VS-30BQ040HM3
www.vishay.com Vishay Semiconductors
Revision: 18-Apr-2019 1Document Number: 94843
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High Performance Schottky Rectifier, 3.0 A
FEATURES
• Very low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ040HM3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VR40 V
VF at IF0.46 V
IRM 30 mA at 125 °C
TJ max. 150 °C
EAS 6.0 mJ
Package SMC (DO-214AB)
Circuit configuration Single
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 40 V
IFSM tp = 5 μs sine 1600 A
VF3.0 Apk, TJ = 125 °C 0.46 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ040HM3 UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 115 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 104 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
1600
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 12 mH 6.0 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A