©2001 Fairchild Semiconductor Corporation RHRD6120, RHRD6120S Rev. A
File Number
3981.1
RHRD6120, RHRD6120S
6A, 1200V Hyperfast Diodes
The RHRD6120 and RHRD6120S are hyperfast diodes with
soft recovery characteristics (t
rr
< 55ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits,
reducing power loss in the switching transistors.
Formerly development type TA49058.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD6120 TO-251 HR6120
RHRD6120S TO-252 HR6120
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, i.e., RHRD6120S9A.
K
A
CATHODE
(FLANGE)
ANODE
CATHODE
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRD6120, RHRD6120S UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 130
o
C)
6A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
12 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
60 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
260
o
C
Data Sheet January 2000
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-
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©2001 Fairchild Semiconductor Corporation RHRD6120, RHRD6120S Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 6A - - 3.2 V
I
F
= 6A, T
C
= 150
o
C - - 2.6 V
I
R
V
R
= 1200V - - 100
µ
A
V
R
= 1200V, T
C
= 150
o
C--500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s--55ns
I
F
= 6A, dI
F
/dt = 200A/
µ
s--65ns
t
a
I
F
= 6A, dI
F
/dt = 200A/
µ
s-33-ns
t
b
I
F
= 6A, dI
F
/dt = 200A/
µ
s-22-ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
µ
s-210-nC
C
J
V
R
= 10V, I
F
= 0A - 22 - pF
R
θ
JC
--3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
1
30
0.5
10
012
175oC25oC
100oC
IF, FORWARD CURRENT (A)
34 0 1200800600400
100
0.01
0.1
1
10
500
200 1000
100oC
175oC
25oC
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
RHRD6120, RHRD6120S
©2001 Fairchild Semiconductor Corporation RHRD6120, RHRD6120S Rev. A
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
1
0
40
60
50
0.5 6
30
10
t, RECOVERY TIMES (ns)
trr
ta
tb
20
TC = 25oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
1
60
100
80
0.5 6
40
20
ta
tb
0
t, RECOVERY TIMES (ns)
trr
TC = 100oC, dIF/dt = 200A/µs
trr
IF, FORWARD CURRENT (A)
1
0
100
125
0.5 6
75
50
25
t, RECOVERY TIMES (ns)
ta
tb
TC = 175oC, dIF/dt = 200A/µs
6
1
0115 130 160100 175145
2
3
5
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
DC
SQ. WAVE
4
VR, REVERSE VOLTAGE (V)
40
0
80
0 50 100 150 200
60
20
CJ, JUNCTION CAPACITANCE (pF)
100
RHRD6120, RHRD6120S
©2001 Fairchild Semiconductor Corporation RHRD6120, RHRD6120S Rev. A
Test Circuits and Waveforms
FIGURE 8. t
rr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RHRD6120, RHRD6120S
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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POP™
PowerTrench
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FAST
FASTr™
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GTO™
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ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
Rev. H
ACEx™
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CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
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F ACT Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET™
VCX™
