CS19-12ho1
2 1
3
Single Thyristor
High Efficiency Thyristor
Part number
CS19-12ho1
Backside: anode
TAV
T
V V1.31
RRM
20
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS19-12ho1
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.32
R0.7 K/W
min.
20
VV
50T = 25°C
VJ
T = °C
VJ
mA1V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
110
P
tot
170 WT = 25°C
C
20
1200
forward voltage drop
total power dissipation
Conditions
1.65
T = 25°C
VJ
125
V
T0
V0.86T = °C
VJ
125
r
T
22 mΩ
V1.31T = °C
VJ
I = A
T
V
20
1.73
I = A40
I = A40
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA31
P
GM
Wt = 30 µs 5
max. gate power dissipation
P
T = °C
C
125
Wt = 2.5
P
P
GAV
W0.5
average gate power dissipation
C
J
9
junction capacitance
V = V230 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
180
195
120
115
A
A
A
A
155
165
160
160
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 150 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 150°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
60 A
T
P
G
= 0.15
di /dt A/µs;
G
=0.15
DRM
cr
V = ⅔ V
DRM
GK
500
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
28 mA
T = °C-40
VJ
2.5 V
50 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
3 mA
V = ⅔ V
D DRM
150
latching current
T = °C
VJ
75 mA
I
L
25t µs
p
= 10
I A;
G
= 0.1 di /dt A/µs
G
= 0.1
holding current
T = °C
VJ
50 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.1 di /dt A/µs
G
= 0.1
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 20 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 20 A
T
100
R
thCH
0.5
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS19-12ho1
Ratings
XXXXXX
yywwZ
Logo
Part Number
Date Code
Lot #
123456
Product Marking
Location
CS19-08ho1 TO-220AB (3) 800
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C125
virtual junction temperature
-40
Weight g2
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
100-40
CS19-08ho1S TO-263AB (D2Pak) (2) 800
TO-220
Similar Part Package Voltage class
CS19-12ho1S TO-263AB (D2Pak) (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CS19-12ho1 473138Tube 50CS19-12ho1Standard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.86
mΩ
V
0 max
R
0 max
slope resistance *
19
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
125
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS19-12ho1
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
= supplier option
1 2 3
4
2 1
3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS19-12ho1
0,01 0,1 1
60
80
100
120
140
1
6
0
0,5 1,0 1,5 2,0 2,5
0
20
40
60
10
0
10
1
10
2
10
3
10
4
0,0
0,2
0,4
0,6
0,8
I
TSM
[A]
I
T
[
A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
10
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150 175
0
10
20
30
40
Fig. 1 Forward characteristics Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 10 20
0
10
20
30
40
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000
0,1
1
10
100
I
G
[mA]
V
G
[
V]
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
I
GD
, T
VJ
= 125°C
4: P
GAV
= 0.5 W
5: P
GM
= 2.5 W
6: P
GM
= 5 W
R
thi
[K/W] t
i
[s]
0.10 0.01
0.08 0.0011
0.18 0.025
0.17 0.32
0.17 0.09
6
5
4
3
2
1
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
CS19-12ho1
IXYS reserves the right to change limits, conditions and dimensions. 20191129dData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved