© 2004 IXYS All rights reserved
VCES = 900 V
IC25 = 75 A
VCE(sat) = 2.7 V
tfi typ = 200 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC = 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C50µA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = IC110, VGE = 15 V 2.2 2.7 V
TJ = 125°CV
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 900 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ900 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C50A
ICM TC= 25°C, 1 ms 200 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
DS99377(04/05)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
zHigh frequency IGBT
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zHigh power density
zVery fast switching speeds for high
frequency applications
HiPerFASTTM IGBT IXGH 50N90B2
IXGT 50N90B2
TO-268
(IXGT)
C (TAB)
C (TAB)
GCE
TO-247
(IXGH)
E
G
B2-Class High Speed IGBTs
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2
IXGT 50N90B2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC110 A; VCE = 10 V, 25 40 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2500 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 180 pF
Cres 75 pF
Qg135 nC
Qge IC = IC110 A, VGE = 15 V, VCE = 0.5 VCES 23 nC
Qgc 50 nC
td(on) 20 ns
tri 28 ns
td(off) 350 500 ns
tfi 200 ns
Eoff 4.7 7.5 mJ
td(on) 20 ns
tri 28 ns
Eon 0.7 mJ
td(off) 400 ns
tfi 420 ns
Eoff 8.7 mJ
RthJC 0.31 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Inductive load, TJ = 125°°
°°
°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
© 2004 IXYS All rights reserved
IXGH 50N90B2
IXGT 50N90B2
Fig. 2. Extended Output C haracteristics
@ 25
º
C
0
50
100
150
200
250
300
03691215
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
7V
9V
11V
13 V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
80
90
100
00.511.522.533.544.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
C E
- Volts
I
C
- Amperes
V
GE
=15V
13V
11V
9V
5V
7V
Fig. 4. Dependence of V
CE(sat)
on
Temperatur e
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalized
I
C
= 50A
I
C
= 25A
V
GE
= 15V I
C
= 100A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 6 7 8 9 10 11 12 13 14 15
V
G E
- Volts
V
C E
- Volts
T
J
= 25
º
C
I
C
= 100A
50A
25A
Fig. 6. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
3456789101112
V
G E
- Volts
I
C
- Amperes
T
J
= -40
º
C
25
º
C
125
º
C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2
IXGT 50N90B2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 7. Transcondu ctance
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125 150 175 200 225
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
5
10
15
20
25
30
35
40
0 30 6090120150
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 25A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 100A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
18
20
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 100A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V I
C
= 50A
I
C
= 25A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
300
400
500
600
700
800
900
1000
1100
1200
1300
5 101520253035404550
R
G
- Ohms
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
150
200
250
300
350
400
450
500
550
600
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
© 2004 IXYS All rights reserved
IXGH 50N90B2
IXGT 50N90B2
Fig. 14. Gate Charge
0
1.5
3
4.5
6
7.5
9
10.5
12
13.5
15
0 20 40 60 80 100 120 140
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 450V
I
C
= 50A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Switchi ng Time on Temperature
150
200
250
300
350
400
450
500
550
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
=
5 Ω
V
GE
=
15 V
V
CE
=
720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 16. Reverse-Bias Safe
Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
100 200 300 400 500 600 700 800 900
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 17. Maximum Transient Thermal Resistance
0.01
0.1
1
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
