DATA SH EET
Product data sheet
Supersedes data of 1996 Apr 26
1999 May 11
DISCRETE SEMICONDUCTORS
BZV85 series
Voltage regulator diodes
db
ook, halfpage
M3D130
1999 May 11 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV85 series
FEATURES
•Total power dissipation:
max. 1.3 W
•Tolerance series: approx. ±5%
•Working voltage range:
nom. 3.6 to 75 V (E24 range)
•Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
•Stabilization purpose s .
DESCRIPTION
Medium-power volta ge regulator diodes in hermetically sea l ed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx. ±5% tolera nce range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
The diodes are type branded.
handbook, halfpage
MAM241
ka
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g System (IEC 1 34).
Notes
1. Device mounted o n a printed circuit-board with 1 cm2 copper area per lead.
2. If the leads are kept at Ttp = 55 °C at 4 mm from body.
ELECTRICAL CHARACTERISTIC S
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current −500 mA
IZSM non-repetitive peak reverse current tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.3 see Table
“Per type”
tp = 10 ms; half sinewave;
Tj = 25 °C prior to surge see Table
“Per type”
Ptot total power dissipation Tamb = 25 °C; lead length 10 mm;
note 1 −1 W
note 2 −1.3 W
PZSM non-repetitive peak re verse power
dissipation tp = 100 μs; square wave;
Tj = 25 °C prior to surge −60 W
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 50 mA; see Fig.4 1 V
1999 May 11 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV85 series
Per type
Tj = 25 °C unless otherwise specified.
BZV85-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 5 and 6
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
IR (μA) VR
(V)
at tp = 100 μs;
Tamb = 25 °Cat tp = 10 ms;
Tamb = 25 °C
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
3V6 3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2 000
3V9 3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1 950
4V3 4.0 4.6 13 −2.7 050 450 51.0 8.0 1 850
4V7 4.4 5.0 13 −2.0 +0.7 45 300 31.0 8.0 1 800
5V1 4.8 5.4 10 −0.5 +2.2 45 300 32.0 8.0 1 750
5V6 5.2 6.0 7 0 2.7 45 300 22.0 8.0 1 700
6V2 5.8 6.6 40.6 3.6 35 200 23.0 7.0 1 620
6V8 6.4 7.2 3.5 1.3 4.3 35 200 24.0 7.0 1 550
7V5 7.0 7.9 32.5 5.5 35 150 14.5 5.0 1 500
8V2 7.7 8.7 53.1 6.1 25 150 0.7 5.0 5.0 1 400
9V1 8.5 9.6 53.8 7.2 25 150 0.7 6.5 4.0 1 340
10 9.4 10.6 84.7 8.5 25 90 0.2 7.0 4.0 1 200
11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1 100
12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1 000
13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900
15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760
16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700
18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600
20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540
22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500
24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450
27 25.1 28.9 40 20.1 27.5 850 0.05 19 1.2 400
30 28.0 32.0 45 22.4 32.0 850 0.05 21 1.2 380
1999 May 11 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV85 series
33 31.0 35.0 45 24.8 35.0 845 0.05 23 1.0 350
36 34.0 38.0 50 27.2 39.9 845 0.05 25 0.9 320
39 37.0 41.0 60 29.6 43.0 645 0.05 27 0.8 296
43 40.0 46.0 75 34.0 48.3 640 0.05 30 0.7 270
47 44.0 50.0 100 37.4 52.5 440 0.05 33 0.6 246
51 48.0 54.0 125 40.8 56.5 440 0.05 36 0.5 226
56 52.0 60.0 150 46.8 63.0 440 0.05 39 0.4 208
62 58.0 66.0 175 52.2 72.5 435 0.05 43 0.4 186
68 64.0 72.0 200 60.5 81.0 435 0.05 48 0.35 171
75 70.0 80.0 225 66.5 88.0 435 0.05 53 0.3 161
BZV85-
CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 5 and 6
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
IZSM
IR (μA) VR
(V)
at tp = 100 μs;
Tamb = 25 °Cat tp = 10 ms;
Tamb = 25 °C
MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA)
1999 May 11 5
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZV85 series
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a printed circuit-board with 1 cm2 copper area per lead.
GRAPHICAL DATA
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W
Rth j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W
Fig.2 Thermal resistance from jun ction to tie-point with a lead length of 4 mm.
handbook, full pagewidth
10
−2
10
−1
11010
2
10
3
10
4
MBG929
1
10
10
2
10
3
tp (ms)
tptp
TT
δ
=
δ = 1
0.02
0.01
0
0.75
0.50
0.33
0.20
0.10
0.05
Rth j-tp
(K/W)
1999 May 11 6
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZV85 series
Fig.3 Non-repetitive peak reverse current a s a
function of the nomina l workin g voltage.
handbook, halfpage
MBG802
102
10 VZnom (V)
IZSM
(A)
10
110
2
10−1
1
(1)
(2)
(1) tp = 10 μs; half sinewave; Tamb = 25 °C.
(2) tp = 10 ms; half sinewave; Tamb = 25 °C. Fig.4 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0 1.0
300
0
100
200
MBG925
0.5 VF (V)
IF
(mA)
(1) (2)
(1) Tj = 200 °C.
(2) Tj = 25 °C.
Fig.5 Temperature coefficient as a funct ion of
working current; typical values.
BZV85-C3V6 to C10.
Tj = 25 to 150 °C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
handbook, halfpage
050
10
0
−5
5
MBG926
25 IZ (mA)
SZ
(mV/K)
4V7
4V3
3V6
3V9
10
9V1
8V2
7V5
6V8 6V2
5V6
5V1
Fig.6 Temperature coefficient as a funct ion of
nominal working voltage.
handbook, halfpage
100
0102
MBG800
10 VZnom (V)
SZ
(mV/K)
1
20
40
60
80 (2)
(1)
(3)
IZ = IZtest; Tj = 25 to 150 °C.
(1) Maximum values.
(2) Typical values.
(3) Minimum values.
1999 May 11 7
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZV85 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD66 DO-41 97-06-20
Hermetically sealed glass package; axial leaded; 2 leads SOD6
6
UNIT b
max.
mm 0.81
D
max. G1
max.
284.82.6
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 2 4 mm
scale
ka
1999 May 11 8
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZV85 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document befor e initiating or co mpleting a design.
2. The product s ta tus of device(s) described in this do cument may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t s pecification.
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Applications ⎯ Applications that are described herein for
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 115002/00/ 02/pp9 Date of releas e: 1999 May 11 Document orde r number: 9397 750 05929
