LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 1 of 6
2N3439 thru 2N3440
Available on
commercial
versions
NPN LOW POWER SIL ICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, J AN TX,
JANTXV and JAN S
DESCRIPTION
Th is family of high-frequency, epit axial planar transis tor s feature low saturati on voltage.
These devices are al so available in TO-39 an d low profi le U4 and UA packaging. Microsemi
als o of fers numerous other transi stor pr oducts to meet hi gher and lower power ratings with
various switching speed requirem ents in both through-hole and sur fac e-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long leaded)
2N3439L – 2N3440L
U4 package
(surface mount)
2N3439U4 – 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
Important: For the la test information, visi t our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3439 through 2N3440 series.
• JAN, JANTX, JA NTXV, and JANS qualifications are available per MIL-PRF-19500/368.
• RoHS compliant versions available (commercial grade only).
• VCE(sat) = 0.5 V @ IC = 50 mA.
• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.
• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.
APPLI CAT IONS / BENEF ITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3439 2N3440 Unit
Collector-Em itter Volta g e VCEO 350 250 V
Collector-Base Vol tage
V
CBO
450
300
V
Emitter-Base Voltage VEBO 7.0 V
Collector Current IC 1.0 A
Total Power Dissipation
@ T A = +25°C
(1)
@ T C = +25°C (2) PD 0.8
5.0 W
Operating & Storage Junction Temperature Range
T
J
, T
stg
-65 to +200
°C
Notes: 1. Derate linearly @ 4.57mW/°C for TA > + 25°C.
2. Derate linearly @ 28.5mW/°C for TC > + 25°C
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 2 of 6
2N3439 thru 2N3440
M ECHANI CAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Tin/lead solder dip or RoHS compliant pure tin (commercial grade only) plate over gold.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: NPN (see package outl ine).
• WEIGHT: A pproximately 1.064 grams .
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3439 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance (available
on commercial grade only)
e3 = RoHS compliant with pure
tin plate
e4 = RoHS compliant with gold
plate
Blank = non-RoHS compliant
SYMBOLS & DEFI NITIONS
Symbol
Definition
Cobo
Common-bas e open-c irc uit output c apacitance.
ICEO
Collect or cutoff curr ent, bas e open.
ICEX
Collect or cutoff curr ent, c i r cuit between base and emi tter.
IEBO
Emitter cut off c ur r ent, c ollec tor open.
hFE
Common-emi tter st ati c forward current transfer ratio.
VCEO
Collector-emitter v olt age, base open.
VCBO
Collector-emitter v olt age, emitter open.
VEBO
Emitter-base vo l tage, c ollec tor open.
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 3 of 6
2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Paramete r s / Test Condi tions
Symbol
Min.
Max.
Unit
Collector-Emi tter Breakdown Vol tage
V(BR)CEO
350
250
V
I
C
= 10 mA
RBB1 = 470 Ω; VBB1 = 6 V
L = 25 mH (min) ; f = 30 – 60 Hz 2N3439
2N3440
Collector-Emi tter C utoff Curr ent
ICEO
2.0
2.0 µA
V
CE
= 300 V
VCE = 200 V 2N3439
2N3440
Emitter-Base Cutoff Curr ent
VEB = 7.0 V
IEBO 10 µA
Collector-Emi tter C utoff Curr ent
ICEX
5.0
5.0
µA
V
CE
= 450 V, V
BE
= -1.5 V
VCE = 300 V, VBE = -1.5 V
2N3439
2N3440
Collector-Bas e C utoff Curr ent
ICBO
2.0
2.0
5.0
5.0
µA
V
CB
= 360 V
VCB = 250 V
VCB = 450 V
VCB = 300 V
2N3439
2N3440
2N3439
2N3440
ON CHARACTERISTI CS (1)
Parameters / T est Conditions Symbol Min. Max. Unit
Forward-Cur rent Transfer Rati o
IC = 20 mA, VCE = 10 V
IC = 2.0 m A, VCE = 10 V
IC = 0.2 m A, VCE = 10 V hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 4.0 mA VCE(sat) 0.5 V
Base-Emi tter Saturation Vol tage
IC = 50 mA, IB = 4.0 mA VBE(sat) 1.3 V
DYNAMIC CHARACTERISTI CS
Paramete r s / Test Condi tions
Symbol
Min.
Max.
Unit
Magnitude of Common Emi tter Small-Signa l Short-
Circuit Forward Cu rrent Transfer Ratio
IC = 10 mA, VCE = 10 V, f = 5 .0 MHz |hfe| 3.0 15
Forward C ur r ent Trans fer Ratio
IC = 5.0 mA, VCE = 10 V, f = 1.0 kHz hfe 25
O utput Capacitance
VCB = 10 V, IE = 0, 10 0 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF
I nput C apacitanc e
VCB = 5.0 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
(1) Pulse Test: Pul se Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 4 of 6
2N3439 thru 2N3440
ELECTRICAL CHARACTERISTICS (TA = + 25°C, unless otherwise not ed) continued
SWITCHING CHARACTERISTICS
Paramete r s / Test Condi tions Symbol Min. Max. Unit
Turn-On Ti me
VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton
1.0 µs
Turn-O ff Ti m e
VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff
10 µs
SAFE OPERATING AREA (See graph below and al so reference test method 3053 of
MIL-STD-750.)
DC Te sts
TC = +2 5 °C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 V, IC = 1.0 A
B oth Types
Test 2
VCE = 350 V, IC = 14 mA
2N3439
Test 3
VCE = 250 V, IC = 20 mA
2N3440
VCE – Col lector to Emitter Vol tage ( V)
Max i mum Safe Operating gr aph ( continuous dc )
I
C
– Collector Current (mA)
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 5 of 6
2N3439 thru 2N3440
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-Power Derating Curve
NOTES: Thermal Resistance Junction to Case = 30.0 oC/W
Ma x F inish-Alloy Temp = 175.0 oC
.110-5 .110-4 .110-3 .110-2 .110-1 0.1 1 10 100
TIME (s)
FIGURE 2
Maximum Ther mal Impedance
NOTE: TC = +25 °C, PT = 5.0 W, thermal resistance Rθ JC = 30 °C /W, stee l.
DC Operation Maximum Rating (W)
THETA (oC/W)
LDS-0022, Rev. 4 (111683) ©2011 Microsemi Corporation Page 6 of 6
2N3439 thru 2N3440
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maxi mum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating pl ane shall be within .007 inch (0.18 mm)
radius of true posi tion (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter i s uncontrolled in
and beyond LL minimum.
9. All three lead s.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For transistor types 2N3439 and 2N3440 (TO-39) , dimension LL = .5 inch (12.70 mm) min. a nd .750 inch (19.05 mm) max .
Dimensions
Symbol
Inches
Millimeters
Note
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
6
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
7
LD
.016
.019
0.41
0.48
8,9
LL
See note 14
LU
.016
.019
0.41
0.48
8,9
L1 .050 1.27 8,9
L2 .250 6.35 8,9
P
.100
2.54
7
Q
.030
0.76
5
TL
.029
.045
0.74
1.14
3,4
TW
.028
.034
0.71
0.86
3
r
.010
0.25
10
α
45° TP
45° TP
7
