NX7002AKS,115 - NXP Semiconductors

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small

SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using T rench MOSFET

technology.

1.2 Features and benefits

Very fast switching

Trench MOSFET technology

ESD protection

1.3 Applications

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

NX7002AKS

60 V, dual N-channel Trench MOSFET

Rev. 1 — 1 March 2012 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

VDS drain-source voltage Tj=25°C --60V

VGS gate-source voltage -20 - 20 V

IDdrain current VGS =10V; T

amb =25°C [1] - - 170 mA

Static characteristics

RDSon drain-source on-state

resistance VGS =10V; I

D=100mA; T

j=25°C - 3 4.5 Ω

Product data sheet Rev. 1 — 1 March 2012 2 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] % = placeholder for manufacturing site code

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphic sym bol

1S1source TR1

SOT363 (TSSOP6)

2 G1 gate TR1

3D2drain TR2

4S2source TR2

5 G2 gate TR2

6D1drain TR1

132

017aaa256

Table 3. Ordering informatio n

Type number Package

Name Description Version

NX7002AKS TSSOP6 plastic surface-mounted package; 6 leads SOT363

Table 4. Marking codes

Type number Marking code[1]

NX7002AKS TD%

Product data sheet Rev. 1 — 1 March 2012 3 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VDS drain-source voltage Tj=25°C - 60 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

amb =25°C [1] - 170 mA

VGS =10V; T

amb = 100 °C [1] - 100 mA

IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 680 mA

Ptot total power dissipation Tamb =25°C [2] - 220 mW

[1] - 255 mW

Tsp = 25 °C - 1060 mW

Source-drain diode

ISsource current Tamb =25°C [1] - 170 mA

Per device

Ptot total power dissipation Tamb =25°C [2] - 330 mW

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Fig 1. Normalized total power dissipation as a

function of junction temp era tu re Fig 2. Normalized continuous drain current as a

function of junction temp erat ure

Tj (°C)

−75 17512525 75−25

017aaa123

120

Pder

(%)

Tj (°C)

−75 17512525 75−25

017aaa124

120

Ider

(%)

Product data sheet Rev. 1 — 1 March 2012 4 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM = single pul se

(1) tp= 100 µs

(2) tp= 1 ms

(3) tp= 10 ms

(4) DC; Tsp = 25 °C

(5) tp= 100 ms

(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

017aaa479

VDS (V)

10-1 102

101

10-1

10-2

(A)

10-3

Limit RDSon = VDS/ID

(1)

(2)

(3)

(4)

(5)

(6)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance

from junction to

ambient

in free air [1] - 500 560 K/W

[2] - 450 480 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

--115K/W

Product data sheet Rev. 1 — 1 March 2012 5 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa480

102

103

Zth(j-a)

(K/W)

10-1

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

duty cycle = 1

0.75 0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01

017aaa481

102

103

Zth(j-a)

(K/W)

10-1

10-5 1010-2

10-4 102

10-1

tp (s)

10-3 103

duty cycle = 1

0.75 0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01

Product data sheet Rev. 1 — 1 March 2012 6 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=25°C 60--V

VGSth gate-source threshold

voltage ID=250µA; V

DS =V

GS; Tj= 25 °C 1.1 1.6 2.1 V

IDSS drain leakage current VDS =60V; V

GS =0V; T

j=25°C --1µA

VDS =60V; V

GS =0V; T

j=150°C --10µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j=25°C --2µA

VGS =-20V; V

DS =0V; T

j=25°C --2µA

VGS =10V; V

DS =0V; T

j=25°C --0.5µA

VGS =-10V; V

DS =0V; T

j=25°C --0.5µA

VGS =5V; V

DS =0V; T

j= 25 °C - - 100 nA

VGS =-5V; V

DS =0V; T

j= 25 °C - - 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=100mA; T

j=25°C - 3 4.5 Ω

VGS =10V; I

D=100mA; T

j= 150 °C - 6.2 9.2 Ω

VGS =5V; I

D= 100 mA; Tj=25°C - 3.7 5.2 Ω

gfs forward

transconductance VDS =10V; I

D= 200 mA; Tj= 25 °C - 230 - mS

Dynamic characteristics

QG(tot) total gate charge VDS =30V; I

D= 200 mA; VGS =4.5V;

Tj=25°C - 0.33 0.43 nC

QGS gate-source charge - 0.12 - nC

QGD gate-drain charge - 0.09 - nC

Ciss input capacitance VDS =10V; f=1MHz; V

GS =0V;

Tj=25°C -1117pF

Coss output capacitance - 3.4 - pF

Crss reverse transfer

capacitance -1.4-pF

td(on) turn-on delay time VDS =40V; R

L= 250 Ω; VGS =10V;

RG(ext) =6Ω; Tj=25°C - 6 12 ns

trrise time - 7 - ns

td(off) turn-off delay time - 20 40 ns

tffall time - 14 - ns

Source-drain diode

VSD source-drain voltage IS=115mA; V

GS =0V; T

j= 25 °C 0.47 0.7 1.2 V

Product data sheet Rev. 1 — 1 March 2012 7 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

Tj= 25 °C Tj= 25 °C; VDS = 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Outp ut characteristics: drain current as a

function of drain-source voltage; typical values Fig 7. Subthreshold drain current as a function of

gate-source voltage

Tj= 25 °C ID= 0.2 A

(1) Tj= 150 °C

(2) Tj= 25 °C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

04312

017aaa469

0.10

0.05

0.15

0.20

(A)

10 V 5 V

3.5 V VGS = 3 V

2.5 V

2 V

017aaa470

VGS (V)

0321

10-4

10-5

10-3

(A)

10-6

(1) (2) (3)

ID (A)

0 0.200.150.05 0.10

017aaa471

RDSon

(Ω)

2.5 V 3.0 V

3.5 V

4.0 V

5.0 V

10 V

VGS (V)

0108462

017aaa472

RDSon

(Ω)

(1)

(2)

Product data sheet Rev. 1 — 1 March 2012 8 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

VDS > ID× RDSon

(1) Tj = 25 °C

(2) Tj= 150 °C

Fig 10. Transfer characteristics: drain curre nt as a

function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as

a function of junctio n temperature; typical

values

ID= 0.25 mA; VDS = VGS

(1) maximum values

(2) typical values

(3) minimum values

f = 1 MHz; VGS = 0 V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

junction temperature Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VGS (V)

054231

017aaa473

0.10

0.05

0.15

0.20

(A)

(1)

(2)

Tj (°C)

-60 180120060

017aaa474

1.0

0.5

1.5

2.0

Tj (°C)

-60 180120060

017aaa475

1.0

.1.5

0.5

2.0

2.5

VGS(th)

(V)

(1)

(2)

(3)

VDS (V)

10-1 102

101

017aaa476

102

(pF)

10-1

(1)

(2)

(3)

Product data sheet Rev. 1 — 1 March 2012 9 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

ID= 0.2 A; VDS = 30 V; Tamb = 25 °C

Fig 14. Gate-source voltage as a function of gate

charge; typical values Fig 15. Gate charge waveform definitions

VGS = 0 V

(1) Tj= 150 °C

(2) Tj= 25 °C

Fig 16. Source current as a function of source-drain voltage; typical values

QG (nC)

0 0.80.60.2 0.4

017aaa477

VGS

(V)

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

017aaa478

VSD (V)

0 1.20.80.4

0.10

0.05

0.15

0.20

(A)

(1) (2)

Product data sheet Rev. 1 — 1 March 2012 10 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

8. Test information

9. Package outline

Fig 17. Duty cycle definitio n

006aaa812

duty cycle δ =

Fig 18. Package outline SOT363 (TSSOP6)

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 1 — 1 March 2012 11 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

10. Soldering

Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)

Fig 20. Wave soldering footprint for SOT363 (TSSOP6)

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Product data sheet Rev. 1 — 1 March 2012 12 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

NX7002AKS v.1 20120301 Product data sheet - -

Product data sheet Rev. 1 — 1 March 2012 13 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) des cribed in this document may have changed since this document was publis hed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

12.2 Definitions

Preview— The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representat ions or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft— The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or comple teness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data s heet— A short data sheet is an extract from a full dat a sheet with

the same product type number(s) and title. A short data sheet is intended for

quick reference only and sh ould not be re lied upon to co ntain detailed and full

information. For detailed and full information see the relevant full data sheet,

which is available on request via the local NXP Semiconductors sales office.

In case of any inconsistency or conflict with th e short data sheet, the full data

sheet shall prevail.

Product specifica t io n— The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warr a nty and liability— Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial saleof NXP Semiconductors.

Right to make changes— NXP Semiconduct ors r eserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use— NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data— The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications— Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values— Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 1 March 2012 14 of 15

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

Terms and conditions of commercial sale— NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license— No thi ng in this do cu ment may be int er preted o r

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control— This document as well as the item(s) described her ein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products— Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without NXP Semicond uctors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations— A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-buslogo,ICODE,I-CODE,ITEC,Labelution

,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand

UCODE— are trademarks of NXP B.V.

HD RadioandHD Radiologo — are trad emarks of iBiq uity Digital Corporation.

13. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to:salesaddresses@nxp.com

NXP Semiconductors NX7002AKS

60 V, dual N-channel Trench MOSFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 1 March 2012

Document identifier: NX7002AKS

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

13 Contact information. . . . . . . . . . . . . . . . . . . . . .14

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NX7002AKS,115