MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC pro ducts.
Features:
• Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications
• Excellent RF Performance:
o 45 dBm IP3
o 70 dBc ACPR
o 28.5 dBm P1dB
o 14 dB SSG @ 2000 MHz
o 1.3 dB NF @ 2000 MHz
• MTTF > 100 years @ channel temperature 150ºC
• Lead Free RoHS Compliant Surface-Mount QFN3 X3 Package
Description:
The MwT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity
driver, PA (Power Amplifier), and high dynamic range LNA applications. The applic ations include 2G, 2.5G, and 3G wireless
infrastructure standards, such as GSM, TDMA, CDMA, Edge, CDMA2000, W CDMA, T D-SCDMA, and UMTS base stations. This
product is also idea for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16
WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point micro wave
communications links. The third order intercept performance of the MwT-17Q3 is excellent, typically 18 dB above the 1 dB power
gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced using MwT's proprietary high
linearity device design. It also uses MwT reliable metallization process. All chips are passivated using MwT's patented "Diamond-
Like Carbon" process for increase d durability.
Electrical Specifications: Vds=7.0V, Ids=500mA, Ta=25
°
C, Zo=50 ohm
Target for Driver and PA a ppl ications (Vds=6.5V, Ids=200mA, Ta=25 °C)
Parameter Units Typical Data
Test Frequency MHz 900 1950 2500 3500
Gain dB 18 14 11 10
Input Return Loss dB 10 10 10 9
Output Return Loss dB 10 8 9 9
Output P1dB dBm 28.5 28.5 28.5 28.5
Output IP3 dBm 45 45 45 45
Noise Figure dB 3 3 4 4
Target for High Dynamic Range and Low Noise Applications (Vds=5V, Ids=200mA, Ta=25 °C)
Parameter Units Typical Data
Test Frequency MHz 900 1950 2500 3500
Gain dB 18 16 13 10
Output IP3 dBm 43 43 44 44
Noise Figure (1) dB 0.8 1.3 1.5 2.2
1. Noise Figure is taken at Ids=100mA.
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC pro ducts.
DC Specifications: (Ta = 25ºC)
SYMBOL PARAMETERS & CONDITIONS UNITS MIN TYP MAX
IDSS Saturated Drain Current
Vds=3.0 V Vgs=0.0 V mA 440 680
Gm
T
ransconductance
Vds=2.0 V Vgs=0.0 V mS 380
Vp Pinch-off Voltage
Vds=3.0 V Ids=16.0 mA V -2.5 -5.0
BVGSO Gate-to-Source Breakdown Voltage
Igs= -2.4 mA V -6.0 -12.0
BVGDO Gate-to-Drain Breakdown Voltage
Igd= -2.4 mA V -9.0 -12.0
Rth Thermal Resistance °C/W 30
MwT-17Q3 Noise Parameters
(Ids=100mA, Vds= 5V)
Freq. Fmin Γo
MHz dB
Mag. Ang R/50
910 0.8 0.18 75 0.14
2000 1.2 0.3 138 0.13
2500 1.3 0.25 164 0.12
3000 1.5 0.27 175 0.12
3500 1.7 0.29 180 0.11
MwT-17Q3 dB(S21) & MSG
0.0
10.0
20.0
30.0
40.0
0123456
Freq (GHz)
Gain (dB)
dB(S21)
MSG
QFN Outline Diagram
MwT-17Q3
DC –4 GHz Packaged FET
Data Sheet
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2006
Please visit MwT website www.mwtinc.com for information on other MwT MMIC pro ducts.
Typical Scattering Parameters:
(Vds=6.5V, Ids=200mA, Ta =25°C Reference Planes at Leads)
F [GHz] S11 S21 S12 S22
Mag Ang Mag Ang Mag Ang Mag Ang
0.250 0.883 -62.592 13.372 145.807 0.030 54.281 0.199 -61.148
0.500 0.822 -101.770 9.977 124.388 0.042 42.491 0.205 -99.716
0.750 0.788 -125.905 7.610 111.294 0.049 36.904 0.207 -120.156
1.000 0.772 -141.758 6.104 102.405 0.051 35.628 0.207 -132.755
1.250 0.765 -153.729 5.130 95.579 0.056 35.655 0.205 -141.214
1.500 0.762 -163.638 4.378 88.965 0.056 35.370 0.201 -149.045
1.750 0.762 -172.772 3.909 84.423 0.060 38.592 0.198 -156.773
2.000 0.760 178.628 3.503 77.228 0.063 35.009 0.196 -165.448
2.250 0.761 170.294 3.103 72.602 0.063 38.580 0.201 -175.051
2.500 0.765 162.141 2.867 67.380 0.067 37.582 0.210 174.935
2.750 0.768 154.540 2.561 61.985 0.067 38.516 0.224 165.112
3.000 0.772 147.101 2.384 57.569 0.068 38.547 0.238 156.386
3.250 0.779 140.309 2.140 51.937 0.069 41.708 0.257 148.369
3.500 0.781 133.919 1.966 49.164 0.072 41.931 0.276 141.018
3.750 0.781 128.561 1.859 45.298 0.072 42.125 0.295 134.092
4.000 0.782 123.650 1.687 40.539 0.075 45.268 0.313 128.716
4.250 0.788 119.391 1.576 38.185 0.072 45.630 0.332 125.490
4.500 0.792 114.854 1.477 35.447 0.080 51.701 0.358 122.346
4.750 0.796 110.082 1.413 30.992 0.086 49.126 0.378 118.908
5.000 0.795 105.529 1.291 28.392 0.088 51.114 0.394 114.941
5.250 0.792 100.361 1.271 24.881 0.096 49.424 0.403 110.320
5.500 0.796 95.934 1.170 19.496 0.096 45.481 0.410 104.083
5.750 0.799 90.277 1.125 18.186 0.105 48.822 0.426 98.804
6.000 0.804 84.180 1.088 13.075 0.112 46.367 0.446 91.560
Absolute Maximum Ratings: (Ta= 25 °C)*
SYMBOL PARAMETERS UNITS ABSOLUTE MAXIMUM
Vds Drain-Source Voltage V 8
Vgs Gate-Source Voltage V -6 to +0.8
Ids Drain Current mA 400
Igs Gate Current mA 3
Pdiss DC Power Dissipation W 2.5
Pin max RF Input Power dBm +28
Tch Channel Temperature ºC 150
Tstg Storage Temperature ºC -60 to 150
*Operation of this device above any one of these parameters may cause permanent damage.
