AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago's 10 GHz ft , 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. * High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation * 900 MHz Performance: 1.1 dB NF, 14.5 dB GA * Characterized for End-of-Life Battery Use (2.7 V) * SOT-363 (SC-70) Plastic Package * Tape-and-Reel Packaging Option Available * Lead-free Surface Mount Package SOT-363 (SC-70) I The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. Features I Description Pin Connections and Package Marking 1 6 2 5 3 4 B1 C1 E1 C2 E2 B2 AT-32063 Absolute Maximum Ratings[1] Symbol Parameter Units Thermal Resistance[2]: jc = 370C/W Absolute Maximum VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 11 VCEO Collector-Emitter Voltage V 5.5 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25C. 3. Derate at 2.7 mW/C for TC > 94.5C. 4. 150 mW per device. IC Collector Current mA 32 PT Power Dissipation[2,3] mW 150 Tj Junction Temperature C 150 TSTG Storage Temperature C -65 to 150 Electrical Specifications, TA = 25C Symbol Parameters and Test Conditions Units Min. Typ. Max. 1.1[2] 1.4[2] NF Noise Figure; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB GA Associated Gain; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 12.5[2] hFE Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA -- 50 ICBO Collector Cutoff Current; VCB = 3 V A 0.2 IEBO Noise Figure; VEB = 1 V A 1.5 Notes: 14.5[2] 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB. 50 50 W = 10 L = 450 TEST CIRCUIT BOARD MATERIAL = 0.047 GETEK (e = 4.3) W = 20 L = 60 DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. W = 10 L = 100 270 AT-32063 Characterization Information, TA = 25C Symbol Parameters and Test Conditions Units Typ. P1 dB Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 12 G1 dB Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16 IP3 Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 20.0 1.50 15.0 1.00 0.50 0 0.9 14 10.0 5.0 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA 1.8 15 P1 dB (dBm) 2.00 Ga (dB) NOISE FIGURE (dB) Typical Performance, TA = 25C 0 0.9 2.4 1.8 2.4 FREQUENCY (GHz) Figure 2. Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V. 25 15 20 IP3 (dBm) G1 dB (dBm) 12 9 6 0 0.9 1.8 2.4 FREQUENCY (GHz) Figure 5. 1 dB Compressed Gain vs. Frequency at VCE = 2.7 V and IC = 20 mA. 15 10 2 mA 5 mA 10 mA 20 mA 5 3 0 0 0.5 1.0 1.5 10 0.9 1.8 2.4 FREQUENCY (GHz) Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. 18 12 11 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA FREQUENCY (GHz) 13 2.0 2.5 FREQUENCY (GHz) Figure 6. Third Order Intercept vs. Frequency and Bias at VCE = 2.7 V, with Optimal Tuning. Figure 4. Power at 1 dB Gain Compression vs. Frequency at VCE = 2.7 V and IC = 20 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 1 V, IC = 1 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.98 0.86 0.72 0.69 0.58 0.52 0.49 0.45 0.41 0.42 0.47 -11 -50 -82 -88 -119 -134 -145 -165 166 124 93 11.36 10.14 8.39 7.87 5.87 4.83 4.3 3.16 1.84 0.17 -1.15 3.7 3.21 2.63 2.48 1.97 1.74 1.64 1.44 1.24 1.02 0.88 171 138 113 108 85 74 67 55 39 16 -2 -34.77 -22.02 -18.97 -18.61 -17.8 -17.72 -17.69 -17.68 -16.99 -13.67 -9.84 0.02 0.08 0.11 0.12 0.13 0.13 0.13 0.13 0.14 0.21 0.32 83 59 43 41 31 28 28 30 37 45 38 0.99 0.91 0.82 0.8 0.73 0.7 0.68 0.67 0.64 0.6 0.54 -4 -20 -31 -32 -41 -45 -48 -54 -63 -81 -107 25 20 AT-32063 Typical Noise Parameters MSG Common Emitter, Zo = 50 , VCE = 1 V, IC = 1 mA Freq.FminGAGoptRn GHz dB dB Mag. Ang. -- 0.9 1.8 2.4 0.71 1.37 1.80 10.4 8.3 7.2 0.76 0.60 0.50 50 112 155 0.44 0.24 0.10 GAIN (dB) 15 10 MAG MSG 5 S21 0 -5 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 7. Gain vs. Frequency at VCE = 1 V, IC = 1 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 2 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.77 0.59 0.55 0.42 0.37 0.34 0.29 0.26 0.28 0.33 -12 -55 -87 -93 -121 -135 -145 -164 167 124 94 16.46 14.73 12.37 11.74 9.26 8.01 7.35 6.05 4.54 2.73 1.36 6.66 5.45 4.15 3.86 2.90 2.52 2.33 2.01 1.69 1.37 1.17 169 132 107 103 83 73 67 56 41 20 1 -37.32 -25.13 -22.42 -22.07 -20.79 -20.13 -19.67 -18.68 -16.95 -13.75 -10.70 0.014 0.055 0.076 0.079 0.091 0.099 0.104 0.116 0.142 0.205 0.292 82 59 48 47 44 45 46 48 50 48 41 0.98 0.87 0.76 0.74 0.69 0.67 0.66 0.65 0.64 0.61 0.57 -5 -21 -29 -30 -36 -39 -41 -46 -53 -68 -89 30 25 AT-32063 Typical Noise Parameters Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 2 mA dB dB Mag. Ang. -- 0.9 1.8 2.4 0.78 1.25 1.57 14.3 10.7 9.1 0.65 0.45 0.35 50 105 145 0.31 0.20 0.13 GAIN (dB) 20 Freq.FminGAGoptRn GHz MSG 15 MAG 10 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 8. Gain vs. Frequency at VCE = 2.7 V, IC = 2 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 5 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.87 0.52 0.34 0.31 0.22 0.19 0.17 0.14 0.12 0.16 0.22 -19 -72 -101 -106 -129 -141 -150 -169 160 117 93 23.36 19.21 15.40 14.60 11.54 10.12 9.33 7.95 6.34 4.46 3.15 S12 S22 Mag Ang dB Mag Ang Mag Ang 14.72 9.13 5.89 5.37 3.77 3.21 2.93 2.50 2.08 1.67 1.44 162 116 94 90 74 66 61 52 39 20 2 -37.77 -27.03 -24.01 -23.41 -20.85 -19.52 -18.72 -17.22 -15.25 -12.40 -10.03 0.013 0.045 0.063 0.067 0.091 0.106 0.116 0.138 0.173 0.240 0.315 80 60 58 58 58 58 57 56 52 44 33 0.96 0.72 0.62 0.61 0.58 0.57 0.57 0.57 0.56 0.53 0.48 -9 -25 -28 -29 -33 -36 -38 -42 -49 -63 -82 35 30 AT-32063 Typical Noise Parameters 25 Freq.FminGAGoptRn GHz dB dB Mag. Ang. -- 0.9 1.8 2.4 0.98 1.50 1.77 16.4 11.6 10.1 0.45 0.29 0.33 51 100 153 0.23 0.16 0.11 GAIN (dB) Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 5 mA MSG 20 15 MAG 10 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 9. Gain vs. Frequency at VCE = 2.7 V, IC = 5 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 2.7 V, IC = 20 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.55 0.20 0.13 0.13 0.10 0.09 0.09 0.08 0.10 0.15 0.21 -41 -107 -137 -141 -164 -178 172 152 127 101 86 30.48 21.24 16.48 15.60 12.26 10.78 9.93 8.52 6.85 4.92 3.59 S12 S22 Mag Ang dB Mag Ang Mag Ang 33.40 11.53 6.66 6.02 4.10 3.46 3.14 2.67 2.20 1.76 1.51 143 97 82 79 67 60 56 48 36 18 0 -39.81 -29.18 -24.63 -23.79 -20.43 -18.88 -17.98 -16.39 -14.4 -11.68 -9.52 0.010 0.035 0.059 0.065 0.095 0.114 0.126 0.151 0.191 0.261 0.334 74 72 72 71 68 66 64 60 54 43 31 0.83 0.56 0.53 0.53 0.52 0.53 0.53 0.53 0.52 0.48 0.44 -15 -20 -22 -22 -27 -31 -34 -39 -47 -61 -79 40 35 AT-32063 Typical Noise Parameters Freq.FminGAGoptRn GHz dB dB Mag. Ang. -- 0.9 1.8 2.4 1.51 1.78 1.96 17.9 12.7 10.6 0.13 0.20 0.28 88 178 235 0.20 0.13 0.08 GAIN (dB) 30 Common Emitter, Zo = 50 , VCE = 2.7 V, IC = 20 mA MSG 25 20 MAG 15 MSG 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 10. Gain vs. Frequency at VCE = 2.7 V, IC = 20 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 5 V, IC = 2 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.78 0.59 0.56 0.42 0.36 0.33 0.28 0.24 0.25 0.31 -12 -53 -84 -90 -117 -131 -140 -159 171 126 95 16.50 14.84 12.5 11.92 9.46 8.21 7.55 6.24 4.72 2.88 1.49 6.69 5.52 4.23 3.94 2.97 2.57 2.38 2.05 1.72 1.39 1.19 169 133 108 104 84 74 68 57 43 21 3 -38.44 -26.20 -23.4 -23.04 -21.71 -21.04 -20.56 -19.54 -17.76 -14.47 -11.32 0.012 0.049 0.068 0.070 0.082 0.089 0.094 0.105 0.129 0.189 0.272 82 60 50 49 46 47 48 50 53 52 45 0.98 0.88 0.79 0.77 0.72 0.70 0.69 0.69 0.68 0.66 0.63 -5 -19 -27 -28 -33 -36 -39 -43 -50 -64 -83 30 25 AT-32063 Typical Noise Parameters Common Emitter, Zo = 50 , VCE = 5 V, IC = 2 mA 0.9 1.8 2.4 dB dB 0.75 1.26 1.60 Mag. 13.7 10.8 9.6 Ang. 0.74 0.55 0.45 47 101 139 GAIN (dB) Freq.FminGAGoptRn GHz MSG 20 -- 15 MAG 10 0.37 0.22 0.13 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 11. Gain vs. Frequency at VCE = 5 V, IC = 2 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 , VCE = 5 V, IC = 20 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.61 0.22 0.13 0.12 0.08 0.06 0.06 0.04 0.05 0.10 0.16 -36 -91 -115 -118 -137 -148 -159 175 131 99 86 30.56 21.75 17.02 16.14 12.80 11.31 10.46 9.02 7.35 5.39 4.05 S12 S22 Mag Ang dB Mag Ang Mag Ang 33.74 12.23 7.10 6.41 4.36 3.68 3.33 2.83 2.33 1.86 1.6 145 98 83 81 68 62 58 50 39 21 3 -40.46 -29.90 -25.40 -24.56 -21.23 -19.69 -18.79 -17.21 -15.22 -12.48 -10.27 0.01 0.03 0.05 0.06 0.09 0.10 0.12 0.14 0.17 0.24 0.31 75 72 72 71 69 66 65 61 56 46 34 0.86 0.6 0.57 0.57 0.57 0.57 0.57 0.57 0.56 0.54 0.50 -14 -19 -21 -21 -26 -30 -32 -37 -45 -58 -75 40 35 AT-32063 Typical Noise Parameters Common Emitter, Zo = 50 , VCE = 5 V, IC = 20 mA Freq.FminGAGoptRn GHz dB dB Mag. Ang. -- 0.9 1.8 2.4 1.50 1.78 1.96 18.6 13.3 11.3 0.18 0.19 0.24 74 147 198 0.20 0.16 0.14 GAIN (dB) 30 MSG 25 20 MAG 15 MSG 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 12. Gain vs. Frequency at VCE = 5 V, IC = 20 mA. Ordering Information Part Numbers No. of Devices Comments AT-32063-BLKG 100 Bulk AT-32063-TR1G 3000 7" Reel AT-32063-TR2G 10000 13" Reel Package Dimensions Outline 63 (SOT-363/SC-70) HE E L e c D A1 DIMENSIONS (mm) A2 b A SYMBOL E D HE A A2 A1 e b c L MIN. MAX. 1.15 1.35 1.80 2.25 1.80 2.40 0.80 1.10 0.80 1.00 0.00 0.10 0.650 BCS 0.15 0.30 0.08 0.25 0.10 0.46 Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm II II II II Tape Dimensions For Outline 63 P P2 D P P2 D P0 P0 E E F F W D1 t1 (CARRIER TAPE THICKNESS) D1 t1 (CARRIER TAPE THICKNESS) K0 8 MAX. 5 MAX. K0 8 MAX. 5 MAX. A0 DESCRIPTION CAVITY CAVITY PERFORATION CARRIER TAPE B0 A0 LENGTH WIDTH DESCRIPTION DEPTH PITCH LENGTH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 WIDTH DIAMETER D DEPTH PITCH P0 PITCH POSITION E BOTTOM HOLE DIAMETER WIDTH PERFORATION THICKNESS DIAMETER PITCH DISTANCE CAVITY TO PERFORATION POSITION (WIDTH DIRECTION) TO PERFORATION CARRIER TAPECAVITY WIDTH (LENGTH DIRECTION) THICKNESS DISTANCE SYMBOL SIZE (mm) 2.24 0.10 2.34 0.10 SIZE (INCHES) B0 0.088 0.004 0.092 0.004 SYMBOL (mm) 1.22 0.10 SIZE 0.048 0.004 SIZE (INCHES) 4.00 0.004 0.088 0.004 A0 0.10 2.24 0.157 0.10 1.00 + 0.25 0.039 + 0.010 B0 2.34 0.10 0.092 0.004 D1 1.00 + 0.25 0.039 + 0.010 P0 E 4.00 0.10 0.157 0.004 0.002 1.75 0.138 0.10 0.069 0.004 1.55 0.002 0.048 0.004 K0 0.05 1.22 0.061 0.10 4.00 0.10 0.004 P 4.00 0.157 0.10 0.157 0.004 1.75 0.10 0.069 0.004 W t1 8.00 0.30 0.315 0.012 D 1.55 0.010 0.05 0.255 0.013 0.00050.061 0.002 F 3.50 0.05 P2 2.00 0.002 0.315 0.012 W 0.05 8.00 0.079 0.30 t1 0.255 0.013 0.010 0.0005 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2645EN AV02-1456EN - June 9, 2009 W