© 2007 IXYS CORPORATION, All rights reserved
DS99821 (04/07)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VGSM Transient ± 30 V
ID25 TC= 25°C 102 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 250 A
IAS TC= 25°C 5 A
EAS TC= 25°C 1.2 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS 7 V/ns
TJ≤ 175°C, RG = 2.5 Ω
PDTC= 25°C 750 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
FCMounting force (PLUS220) 11..65 / 2.5..14.6 N/lb.
Weight TO-247 6 g
TO-3P 5.5 g
PLUS220 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 200 V
VGS(th) VDS = VGS, ID = 1 mA 2.5 4.5 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5μA
VGS = 0 V TJ = 150°C 250 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 18 23 mΩ
TrenchHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH102N20T
IXTQ102N20T
IXTV102N20T
VDSS = 200 V
ID25 = 102 A
RDS(on) ≤≤
≤≤
≤23 mΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
GDS
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Preliminary Technical Information
Features
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
z175 °C Operating Temperature
Advantages
zEasy to mount
zSpace savings
zHigh power density
GS
D
PLUS220 (IXTV)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH102N20T IXTQ102N20T IXTV102N20T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, Note 1 55 92 S
Ciss 6800 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 722 pF
Crss 126 pF
td(on) Resistive Switching Times 19 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 ns
td(off) RG = 2.5 Ω (External) 50 ns
tf25 ns
Qg(on) 114 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 34 nC
Qgd 31 nC
RthJC 0.20 °C/W
RthCS 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 102 A
ISM Pulse width limited by TJM 330 A
VSD IF = 50 A, VGS = 0 V, Note 1 1.2 V
trr IF = 50 A, -di/dt = 100 A/μs 130 ns
VR = 50 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PLUS220 (IXTV) Outline
© 2007 IXYS CORPORATION, All rights reserved
IXTH102N20T IXTQ102N20T IXTV102N20T
Fig. 1. Output Characteristics
@ 2 5º C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
VDS - Volts
ID - Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 2 5º C
0
20
40
60
80
100
120
140
160
180
200
220
240
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
10
20
30
40
50
60
70
80
90
100
110
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VDS - Volts
ID - Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normal ized to I
D
= 51 A Value
vs. Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 102A
I
D
= 51A
Fig. 5. R
DS(on)
Normaliz ed to I
D
= 51A Value
vs . Dra in Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 20 40 60 80 100 120 140 160 180 200
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
TC - De grees Centigrade
ID - Amperes
Ex ternal Lead Cu r rent Lim it
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH102N20T IXTQ102N20T IXTV102N20T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.43.84.24.6 5 5.45.86.26.6
V
GS
- Volts
I
D
- A m peres
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40º C
25º C
150ºC
Fig. 9. Forward Voltage Drop of
Intr insic D iode
0
50
100
150
200
250
300
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 100V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacita nce - PicoF arad s
f
= 1 MHz Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Wi dth - Seconds
Z
(th)JC
- ºC / W
© 2007 IXYS CORPORATION, All rights reserved
IXTH102N20T IXTQ102N20T IXTV102N20T
Fig. 14. Resistive Turn-on
Rise T ime vs. Drain Curren t
21
22
23
24
25
26
27
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
r
- Na noseconds
RG
= 2.5Ω
VGS = 15V
VDS = 100V
TJ = 125º C
TJ = 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
22
24
26
28
30
32
34
2345678910
R
G
- Ohms
t
r
- N anoseconds
19
20
21
22
23
24
25
26
t d ( o n )
- Nanoseconds
t r t
d(on)
- - - -
T
J
= 125ºC, VGS = 15V
VDS = 100V
I D = 102A, 51A
Fig. 16 . Resistive Turn-off
Switching Time s vs. Junc tion Temperature
18
19
20
21
22
23
24
25
26
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degr ees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
75
t
d ( o f f )
- Nanoseconds
t
f
t
d(off) - - - -
RG = 2.5Ω, VGS = 15V
VDS = 100V
I D = 51A
I D = 102A
Fig. 17. Resistive Turn-off
Switching Times vs . Drain Current
18
19
20
21
22
23
24
25
26
27
28
50 55 60 65 70 75 80 85 90 95 100 105
I
D
- Amperes
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
67
70
t d ( o f f )
- Na noseconds
t
f
t
d(off)
- - - -
RG = 2.5Ω, V
GS
= 15V
V
DS
= 100V
T
J
= 125ºC
TJ = 25ºC
T
J
= 125ºC
TJ = 25ºC
Fig. 13. Resistiv e Turn-on
Rise Time vs. Junction Temperature
21
22
23
24
25
26
27
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Cen tigrade
t
r
- Nanoseconds
RG
= 2.5Ω
VGS = 15V
VDS = 100V
I D = 102A
I D = 51A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
15
20
25
30
35
40
45
50
55
60
65
70
75
2345678910
R
G
- Ohms
t
f - Nanoseconds
40
50
60
70
80
90
100
110
120
130
140
150
160
t d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
TJ = 125ºC, V
GS
= 15V
V
DS
= 100V
I D = 51A, 102A
IXYS REF: T_102N20T (7W) 4-13-07-A.xls
