IRF6215PbF
HEXFET® Power MOSFET
PD - 94817
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -9.0 A
IDM Pulsed Drain Current -44
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy310 mJ
IAR Avalanche Current-6.6 A
EAR Repetitive Avalanche Energy11 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = -150V
RDS(on) = 0.29Ω
ID = -13A
T
O
-22
0
AB
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
11/5/03
S
D
G
Lead-Free
IRF6215PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -6.6A, VGS = 0V
trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -6.6A
Qrr Reverse RecoveryCharge ––– 1.2 1.7 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
A
S
D
G
-13
-44
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
nH
LSInternal Source Inductance ––– 7.5 –––
LDInternal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.29 VGS = -10V, ID = -6.6A , TJ = 25°C
––– ––– 0.58 ΩVGS = -10V, ID = -6.6A , TJ = 150°C
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.6 ––– ––– S VDS = -50V, ID = -6.6A
––– ––– -25 µA VDS = -150V, VGS = 0V
––– ––– -250 VDS = -120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
QgTotal Gate Charge ––– ––– 66 ID = -6.6A
Qgs Gate-to-Source Charge ––– ––– 8.1 nC VDS = -120V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 35 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -75V
trRise Time ––– 36 ––– ns ID = -6.6A
td(off) Turn-Off Delay Time ––– 53 ––– RG = 6.8Ω
tfFall Time ––– 37 ––– RD = 12Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 860 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
S
D
G
IRF6215PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
1
10
100
1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
110100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
T = 175°C
J
V = -50V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -11A
D
JJ
IRF6215PbF
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 20406080
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -6.6A V = -120V
V = -75V
V = -30V
DDS
DS
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
10µs
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
0
400
800
1200
1600
2000
1 10 100
C, Capacitance (pF)
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
IRF6215PbF
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF6215PbF
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
0
200
400
600
800
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -2.7A
-4.7A
BOTTOM -6.6A
D
IRF6215PbF
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF6215PbF
LEAD ASSIGNMENTS
1 - GATE
2 - DRA IN
3 - SOURC E
4 - DRA IN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 O UTLINE CONFORMS TO JEDE C OUTLINE TO-220AB.
2 CON TROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997 PART NUMBER
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
LINE C
WEEK 19
LOGO
RECTIFIER
IN TERN ATIO N AL
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/