IRF740,741 D84EQ2.Q1 10.0 AMPERES 400, 350 VOLTS RDS(ON) = 0.55 0 OW ER: MOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- \ ness and reliability. \ This design has been optimized to give superior performance G in most switching applications including: switching power ; s supplies, inverters, converters and solenoid/relay drivers. onGASE STYLE TO-220AB Also, the extended safe operating area with good linear 49411026) 212295) sooaeg transfer characteristics makes it well suited for many linear je se oR rota alfa" 2st applications such as audio amplifiers and servo motors. C ; 7a 7 7 - -265(6.73) . Features Fez) eueSASiune | t Se EoINT Polysilicon gate Improved stability and reliability sessing | tT Dea e No secondary breakdown Excellent ruggedness | } te + .130(3.3} 4 beg 3 . e Ultra-fast switching Independent of temperature 4 a iF fore TERM.1 5 ; . Voltage controlled High transconductance TERM2 05511.39) nme Low input capacitance Reduced drive requirement reams _ Z . .033(0.84) .105(2.67 _- -107(2.72) e Excellent thermal stability Ease of paralleling 0271068) el ates rm 082 24) oat E- D0 BS rst 38) UNIT TYPE |TERM.1{TERM.2| TERM. TAB POWER MOS FET /T0-220-AB] GATE |DRAIN|SQURCE| ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF740/D84EQ2 IRF741/D84EQ1 UNITS Drain-Source Voltage Vpss 400 350 Volts Drain-Gate Voltage, Res = 1MQ VpGR 400 350 Volts Continuous Drain Current @ To = 25C Ip 10 10 A @ Te = 100C 6 6 A Pulsed Drain Current lpm 40 40 A Gate-Source Voltage Vas +20 +200 Volts Total Power Dissipation @ Tc = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 W/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rguc 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 217electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF740/D84EQ2 | BVoss 400 _ Volts (Vgg = OV, Ip = 250 vA) IRF741/D84EQ1 350 _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Ves = OV, To = 26C) _ _ 250 uA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current (Vag = +20V) lass _ +500 nA on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Voits (Vos = Vas, |p = 250 vA) On-State Drain Current (Vas = 10V, Vps = 10V) Ip(on)y | 10 7 7 A Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 5A) RDS(ON) 0.48 0.55 Ohms Forward Transconductance (Vps = 10V, Ip = 5A) Ofs 3.2 4.5 mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 1400 1600 pF Output Capacitance Vos = 25V Coss _ 210 450 pF Reverse Transfer Capacitance f= 1 MHz Crss - 37 150 pF switching characteristics Turn-on Delay Time Vos = 175V td(on) _ 20 _ ns Rise Time Ip = 5A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time RGen = 500, Res = 12.50 | tavoft) _ 70 _ ns Fail Time (Res (EQuiv.) = 100) ty _ 30 _ ns i . 1 * source-drain diode ratings and characteristics Continuous Source Current Is _ _ 10 A Pulsed Source Current Ism _ _ 40 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 10A) sp 08 20 | Volts Reverse Recovery Time trr _ 420 _ ns (Ig = 10A, dig/dt = 100A/usec, To = 125C) Qrar 5.5 uC Pulse Test: Pulse width < 300 us, duty cycle = 2% 100 80 60 40 20 & 2M n OPERATION IN THIS AREA MAY BE LIMITED BY Rogion; Ip. DRAIN CURRENT (AMPERES) So 9oo> > amo SINGLE PULSE Tem 25C 0.1 2 4 6 610 20 40 60 80100 Vpg, DRAIN -~-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 218 Rosiony AND Vegi) NORMALIZED 2.4 CONDITIONS: Rpsion) CONDITIONS: Ip = 5.0A, Vgs = 10V V@s(TH) CONDITIONS: Ip = 250uA, Vos = Veg 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 VesitHy 0.6 0.4 0.2 0 40 0 40 80 Ty, JUNCTION TEMPERATURE (C) 120 160 TYPICAL NORMALIZED Rpgion; AND Vagiry VS. TEMP.