TLP706F
2007-10-01 1
Weight：0.26 g (typ.)
TOSHIBA 11-5J101
Unit in mm
0.25± −0.05
+0.10
4.58±0.25
0.4±0.1
1 2 3
6.8±0.25
1.27±0.2
3.65
+0.15
−0.25
6 5 4
11.7±0.3
3.9
+0.25
−0.15
0.75±0.25
7.62±0.25
11-5J101
TOSHIBA PHOTOCOUPLER GaAℓAs IRED & PHOTO-IC
TLP706F
Intelligent power module signal isolation
Industrial inverters
Motor drive
The Toshiba TLP706F consists of a GaAℓAs light-emitting diode and an
integrated high-gain, high-speed photodetector. The TLP706F is suitable for
isolating input control signals to intelligent power modules. This unit is a 6-pin
SDIP. The TLP706F is 50% smaller than the 8-PIN DIP and meets the
reinforced insulation class requirements of international safety standards.
Therefore the mounting area can be reduced in equipment requiring safety
standard certification.
The detector has a totem pole output stage to provide both source and sink
driving.The detector IC has an internal shield that provides a guaranteed
common-mode transient immunity of 10 kV/μs.
The TLP706F is buffer logic type. For inverter logic type, the TLP702F is in
line-up.
Absolute Maxmum ratings and electrical characteristics are the same as
The TLP706 technical data sheets.
z Buffer logic type ( totem pole output )
z Guaranteed performance over temperature : −40~100°C
z Power supply voltage : 4.5~20 V
z Input current: IFHL = 5 mA (max.)
z Switching time ( tpLH / tpHL) : 600 ns (max.)
z Common-mode transient immunity : ±10 kV/μs (min)
z Isolation voltage : 5000 Vrms (min)
z UL Recognized :UL1577, File No.E67349
z Option (D4)
TÜV Approved : DIN EN60747-5-2
No.R50033433
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage : 8000VPK
(Note) : When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
z Construction Mechanical Rating
Truth Table
Input LED Tr1 Tr2 Output
H ON ON OFF H
L OFF OFF ON L
Creepage Distance
Clearance
Insulation Thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
VCC
GND
SHIELD
1
34
5
6
2
1:ANODE
2:N.C.
3:CATHODE
4:GND
5:Vo
6:Vcc
Pin Configuration (Top View)
VCC
VO
GND
ICC
IO
6
5
4
SHIELD
3－
1＋
IF
VF
Tr1
Tr2
0.1
μ
F bypass capacitor must be
connected between pins 6 and 4. (Note 4)
Schematic
TLP706F
2007-10-01 2
RESTRICTIONS ON PRODUCT USE
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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
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• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
