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IRUD200CH20PbF
Bulletin PD-21143 05/06
Features
FRED
• Very Low Qrr and trr
• Lead-Free
Ultrafast, Soft Recovery Diode
These diodes are optimized to reduce losses and EMI/
RFI in high frequency power conditioning systems. The
softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are significant
portion of the total losses.
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
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Major Ratings and Characteristics
IF(AV) Rectangular 240 A
waveform
VRRM 200 V
IFSM @ tp = 5 μs sine 20000 A
VF@
240Apk, TJ=125°C 0.78 V
T
Jrange - 55 to 175 °C
Characteristics Values Units
Description/ Features
Case Styles
HALF-PAK (D-67)
IRUD200CH20PbF
Bulletin PD-21143 05/06
2www.irf.com
IF(AV) Max. Average Forward Current 240 A 50% duty cycle @ TC = 127 °C, rectangular wave form
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive 20000 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 2300 10ms Sine or 6ms Rect. pulse
Part number IRUD200CH20PbF
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM
applied
Parameters IRUD200 Units Conditions
A
(1) Pulse Width 500μs
VFM Max. Forward Voltage Drop 1.21 V @ 240A
* See Fig. 1 (1) 1.51 V @ 480A
0.9 V @ 240A
1.1 V @ 480A
IRM Max. Reverse Leakage Current 100 μAT
J = 25 °C
* See Fig. 2 3 mA TJ = 125 °C
CTMax. Junction Capacitance 6000 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 5.0 nH From top of terminal hole to mounting plane
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Parameters IRUD200 Units Conditions
Electrical Specifications
200
trr Reverse Recovery Time - 70 - ns If = 200A, dif/dt = 200A/μs, Vr = 200V
-88- I
f = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C
IRRM Peak Recovery Current - 10.6 - A If = 200A, dif/dt = 200A/μs, Vr = 200V
- 14.2 - If = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C
Qrr Reverse Recovery Charge - 350 - nC If = 200A, dif/dt = 200A/μs, Vr = 200V
- 630 - If = 200A, dif/dt =200A/μs, Vr =200V @ TJ = 125°C
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
Bulletin PD-21143 05/06
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IRUD200CH20PbF
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TJMax. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range -55 to 175 °C
RthJC Max. Thermal Resistance Junction 0.19 °C/W DC operation * See Fig. 4
to Case
RthCS Typical Thermal Resistance, Case to 0.05 °C/W Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 30 (1.06) g (oz.)
T Mounting Torque Min. 3 (26.5) Non-lubricated threads
Max. 4 (35.4)
Terminal Torque Min. 3.4 (30)
Max. 5 (44.2)
Case Style HALF PAK Module
Thermal-Mechanical Specifications
Parameters IRUD200 Units Conditions
Nm
(Ibf-in)
Fig. 1 - Max. Forward Voltage Drop Characteristics
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I F (A)
Reverse Current - I R ( μA)
Reverse Voltage - V R (V)
Reverse Voltage - V R (V)
Junction Capacitance - C T (pF)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
100
1000
10000
0 306090120
T = 25˚C
J
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
50 100 150 200
0.01
0.1
1
10
100
1000
25°C
125°C
175°C
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
IRUD200CH20PbF
Bulletin PD-21143 05/06
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Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z thJC (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Average Forward Current - I F (AV)
(A)
Allowable Case Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Average Forward Current - I F (AV) (A)
Average Power Loss (Watts)
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
0 50 100 150 200 250 300
0
50
100
150
200
250
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
050 100 150 200 250 300 350
60
80
100
120
140
160
180
200
DC
Square wave (D=0.50)
80% rated Vr applied
see note (2)
Bulletin PD-21143 05/06
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IRUD200CH20PbF
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Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
Non-Repetitive Surge Current - I FSM (A)
1000
10000
100000
10 100 1000 10000
At Any Rated Load Condition
And With Rated V Applied
Following Surge RRM
Fig. 8 - Typical Reverse Recovery vs. dif /dt
di f / dt - (A/μs)
t RR (ns)
100 200 300 400 500
70
75
80
85
90
95
100
105
200A
100A
Tj = 125°C
Vr = 200V
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
Fig. 9- Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di F /dt
IRUD200CH20PbF
Bulletin PD-21143 05/06
6www.irf.com
Outline Table
HALF-PAK (D-67)
Dimensions in millimeters and (inches)
Fig. 10 - Reverse Recovery Waveform and Definitions
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
di F /dt
4. Qrr - Area under curve defined by t rr
and IRRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Q rr = t rr x I RRM
2
Bulletin PD-21143 05/06
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IRUD200CH20PbF
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
Ordering Information Table
IR UD 200 C H 2 0 PbF
Device Code
15
24
3
1- International Rectifier
2- Ultrafast Diode
3Current Rating
4- Circuit Configuration
C = Not-isolated
5- Type of Device :
H = Half-pak (D-67)
6- Voltage Rating (20 = 200V)
7- Lead-Free
67
