2 2019-03-26
IRFF9230
JANTX2N6851/JANTXV2N6851/JANS2N6851
International Rectifier HiRel Products, Inc.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 5.0
RJA Junction-to-Ambient (Typical Socket Mount) ––– ––– 175 °C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.22 ––– V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.80 VGS = -10V, ID2 = -2.4A
––– ––– 0.83 VGS = -10V, ID1 = -4.0A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -160V, VGS = 0V
––– ––– -250 VDS = -160V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge 14.7 ––– 34.8
nC
ID1 = -4.0A
QGS Gate-to-Source Charge 0.8 ––– 6.1 VDS = -100V
QGD Gate-to-Drain (‘Miller’) Charge 5.0 ––– 20.5 VGS = -10V
td(on) Turn-On Delay Time ––– ––– 50
ns
VDD = -75V
tr Rise Time ––– ––– 100 ID1 = -4.0A
td(off) Turn-Off Delay Time ––– ––– 80 RG = 7.5
tf Fall Time ––– ––– 80 VGS = -10V
Ls +LD Total Inductance ––– 7.0 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ciss Input Capacitance ––– 700 –––
pF
VGS = 0V
Coss Output Capacitance ––– 200 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 40 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -4.0
ISM Pulsed Source Current (Body Diode) ––– ––– -20
VSD Diode Forward Voltage ––– ––– -5.6 V TJ = 25°C,IS = -4.0A, VGS = 0V
trr Reverse Recovery Time ––– ––– 400 ns TJ = 25°C, IF = -4.0A, VDD ≤ -50V
Qrr Reverse Recovery Charge ––– ––– 4.0 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -50V, starting TJ = 25°C, Peak IL = -4.0A, VGS = -10V
ISD -4.0A, di/dt -120A/µs, VDD -200V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%