2009. 6. 10 1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8550S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to MPS8050S.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-100μA, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V
DC Current Gain
hFE(1) VCE=-1V, IC=-5mA 45 170 -
hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300
hFE(3) VCE=-1V, IC=-800mA 40 80 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA --0.28 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA --0.98 -1.2 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA --0.66 -1.0 V
Transition Frequency fTVCE=-10V, IC=-50mA 100 200 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 15 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC-1.5 A
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : hFE(2) Classification B:85～160 , C : 120～200 , D : 160～300
* PC: Package Mounted On 99.5% Alumina (10×8×0.6㎜)
h Rank
Type Name
Marking
Lot No.
BJ
FE
2009. 6. 10 2/2
MPS8550S
Revision No : 2
f - I
C
COLLECTOR CURRENT I (mA)
-1 -3 -10 -100
T
TRANSITION FREQUENCY f (MHz)
10
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V
-0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-0.2
-0.3
-0.4
I =-4.0mA
B
TC
-300-30
30
50
100
300
V =-10V
CE
I =-3.5mA
B
I =-3.0mA
B
I =-2.5mA
B
I =-2.0mA
B
I =-0.5mA
B
100
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
0.1
10
1 1000100 10000
C
1000
FE
h - I
FE C
V =-1V
CE
-0.1
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
I - V
CBE
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.3
-1
-3
-10
-30
-100
-0.5
-5
-50
V =-1V
CE
-5 -50 -1 -5 -10 -50
100
10
1
5
50
f=1MHz
E
I =0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
ob CB
C (pF)
3
30
-3 -30
-0.5
I =-1.5mA
B
I =-1.0mA
B
C
COLLECTOR CURRENT I (A)
SATURATION VOLTAGE
BE(sat),
COLLECTOR CURRENT I (mA)
C
V V - I
BE(sat), CE(sat) C
V V (mV)
CE(sat)
0.1
1
10
1000
100
10000
1 10 100 1000 10000
B
I =10IB
C
V (sat)
CE
BE
V (sat)
