BUZ110S-E3045A - Infineon Technologies

BUZ 110S

Data Book 1 05.99

SIPMOSPower Transistor

Product Summary

Drain source voltage 55

V

DS

V

Drain-Source on-state resistance Ω

0.01

R

DS(on)

I

D

Continuous drain current 80 A

Features

•N channel

•

Enhancement mode

•Avalanche rated

•d

v

/d

t

rated

•175 ˚C operating temperature

Pin 1 Pin 2 Pin 3

G D S

PackagingType Package Ordering Code

BUZ110S TubeP-TO220-3-1 Q67040-S4005-A2

BUZ110S E3045A Tape and ReelQ67040-S4005-A6P-TO263-3-2

TubeBUZ110S E3045 P-TO263-3-2 Q67040-S4005-A5

Maximum Ratings,at

T

j= 25 ˚C unless otherwise specified

Parameter Symbol UnitValue

Continuous drain current

T

C

= 25 ˚C,

limited by bond wire

T

C

= 100˚C

80

66

I

D

A

Pulsed drain current

T

C

= 25 ˚C

I

Dpulse

320

Avalanche energy, single pulse

I

D

=80A,

V

DD

=25V,

R

GS

=25Ω

mJ

E

AS

460

Avalanche energy, periodic limited by

T

jmax

20

E

AR

Reverse diode d

v

/d

t

I

S

=80A,

V

DS

=40V, d

i

/d

t

= 200 A/

µ

s,

T

jmax

= 175 ˚C

d

v

/d

t

6kV/

µ

s

Gate source voltage

V

GS

±20 V

Power dissipation

T

C

= 25 ˚C

P

tot

200 W

Operating and storage temperature

T

j,

T

stg

˚C-55... +175

55/175/56IEC climatic category; DIN IEC 68-1

BUZ 110S

Data Book 2 05.99

Thermal Characteristics

Parameter ValuesSymbol Unit

typ. max.min.

Characteristics

R

thJC

- - 0.75 K/WThermal resistance, junction - case

-Thermal resistance, junction - ambient, leded

R

thJA

-62

-

62

40

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol UnitValues

min. max.typ.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

I

D

= 0.25 mA

-

V

(BR)DSS

55 - V

Gate threshold voltage,

V

GS

=

V

DS

I

D

= 200 µA

V

GS(th)

432.1

Zero gate voltage drain current

V

DS

= 50 V,

V

GS

= 0 V,

T

j

= 25 ˚C

V

DS

= 50 V,

V

GS

= 0 V,

T

j

= 150 ˚C

-

I

DSS

µA

1

100

0.1

-

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

I

GSS

-10 nA100

Drain-Source on-state resistance

V

GS

= 10 V,

I

D

= 66 A

R

DS(on)

-0.009 0.01

Ω

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain

connection. PCB is vertical without blown air.

BUZ 110S

Data Book 3 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥2*

I

D

*

R

DS(on)max

,

I

D

= 66 A

g

fs

30 49 - S

Input capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

iss

-2420 3025 pF

Output capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

oss

-745 930

Reverse transfer capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

rss

-380 475

Turn-on delay time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 80 A,

R

G

= 3.9 Ω

t

d(on)

-20 30 ns

Rise time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 80 A,

R

G

= 3.9 Ω

t

r

-35 55

Turn-off delay time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 80 A,

R

G

= 3.9 Ω

t

d(off)

-45 70

Fall time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 80 A,

R

G

= 3.9 Ω

t

f

-30 45

BUZ 110S

Data Book 4 05.99

Electrical Characteristics, at

T

j

= 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD

= 40 V,

I

D

= 80 A

26 nC17

Q

gs

-

-41

Q

gd

Gate to drain charge

V

DD

= 40 V,

I

D

= 80 A

61.5

Gate charge total

V

DD

= 40 V,

I

D

= 80 A,

V

GS

= 0 to 10 V

-85 130

Q

g

Gate plateau voltage

V

DD

= 40 V,

I

D

= 80 A

V

(plateau)

5.8 - V-

Reverse Diode

Inverse diode continuous forward current

T

C

= 25 ˚C

I

S

- - 80 A

Inverse diode direct current,pulsed

T

C

= 25 ˚C

I

SM

- - 320

Inverse diode forward voltage

V

GS

= 0 V,

I

F

= 160 A

V

SD

-1.3 V2

Reverse recovery time

V

R

= 30 V,

I

F

=

I

S

, d

i

F

/d

t

= 100 A/µs

t

rr

-80 ns120

Reverse recovery charge

V

R

= 30 V,

I

F=

l

S

, d

i

F

/d

t

= 100 A/µs

Q

rr

-µC0.17 0.25

BUZ 110S

Data Book 5 05.99

Power Dissipation

P

tot

=

f

(

T

C

)

020 40 60 80 100 120 140 160 ˚C190

T

C

0

20

40

60

80

100

120

140

160

180

W

220

BUZ110S

P

tot

Drain current

I

D

=

f

(

T

C

)

parameter:

V

GS

≥ 10 V

020 40 60 80 100 120 140 160 ˚C190

T

C

0

10

20

30

40

50

60

70

A

90

BUZ110S

I

D

Transient thermal impedance

Z

thJC

=

f

(

t

p

)

parameter :

D

=

t

p

/

T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

BUZ110S

Z

thJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D

=

f

(

V

DS

)

parameter :

D

= 0 ,

T

C

= 25 ˚C

10 -1 10 0 10 1 10 2

V

DS

0

10

1

10

2

10

3

10

A

BUZ110S

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

10 µs

t

p = 8.7µs

BUZ 110S

Data Book 6 05.99

Typ. output characteristics

I

D

=

f

(

V

DS

)

parameter:

t

p

= 80 µs

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0

V

DS

0

20

40

60

80

100

120

140

160

A

190

BUZ110S

I

D

V

GS [V]

a

a4.0

b

b4.5

c

c5.0

d

d5.5

e

e6.0

ff6.5

g

g7.0

h

h7.5

i

i8.0

j

j9.0

k

k 10.0

l

P

tot = 200W

l 20.0

Typ. drain-source-on-resistance

R

DS(on)

=

f

(

I

D

)

parameter:

V

GS

020 40 60 80 100 120 140 A170

I

D

0.000

0.004

0.008

0.012

0.016

0.020

0.024

Ω

0.032

BUZ110S

R

DS(on)

V

GS [V] =

c

5.0

d

5.5

e

6.0

f

6.5

g

7.0

h

7.5

i

8.0

j

9.0

k

10.0

l

20.0

Typ. transfer characteristics

I

D

=

f

(

V

GS

)

parameter:

t

p

= 80 µs

V

DS

≥ 2 x

I

D

x

R

DS(on) max

2.5 3.0 3.5 4.0 4.5 5.0 V6.0

V

GS

0

10

20

30

40

50

60

A

80

I

D

Typ. forward transconductance

g

fs

= f

(

I

D

)

;

T

j

= 25˚C

parameter:

g

fs

010 20 30 40 50 A65

I

D

0

5

10

15

20

25

30

35

40

45

S

55

g

fs

BUZ 110S

Data Book 7 05.99

Drain-source on-resistance

R

DS(on)

=

f

(

T

j

)

parameter :

I

D

= 66 A,

V

GS

= 10 V

-60 -20 20 60 100 140 ˚C200

T

j

0.000

0.004

0.008

0.012

0.016

0.020

0.024

0.028

Ω

0.034

BUZ110S

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th)

=

f

(

T

j

)

parameter :

V

GS

=

V

DS

,

I

D

= 200 µA

-60 -20 20 60 100 140 ˚C200

T

j

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

4.4

V

5.0

V

GS(th)

min

typ

max

Typ. capacitances

C =

f

(V

DS

)

parameter:

V

GS

= 0 V,

f

= 1 MHz

010 20 V40

V

DS

2

10

3

10

4

10

pF

C

Ciss

Coss

Crss

Forward characteristics of reverse diode

I

F

=

f

(

V

SD

)

parameter:

T

j

,

t

p

= 80 µs

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

0

10

1

10

2

10

3

10

A

BUZ110S

I

F

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 175 ˚C typ

T

j = 175 ˚C (98%)

BUZ 110S

Data Book 8 05.99

Typ. gate charge

V

GS

=

f

(

Q

Gate

)

parameter:

I

D puls

= 80 A

020 40 60 80 100 nC 130

Q

Gate

0

2

4

6

8

10

12

V

16

BUZ110S

V

GS

DS max

V

0,8

DS max

V

0,2

Avalanche Energy

E

AS

=

f

(

T

j

)

parameter:

I

D

= 80 A,

V

DD

= 25 V

R

GS

= 25 Ω

20 40 60 80 100 120 140 ˚C180

T

j

0

50

100

150

200

250

300

350

400

mJ

500

E

AS

Drain-source breakdown voltage

V

(BR)DSS

=

f

(

T

j

)

-60 -20 20 60 100 140 ˚C200

T

j

50

52

54

56

58

60

62

64

V

66

BUZ110S

V

(BR)DSS