BCR16PM-12L Triac Medium Power Use REJ03G0306-0100 Rev.1.00 Aug.20.2004 Features * * * * * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 1500 V Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 14 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR16PM-12L Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2 t 106.5 A2 s PGM PG (AV) VGM IGM Tj Tstg -- Viso 5.0 0.5 10 2 - 40 to +125 - 40 to +125 2.0 1500 W W V A C C g V Symbol Min. Typ. Max. Unit IDRM VTM -- -- -- -- 2.0 1.5 mA V Tj = 125C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 71C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c -- -- -- 0.2 -- 10 -- -- -- -- -- -- 30Note5 30Note5 30Note5 -- 3.0 -- mA mA mA V C/W V/s Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage Tj = 125C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 20mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 8.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 14 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12L Performance Curves 103 7 5 3 2 102 7 5 3 2 Rated Surge On-State Current 200 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics Tj = 125C Tj = 25C 101 7 5 3 2 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A 100 7 5 3 2 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 3 of 14 Transient Thermal Impedance (C/W) Gate Voltage (V) 120 Conduction Time (Cycles at 60Hz) IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 140 On-State Voltage (V) 101 7 5 3 VGT = 1.5V 2 103 7 5 4 3 2 160 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 3 2 180 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR16PM-12L 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 120 100 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 160 Ambient Temperature (C) Case Temperature (C) 30 360 Conduction Resistive, 25 inductive loads RMS On-State Current (A) 140 All fins are black painted 140 aluminum and greased Natural convection 120 100 120 x 120 x t2.3 80 100 x 100 x t2.3 60 60 x 60 x t2.3 40 20 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 35 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (C) 40 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Rev.1.00, Aug.20.2004, page 4 of 14 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Transient Thermal Impedance (C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) BCR16PM-12L 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 T2+, G- Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 0 40 80 120 160 Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage Typical Example 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 140 160 Typical Example Tj = 125C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Gate Trigger Current vs. Gate Current Pulse Width 7 5 Typical Example Tj = 125C 3 IT = 4A 2 = 500s VD = 200V f = 3Hz 101 7 5 Minimum 100 7 0 10 Distribution Junction Temperature (C) 160 3 2 103 7 5 3 2 100 -40 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time I Quadrant Characteristics Value III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rev.1.00, Aug.20.2004, page 5 of 14 2 3 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (s) BCR16PM-12L Gate Trigger Characteristics Test Circuits 6 6 A 6V 330 A 6V V V Test Procedure I Test Procedure II 6 A 6V 330 V Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 14 330 BCR16PM-12L Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 3.2 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 14 Standard order code example BCR16PM-12LA BCR16PM-12LA-A8 BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) BCR16PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150C) Features * IT (RMS) : 16 A * VDRM : 600 V * IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 * Viso : 1500 V * Insulated Type * Planar Passivation Type Outline TO-220F 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devices Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 8 of 14 Symbol Voltage class 12 Unit VDRM VDSM 600 720 V V BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2 t 106.5 A2 s PGM PG (AV) VGM IGM Tj Tstg -- Viso 5.0 0.5 10 2 - 40 to +150 - 40 to +150 2.0 1500 W W V A C C g V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc = 96C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions IDRM VTM -- -- -- -- 2.0 1.5 mA V Tj = 150C, VDRM applied Repetitive peak off-state current On-state voltage Tc = 25C, ITM = 25 A, Instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT -- -- -- -- -- -- 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger currentNote2 IFGT IRGT IRGT -- -- -- -- -- -- 30Note5 30Note5 30Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.2/0.1 -- -- V Tj = 125C/150C, VD = 1/2 VDRM Thermal resistance Rth (j-c) -- -- 3.0 C/W Junction to caseNote3 Critical-rate of rise of off-state (dv/dt)c 10/1 -- -- V/s Tj = 125C/150C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 8.0 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 9 of 14 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) Performance Curves 103 7 5 3 2 Tj = 150C 101 7 5 3 2 Tj = 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 140 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V 10-1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) 160 On-State Voltage (V) 100 7 5 3 2 103 7 5 4 3 2 180 0 100 4.0 Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Voltage (V) 101 7 5 3 2 Surge On-State Current (A) 200 102 7 5 3 2 3 2 Rated Surge On-State Current 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (C) Rev.1.00, Aug.20.2004, page 10 of 14 Transient Thermal Impedance (C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) 103 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 On-State Power Dissipation (W) 40 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 35 30 360 Conduction Resistive, 25 inductive loads 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 All fins are black painted aluminum and greased 120 120 x 120 x t2.3 120 100 Curves apply regardless of conduction angle 80 60 40 360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 100 80 100 x 100 x t2.3 60 x 60 x t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 Ambient Temperature (C) 160 160 Ambient Temperature (C) Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Rev.1.00, Aug.20.2004, page 11 of 14 Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Case Temperature (C) Transient Thermal Impedance (C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 5 3 Typical Example 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140160 Junction Temperature (C) BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution T2+, G- Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2-, G- 100 -40 0 40 80 120 160 Junction Temperature (C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (C) 160 Typical Example Tj = 125C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C) Commutation Characteristics (Tj=125C) 160 Typical Example Tj = 150C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/s) Rev.1.00, Aug.20.2004, page 12 of 14 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) Holding Current vs. Junction Temperature 102 7 5 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 3 2 101 7 Minimum Characteristics 5 Value III Quadrant 3 2 100 7 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) Gate Trigger Current vs. Gate Current Pulse Width 102 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time 101 7 5 Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz I Quadrant III Quadrant 3 2 100 7 Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Commutation Characteristics (Tj=150C) Minimum Characteristics Value 3 5 7 101 2 3 5 7 102 2 3 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6 6 Load C1 A 6V 330 V Test Procedure I V Test Procedure II 6 A 6V V 330 Test Procedure III Rev.1.00, Aug.20.2004, page 13 of 14 R1 A 6V 330 C0 R0 C1 = 0.1 to 0.47F C0 = 0.1F R0 = 100 R1 = 47 to 100 BCR16PM-12L (The product guaranteed maximum junction temperature of 150C) Package Dimensions TO-220F EIAJ Package Code JEDEC Code Conforms Mass (g) (reference value) Lead Material 2.0 Cu alloy 10.5 max 2.8 17 8.5 5.0 1.2 5.2 3.6 3.2 0.2 13.5 min 1.3 max 0.8 0.5 2.54 2.6 Symbol 4.5 2.54 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Vinyl sack 100 Type name +B Lead form Plastic Magazine (Tube) 50 Type name +B - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 14 of 14 Standard order code example BCR16PM-12LB BCR16PM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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