NE3/NE4/NE5
low current NE = 0V 6, 7, 8, 9 INE
LO
–300 µA A
3.2 NE2/NE3/NE4/NE5
high current NE = 5V 6, 7, 8, 9 INE
HI
800 µA A
3.3 SELA low current SELA = 0V 14 ISELA
LO
–45 µA A
3.4 SELA high current SELA = 5V 14 ISELA
HI
150 µA A
3.5 ENABLE low current ENABLE = 0V 10 IEN
LO
–150 µA A
3.6 ENABLE high current ENABLE = 5V 10 IEN
HI
100 µA A
3.7 ENOSC low current ENOSC = 0V 13 IEO
LO
–100 µA A
3.8 ENOSC high current ENOSC = 5V 13 IEO
HI
800 µA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note: 1. Related to QFN28 Package
7
4503E–DVD–11/05
T0800
7. Electrical Characteristics: Laser Amplifier
V
CC
= 5 V, T
amb
= 25°C, ENABLE = High, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
4 Outputs IOUTA and IOUTB
4.1 Best fit current gain Any channel
(1)
15, 16,
20, 21 GAIN 90 100 130 mA/mA A
4.2 Best fit current offset Any channel
(1)
15, 16,
20, 21 IOS –8 +4 mA A
4.3 Output current
linearity Any channel
(1)
15, 16,
20, 21 ILIN –3 +3 % A
4.5 Output current per
channel Output is sourcing 15, 16,
20, 21 I
OUTR
200 mA A
4.6 Total output current 15, 16,
20, 21 I
OUT
250 mA A
4.7 I
IN
input impedance R
IN
is to GND 1, 2, 26,
27, 28 R
IN
170 220 270
Ω
A
4.8 NE threshold Temperature
stabilized
6, 7, 8,
9VTH 1.68 V C
4.9 Output off current 1 ENABLE = Low 15, 16,
20, 21 IOFF
1
1mAA
4.10 Output off current 2 NE2 = NE3 = NE4 =
NE5 = High
15, 16,
20, 21 IOFF
2
1mAA
4.11 Output off current 3
NE2 = NE3 = NE4 =
NE5 = Low,
I
IR
= I
I2
= I
I3
= I
I4
= I
I5
=
0 µA
15, 16,
20, 21 IOFF
3
5mAA
4.12 I
OUT
supply sensitivity,
read mode
I
OUT
= 40 mA,
V
CC
= 5V ±10%,
read-only
15, 16,
20, 21 VSE
R
–5 1 %V A
4.13 I
OUT
supply sensitivity,
write mode
I
OUT
= 80 mA, 40 mA
read + 40 mA write,
V
CC
= 5V ±10%
15, 16,
20, 21 VSE
W
–6 0 %V A
4.14 I
OUT
current output
noise
I
OUT
= 40 mA,
ENOSC = Low
15, 16,
20, 21 INO
O
3nA/
rt-Hz C
4.15 I
OUT
temperature
sensitivity, read mode
I
OUT
= 40 mA, read
only
15, 16,
20, 21 TSE
R
–100 ppm/°C C
4.16 I
OUT
temperature
sensitivity, write mode
I
OUT
= 80 mA, 40 mA
read + 40 mA write
15, 16,
20, 21 TSE
W
–300 ppm/°C C
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note: 1. Linearity of the amplifier is calculated using a best fit method at three operating points of I
OUT
at 20 mA, 40 mA, and
60 mA, I
OUT
= (I
IN
×
GAIN) + I
OS
8
4503E–DVD–11/05
T0800
8. Electrical Characteristics
V
CC
= 5V, I
OUT
= 40 mA DC with 40-mA pulse, T
amb
= 25°C, unless otherwise specified
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
5 Outputs IOUTA and IOUTB, AC Performance
5.1 Write rise time I
OUT
= 40 mA (read)
+40 mA (10%-90%)
(1)
15, 16,
20, 21 t
RISE
1.0 3.0 ns C
5.2 Write fall time I
OUT
= 40 mA (read)
+40 mA (10%-90%)
(1)
15, 16,
20, 21 t
FALL
1.1 3.0 ns C
5.3 Output current
overshoot
I
OUT
= 40 mA (read) +
40 mA
(1)
15, 16,
20, 21 OS 5 % C
5.4 I
OUT
ON prop delay NE 50% High-Low to
I
OUT
at 50% of final value
15, 16,
20, 21 t
ON
2.0 ns C
5.5 I
OFF
OFF prop
delay
NE 50% Low-High to
I
OUT
at 50% of final value
15, 16,
20, 21 t
OFF
2.0 ns C
5.6 Disable time
ENABLE 50% High-Low
to I
OUT
at 50% of final
value
15, 16,
20, 21 t
DIS
20 ns C
5.7 Enable time
ENABLE 50% Low-High
to I
OUT
at 50% of final
value
15, 16,
20, 21 t
EN
20 ns C
5.8 Disable time
oscillator
ENOSC 50% Low-High
to I
OUT
at 50% of final
value
15, 16,
20, 21 T
DISO
4nsC
5.9 Enable time
oscillator
ENOSC 50% High-Low
to I
OUT
at 50% of final
value
15, 16,
20, 21 T
ENO
2nsC
5.10 SELA delay SELA Low-High 50% to
I
OUT
at 50% of final value
15, 16,
20, 21 T
SAH
TBD ns C
5.11 SELA delay SELA High-Low 50% to
I
OUT
at 50% of final value
15, 16,
20, 21 T
SAL
TBD ns C
5.12 Amplifier
bandwidth
I
OUT
= 50 mA, all
channels, –3 dB value
15, 16,
20, 21 BW
LCA
20 MHz C
6 Oscillator
6.1 Oscillator
frequency RF = 4.7 k
Ω
15, 16,
20, 21 F
OSC
380 470 560 MHz A
6.2
Oscillator
temperature
coefficient
RF = 4.7 k
Ω
15, 16,
20, 21 TC
OSC
–150 ppm/°C C
6.3 Disable time
oscillator
ENOSC 50% High-Low
to I
OUT
, at 10%/90% of
final value
15, 16,
20, 21 T
DISO
4nsC
6.4 Enable time
oscillator
ENOSC 50% Low-High
to I
OUT
, at 10%/90% of
final value
15, 16,
20, 21 T
ENO
2nsC
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
9
4503E–DVD–11/05
T0800
9. Application Information Oscillator
Figure 9-1. Frequency versus Resistor RFA and RFB (RS = 525Ω)
Figure 9-2. Swing versus Resistor RSA and RSB (RF = 7.82 k
Ω
)
Figure 9-3. Frequency Dependency of Swing
200
250
300
350
400
450
500
550
4.0 5.0 6.0 7.0 8.0 9.0 10.0
RFA, RFB (kΩ)
Frequency (MHz)
0
20
40
60
80
100
120
0.0 200.0 400.0 600.0 800.0 1000.0 1200.0
RSA, RSB (Ω)
Swing (mA pk/pk)
0
10
20
30
40
50
60
200.0 250.0 300.0 350.0 400.0 450.0 500.0
Frequency (MHz)
Swing (mA pk/pk)
10
4503E–DVD–11/05
T0800
Figure 9-4. Transfer Characteristic of all Channels (Gain = 111)
Figure 9-5. Output Characteristic (Voltage Compliance) R(IOUT) = 5.8Ω
Figure 9-6. Output Pulse, Read: 50 mA, Write: 250 mA pk-pk
0
50
100
150
200
250
300
350
0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0
IR/I2/I3/I4/I5 (mA)
IOUT (mA)
0
50
100
150
200
250
300
350
0.0 1.0 2.0 3.0 4.0 5.0
VCC - V(IOUT)/V
IOUT (mA)
11
4503E–DVD–11/05
T0800
Figure 9-7. Timing Diagram of IOUT
Figure 9-8. Application Circuit
ENABLE
NE2
IOUT
tr
tr tf
tf
t
EN
tr
tr
tf
tf
NE3
NE4
NE5
t
ON
t
ON
t
ON
t
ON
t
OFF
t
OFF
t
OFF
t
OFF
t
DIS
VCC
LD
LD
A
n
a
l
o
g
D
i
g
i
t
a
l
IR
I2
I3
I4
I5
RFA
RFB
NE2
NE3
NE4
NE5
ENABLE
VCC1
VCC2
IOUTA
IOUTA
GND
RSA
RSB
IOUTB
IOUTB
SELA
ENOSC
VCC2
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
12
4503E–DVD–11/05
T0800
11. Package Information
10. Ordering Information
Extended Type Number Package Remarks
T0800-TNQW SSO24 Taped and reeled, Pb-free
T0800-PJQW QFN28 Taped and reeled, Pb-free
technical drawings
according to DIN
specifications
Package SSO24
Dimensions in mm
8.05
7.80
0.15
0.05
0.25
0.65 7.15
1.30
5.7
5.3
4.5
4.3
6.6
6.3
0.15
24 13
112
13
4503E–DVD–11/05
T0800
Printed on recycled paper.
4503E–DVD–11/05
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