2N6294 2N6295
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6296 2N6297 UNITS
Collector-Base Voltage VCBO 60 80 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 4.0 A
Peak Collector Current ICM 8.0 A
Continuous Base Current IB 80 mA
Power Dissipation PD 50 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 3.5 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEO, VEB=1.5V 0.5 mA
ICEV V
CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA
ICEO V
CE=½Rated VCEO 0.5 mA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=50mA, (2N6294, 2N6296) 60 V
BVCEO I
C=50mA, (2N6295, 2N6297) 80 V
VCE(SAT) I
C=2.0A, IB=8.0mA 2.0 V
VCE(SAT) I
C=4.0A, IB=40mA 3.0 V
VBE(SAT) I
C=4.0A, IB=40mA 4.0 V
VBE(ON) V
CE=3.0V, IC=2.0A 2.8 V
hFE V
CE=3.0V, IC=2.0A 750 18K
hFE V
CE=3.0V, IC=4.0A 100
hfe V
CE=3.0V, IC=1.5A, f=1.0kHz 300
fT V
CE=3.0V, IC=1.5A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=100kHz (NPN types) 120 pF
Cob V
CB=10V, IE=0, f=100kHz (PNP types) 200 pF
2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6294, 2N6296
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and medium
speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R2 (2-September 2014)
www.centralsemi.com
2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
www.centralsemi.com
R2 (2-September 2014)
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