BCV61A,215 - NXP - Pdf.Support

1. Product profile

1.1 General description

NPN general-purp ose double transistors in a small SOT143B Surface-Mounted

Device (SMD) plastic package.

1.2 Features

Low current (max . 1 00 mA)

Low voltage (max. 30 V)

Matched pairs

1.3 Applications

Applications with working point independent of temperature

Current mirrors

2. Pinning information

BCV61

NPN general-purpose double transistors

Rev. 04 — 18 December 2009 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEITA

BCV61 SOT143B - BCV62

BCV61A BCV62A

BCV61B BCV62B

BCV61C BCV62C

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 collector TR2;

base TR1 and TR2

2 collector TR1

3emitterTR1

4emitterTR2 21

006aaa84

TR2 TR1

Product data sheet Rev. 04 — 18 December 2009 2 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB).

Table 3. Ordering information

Type number Package

Name Description Version

BCV61 - plastic surface-mounted package; 4 leads SOT143B

BCV61A

BCV61B

BCV61C

Table 4. Marking codes

Type number Marking code[1]

BCV61 1M*

BCV61A 1J*

BCV61B 1K*

BCV61C 1L*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VCBO collector-base voltage open emitter - 30 V

VCEO collector-emitter voltage open base - 30 V

VEBS emitter-b a s e vo ltage VCE =0V - 6 V

ICcollector current - 100 mA

ICM peak collector current - 200 mA

IBM peak base current - 200 mA

Per device

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 04 — 18 December 2009 3 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

6. Thermal characteristics

[1] Device mounted on an FR4 PCB.

7. Characteristics

Table 6. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction

to ambient in free air [1] - - 500 K/W

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Transistor TR1

ICBO collector-base cut-off current VCB =30V;

IE=0A --15nA

VCB =30V;

IE=0A;

Tj= 150 °C

--5μA

IEBO emitter-base cut-off current VEB =5V;

IC=0A - - 100 nA

hFE DC current gain VCE =5V;

IC= 100 μA100 - -

VCE =5V;

IC=2mA 110 - 800

VCEsat collector-emitter saturation

voltage IC=10mA;

IB=0.5mA - 90 250 mV

IC= 100 mA;

IB=5mA - 200 600 mV

VBEsat base-emitter saturation voltage IC=10mA;

IB=0.5mA [1] - 700 - mV

IC= 100 mA;

IB=5mA [1] - 900 - mV

VBE base-emitter voltage IC=2mA;

VCE =5V [2] 580 660 700 mV

IC=10mA;

VCE =5V [2] - - 770 mV

fTtransition frequency VCE =5V;

IC=10mA;

f = 100 MHz

100 - - MHz

Cccollector capacitance VCB =10V;

IE=i

e=0A;

f=1MHz

-2.5-pF

NF noise figure VCE =5V;

IC= 200 μA;

RS=2kΩ;

f=1kHz;

B=200Hz

--10dB

Product data sheet Rev. 04 — 18 December 2009 4 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2] VBE decreases by about 2 mV/K with increasing temperature.

[3] Device, without emitter resistors, mounted on an FR4 PCB.

Transistor TR2

VEBS emitter-base voltage VCB =0V;

IE=−250 mA --−1.8 V

VCB =0V;

IE=−10 μA−400--mV

hFE DC current gain VCE =5V;

IC=2mA

BCV61 110 - 800

BCV61A 110 - 220

BCV61B 200 - 450

BCV61C 420 - 800

Transistors TR1 and TR2

IC1/IE2 current matching IE2 =−0.5 mA;

VCE1 =5V

Tamb ≤25 °C 0.7 - 1.3

Tamb ≤150 °C 0.7 - 1.3

IE2 emitter current 2 VCE1 =5V [3] --−5mA

Table 7. Characteristics …continued

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 04 — 18 December 2009 5 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 1. BCV61A: DC current gain as a function of

collector current; typical values Fig 2. BCV61A: Base-emitter volt age as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 3. BCV61A: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 4. BCV61A: Base-emitter saturation voltage as a

function of collector current; typical values

mgt723

−1

11010

(mA)

400

300

200

100

(1)

(2)

(3)

mgt724

−1

11010

(mA)

1200

1000

800

600

400

200

(mV)

(1)

(2)

(3)

mgt725

−1

11010

(mA)

CEsat

(mV)

(1)

(2)

(3)

mgt726

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 04 — 18 December 2009 6 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 5. BCV61B: DC current gain as a function of

collector current; typical values Fig 6. BCV61B: Base-emitter volt age as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 7. BCV61B: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 8. BCV61B: Base-emitter saturation voltage as a

function of collector current; typical values

mgt727

−1

11010

(mA)

600

500

400

300

200

100

(1)

(2)

(3)

1200

1000

800

600

400

200

mgt728

−2

−1

11010

(mA)

(mV)

(1)

(2)

(3)

104

103

102

mgt729

−1

11010

(mA)

CEsat

(mV)

(1)

(2)

(3)

mgt730

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 04 — 18 December 2009 7 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 9. BCV61C: DC current gain as a function of

collector current; typical values Fig 10. BCV61C: Base-emitter volt age as a function of

collector current; typical values

IC/IB=20

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 11. BCV61C: Collector-emitter saturation voltage

as a function of collector current; typical

values

Fig 12. BCV61C: Base-emitter saturation voltage as a

function of collector current; typical values

mgt731

−1

11010

(mA)

1200

1000

800

600

400

200

(1)

(2)

(3)

1200

1000

800

600

400

200

mgt732

−2

−1

11010

(mA)

(mV)

(1)

(2)

(3)

mgt733

−1

11010

(mA)

CEsat

(mV)

(1)

(2)(3)

mgt734

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 04 — 18 December 2009 8 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

8. Test information

IC1/IE2 =1.3

Fig 13. Maximum collector-emitter voltage as a function of emitter resist ance

mbk082

10−11

VCE1max

(V)

10 RE (Ω)102

IE2 =

1 mA

5 mA

10 mA

50 mA

Fig 14. Test circuit current matching

Fig 15. BCV61 with emitter resistors

006aaa83

VCE1

IC1

TR2TR1 IE2 =

constant

006aab9

VCE1

IC1

TR2TR1 IE2 =

constan

RERE

Product data sheet Rev. 04 — 18 December 2009 9 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 16. Package outline SOT143B

04-11-16Dimensions in mm

3.0

2.8 1.1

0.9

2.5

2.1

1.4

1.2

1.7

1.9

0.48

0.38

0.15

0.09

0.45

0.15

0.88

0.78

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

BCV61 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235

BCV61A

BCV61B

BCV61C

Product data sheet Rev. 04 — 18 December 2009 10 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

11. Soldering

Fig 17. Reflow soldering footprint SOT143B

Fig 18. Wave soldering footprint SOT143B

solder lands

solder resist

occupied area

solder paste

sot143b_

0.9

0.60.7

3.25

0.6

(3×)

0.6

(3×)

0.5

(3×)

0.7

(3×)

1.9

0.75 0.95

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot143b_

4.6

4.45

1.2

(3×)

1.425

(3×)

1.425

1.2

2.2

2.575

Dimensions in mm

Product data sheet Rev. 04 — 18 December 2009 11 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BCV61_4 20091218 Product data sheet - BCV61_3

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Section 3 “Ordering information”: added

•Section 4 “Marking”: updated

•Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added

•Section 8 “Test information ”: added

•Figure 16: superseded by mini mized package outline drawing

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

BCV61_3 19990408 Product specification - BCV61_CNV_2

BCV61_CNV_2 19970616 Product specification - -

Product data sheet Rev. 04 — 18 December 2009 12 of 13

NXP Semiconductors BCV61

NPN general-purpose double transistors

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

13.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warr anty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objecti ve specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BCV61

NPN general-purpose double transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 December 2009

Document identifier: BCV61_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13