PESD5V0F1BSF,315 - NXP Semiconductors

1. Product profile

1.1 General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in

a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package

designed to protect one signal line from the damage caused by ESD and other transients.

1.2 Features and benefits

Bidirectional ESD protection of one line

Extremely low diode capacitance Cd=0.25pF

Minimized capacitance variation over voltage

ESD protection up to 10 kV according to IEC 61000-4-2

Ultra small SMD package

1.3 Applications

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

1.4 Quick reference data

2. Pinning information

PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

Rev. 1 — 10 December 2012 Product data sheet

Table 1. Quick reference data

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage - - 5 V

Cddiode capacitance f = 1 MHz; VR= 0 V 0.20 0.25 0.30 pF

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

Transparent

top view

sym045

Product data sheet Rev. 1 — 10 December 2012 2 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

3. Ordering information

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5.

[1] Device stressed with ten non-repetitive ESD pulses.

Table 3. Ordering information

Type number Package

Name Description Version

PESD5V0F1BSF DSN0603-2 leadless ultra small package; 2 terminals;

body 0.6 0.3 0.3 mm SOD962

Table 4. Marking codes

Type number Marking code

PESD5V0F1BSF F

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPPM rated peak pulse power tp=8/20s[1] -28W

IPPM rated peak pulse current tp=8/20s[1] -2.2A

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

VESD electrostatic

discharge voltage IEC 61000-4-2 (contact discharge) [1] -10kV

IEC 61000-4-2 (air discharge) [1] -10kV

MIL-STD-883 (human body model) - 10 kV

Table 7. ESD standards compliance

Standard Conditions

IEC 61000-4-2, level 4 (ESD) > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Product data sheet Rev. 1 — 10 December 2012 3 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

6. Characteristics

[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANS/IESD STM5.1-2008.

Fig 1. 8/20 s pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage --5V

IRM reverse leakage

current VRWM = 5 V - 1 100 nA

VCL clamping voltage IPP =0.5A [1] --10V

IPPM =2.2A [1] - - 12.8 V

VBR breakdown voltage IR=1mA 6 - 10 V

Cddiode capacitance f = 1 MHz; VR= 0 V 0.20 0.25 0.30 pF

rdyn dynamic resistance IR=10A [2] -1.3-

Product data sheet Rev. 1 — 10 December 2012 4 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

f=1MHz; T

amb =25C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values Fig 4. V-I characteristics for a bidirectio nal

ESD pr otection diode

tp= 100 ns; Transmission Line Pulse (TLP)

Fig 5. Dynamic resistance; typical values

VR (V)

0.0 5.04.02.0 3.01.0

018aaa061

0.4

0.6

0.2

0.8

1.0

(pF)

0.0

006aab325

-VCL -VBR -VRWM VCL

VBR

VRWM

-IRM

IRM

-IR

-IPP

IPP

IPPM

-IPPM

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Product data sheet Rev. 1 — 10 December 2012 5 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

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Product data sheet Rev. 1 — 10 December 2012 6 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

7. Application information

The PESD5V0F1BSF is designed for the protection of one data or signal line from surge

pulses and ESD damage. The device is suitable on lines where the signal polarities are

both, positive and negative with respect to ground. It provides protection against surges

with up to 28 W per line.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

Fig 7. Application di ag ram

aaa-002737

ESD protection diode

GND

line to be protected

Product data sheet Rev. 1 — 10 December 2012 7 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

Fig 8. Package outline DSN0603-2 (SOD962)

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Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

9000

PESD5V0F1BSF DSN0603-2

(SOD962) 2 mm pitch, 8 mm tape and reel -315

Product data sheet Rev. 1 — 10 December 2012 8 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

10. Soldering

Fig 9. Reflow sold erin g footprint DSN0603-2 (SOD962)

Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962

sod962_fr

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

R0.025 (8×)

0.12

(2×)

0.2

(2×)

0.22

(2×)

0.4

0.85

0.4

Product data sheet Rev. 1 — 10 December 2012 9 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0F1BSF v.1 20121210 Product data sheet - -

Product data sheet Rev. 1 — 10 December 2012 10 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

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data sheet shall define the specification of the product as agreed between

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Limited warr a nty and liability — Information in this document is believed to

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Applications — Applications that are described herein for any of these

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Customers are responsible for the design and ope ration of their applications

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the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 10 December 2012 11 of 12

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

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the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without NXP Semicond uctors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting fr om customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specif ications.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD5V0F1BSF

Extremely low capacitance bidirectional ESD protection diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 December 2012

Documen t identifie r: PESD5V0F1BSF

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information . . . . . . . . . . . . . . . . . . . . . 7

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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