/TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C Tvj = -25C VCES 3300 3300 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 400 750 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 4,90 kW Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. A A typ. max. 3,00 3,70 3,65 4,45 V V 4,2 5,1 6,0 V QG 7,50 C Tvj = 25C RGint 1,3 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 48,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,70 nF - Collector-emittercut-offcurrent VCE = 3300 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Collector-emittersaturationvoltage IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Gatethresholdvoltage IC = 40,0 mA, VCE = VGE, Tvj = 25C VGEth Gatecharge VGE = -15 V ... +15 V, VCE = 1800V Internalgateresistor Tvj = 25C Tvj = 125C VCE sat () Turn-ondelaytime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGon = 13 , CGE = 100 nF Tvj = 25C Tvj = 125C td on 1,00 1,00 s s () Risetime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGon = 13 , CGE = 100 nF Tvj = 25C Tvj = 125C tr 0,40 0,40 s s () Turn-offdelaytime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGoff = 13 , CGE = 100 nF Tvj = 25C Tvj = 125C td off 3,70 3,90 s s () Falltime,inductiveload IC = 400 A, VCE = 1800 V VGE = 15 V RGoff = 13 , CGE = 100 nF Tvj = 25C Tvj = 125C tf 0,25 0,35 s s () Turn-onenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = 15 V, di/dt = 3000 A/s RGon = 6,2 , CGE = 100 nF Tvj = 25C Tvj = 125C Eon 900 1200 mJ mJ ( Turn-offenergylossperpulse IC = 400 A, VCE = 1800 V, LS = 60 nH VGE = 15 V RGoff = 13 , CGE = 100 nF Tvj = 25C Tvj = 125C Eoff 440 600 mJ mJ SCdata VGE 15 V, VCC = 2500 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 24,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 1 tP 10 s, Tvj = 125C 1800 A 25,5 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C Tvj = -25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C Maximumpowerdissipation Minimumturn-ontime VRRM 3300 3300 V IF 400 A IFRM 800 A It 72,0 kAs Tvj = 125C PRQM 600 kW ton min 10,0 s /CharacteristicValues min. Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 400 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V IRM Recoveredcharge IF = 400 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V Reverserecoveryenergy typ. max. 2,60 t.b.d. 2,55 V V 600 670 A A Qr 270 480 C C IF = 400 A, - diF/dt = 3000 A/s (Tvj=125C) Tvj = 25C VR = 1800 V Tvj = 125C VGE = -15 V Erec 250 500 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 48,0 Temperatureunderswitchingconditions Tvj op -40 preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 2 51,0 K/kW K/kW 125 C /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV Partialdischargeextinctionvoltage RMS, f = 50 Hz, QPD typ 10 pC (acc. to IEC 1287) VISOL 5,1 kV DC DCstability Tvj = 25C, 100 fit VCE D 2150 V Materialofmodulebaseplate AlSiC Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) AlN Creepagedistance -/terminaltoheatsink -/terminaltoterminal 64,0 56,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 40,0 26,0 mm Comperativetrackingindex CTI > 600 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 16,0 LsCE 25 nH RCC'+EE' 0,37 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 4,25 - 5,75 Nm Terminalconnectiontorque M8 ScrewM8-Mountingaccordingtovalidapplicationnote M 8,0 - 10 Nm Weight G 500 g preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 3 max. K/kW /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 800 800 Tvj = 25C Tvj = 125C 700 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 667 600 533 IC [A] IC [A] 500 400 400 300 267 200 133 100 0 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=6.2,RGoff=13,VCE=1800V,CGE=100nF 800 3000 Tvj = 25C Tvj = 125C 700 Eon, Tvj = 125C Eoff, Tvj = 125C 2700 2400 600 2100 1800 E [mJ] IC [A] 500 400 1500 1200 300 900 200 600 100 0 300 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 4 0 100 200 300 400 IC [A] 500 600 700 800 /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=400A,VCE=1800V,CGE=100nF IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 4000 100 Eon, Tvj = 125C Eoff, Tvj = 125C 3600 ZthJC : IGBT 3200 2800 10 E [mJ] ZthJC [K/kW] 2400 2000 1600 1 1200 800 i: 1 2 3 4 ri[K/kW]: 11,475 6,375 1,53 6,12 i[s]: 0,03 0,1 0,3 1 400 0 0 5 10 15 20 25 RG [] 30 35 40 0,1 0,001 45 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=13,Tvj=125C,CGE=100nF 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1000 800 IC, Modul IC, Chip Tvj = 25C Tvj = 125C 700 800 600 500 IF [A] IC [A] 600 400 400 300 200 200 100 0 0 500 1000 1500 2000 VCE [V] 2500 3000 0 3500 preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 5 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 4,0 /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=6.2,VCE=1800V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=400A,VCE=1800V 800 600 Erec, Tvj = 125C Erec, Tvj = 125C 700 500 600 400 E [mJ] E [mJ] 500 400 300 300 200 200 100 100 0 0 100 200 300 400 IF [A] 500 600 700 0 800 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 5 10 15 20 RG [] 25 30 35 2500 3000 3500 ,(SOA) safeoperationareaDiode,Inverter(SOA) IR=f(VR) Tvj=125C 100 1000 ZthJC : Diode IR, Modul 800 10 IR [A] ZthJC [K/kW] 600 400 1 200 i: 1 2 3 4 ri[K/kW]: 22,95 12,75 3,06 12,24 i[s]: 0,03 0,1 0,3 1 0,1 0,001 0,01 0,1 t [s] 1 0 10 preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 6 0 500 1000 1500 2000 VR [V] /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData /circuit_diagram_headline /packageoutlines preparedby:KHH dateofpublication:2013-10-03 approvedby:TS revision:2.0 7 /TechnicalInformation IGBT- IGBT-modules FZ400R33KL2C_B5 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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