BFR91A
Document Number 85031
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
1
3
2
E
B
C
3
1
2
19039
Electrostatic sensitive device.
Observe precautions for handling.
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 111 mg
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Part Ordering code Marking Remarks Package
BFR91A BFR91AGELB-GS08 BFR91A Packed in Bulk TO-50(3)
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 2V
Collector current IC50 mA
Total power dissipation Tamb ≤ 60 °C Ptot 300 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Symbol Value Unit
Junction ambient 1) RthJA 300 K/W
e3
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Document Number 85031
Rev. 1.4, 29-Apr-05
BFR91A
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter cut-off current VCE = 20 V, VBE = 0 ICES 100 μA
Collector-base cut-off current VCB = 20 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 12 V
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA hFE 40 90 150
Parameter Test condition Symbol Min Typ. Max Unit
Transition frequency VCE = 5 V, IC = 30 mA,
f = 500 MHz
fT6GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF
Collector-emitter capacitance VCB = 5 V, f = 1 MHz Cce 0.3 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 1.5 pF
Noise figure VCE = 8 V, ZS = 50 Ω,
f = 800 MHz, IC = 5 mA
F1.6dB
VCE = 8 V, ZS = 50 Ω,
f = 800 MHz, IC = 30 mA
F2.3dB
Power gain VCE = 8 V, IC = 30 mA,
ZS = 50 Ω, ZL = ZLopt,
f = 800 MHz
Gpe 14 dB
Linear output voltage - two tone
intermodulation test
VCE = 8 V, IC = 30 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MH, ZS = ZL = 50 Ω
V1 = V2280 mV
Third order intercept point VCE = 8 V, IC = 30 mA,
f = 800 MHz
IP332 dBm
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
8 2 100 0.92 -22.1 6.38 162.8 0.02 78.4 0.9 -8.1
300 0.78 -61.3 5.42 134.7 0.05 61.5 0.88 -20.8
500 0.64 -92.7 4.38 114.3 0.07 52.8 0.79 -28.2
800 0.51 -128.0 3.19 92.9 0.09 49.3 0.73 -35.9
1000 0.45 -146.3 2.65 82.3 0.10 50.4 0.71 -40.6
1200 0.41 -161.4 2.27 73.8 0.11 53.1 0.70 -45.1
1500 0.37 177.9 1.85 63.0 0.12 57.8 0.71 -52.3
1800 0.34 159.7 1.58 53.4 0.14 61.8 0.73 -60.0
2000 0.32 149.7 1.44 48.5 0.16 63.8 0.74 -64.9
8 5 100 0.79 -31.8 13.51 153.5 0.02 75.1 0.92 -13.4
BFR91A
Document Number 85031
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
3
300 0.54 -78.6 9.24 119.9 0.04 61.9 0.73 -26.4
500 0.40 -107.8 6.44 101.9 0.06 61.0 0.64 -31.1
800 0.30 -138.4 4.30 85.7 0.09 63.7 0.59 -36.3
1000 0.27 -153.8 3.50 77.8 0.10 65.0 0.58 -41.3
1200 0.25 -167.2 2.98 71.1 0.12 65.7 0.58 -45.8
1500 0.22 175.1 2.41 62.4 0.14 66.0 0.59 -53.2
1800 0.21 157.8 2.06 54.2 0.18 65.3 0.61 -60.6
2000 0.20 149.4 1.88 49.7 0.19 64.5 0.62 -65.5
8 10 100 0.63 -43.0 21.15 143.4 0.02 72.5 0.85 -18.5
300 0.35 -91.7 11.55 109.2 0.04 67.2 0.62 -28.0
500 0.25 -117.7 7.47 95.1 0.06 69.5 0.55 -30.6
800 0.20 -145.2 4.85 82.1 0.09 71.1 0.53 -36.4
1000 0.18 -160.0 3.93 75.5 0.11 71.1 0.52 -41.3
1200 0.17 -171.7 3.32 69.8 0.13 70.4 0.52 -45.9
1500 0.16 173.5 2.70 62.0 0.16 68.7 0.53 -53.7
1800 0.15 153.9 2.30 54.6 0.19 66.4 0.54 -61.4
2000 0.15 148.4 2.09 50.3 0.21 64.8 0.55 -66.5
8 20 100 0.44 -55.8 28.24 132.6 0.02 72.8 0.76 -22.3
300 0.22 -103.9 12.79 102.0 0.04 74.1 0.54 -26.5
500 0.16 -127.5 8.00 90.7 0.06 75.8 0.50 -28.6
800 0.14 -153.3 5.13 79.8 0.09 75.4 0.49 -35.2
1000 0.13 -165.9 4.15 73.9 0.11 74.2 0.48 -40.4
1200 0.12 -177.3 3.51 68.7 0.13 72.9 0.49 -45.5
1500 0.12 170.1 2.84 61.5 0.17 70.0 0.50 -53.6
1800 0.12 152.3 2.42 54.4 0.20 67.1 0.51 -61.6
2000 0.11 147.1 2.21 50.6 0.22 65.0 0.52 -66.7
8 30 100 0.34 -64.0 31.01 127.3 0.02 73.3 0.71 -23.3
300 0.17 -112.9 13.08 99.1 0.04 77.2 0.52 -24.9
500 0.14 -136.2 8.10 88.9 0.06 77.8 0.49 -27.3
800 0.13 -159.4 5.17 78.7 0.09 76.8 0.48 -34.3
1000 0.12 -171.4 4.18 73.0 0.11 75.3 0.48 -39.6
1200 0.12 178.6 3.53 68.0 0.13 73.6 0.48 -45.0
1500 0.12 165.7 2.87 61.1 0.17 70.5 0.49 -53.3
1800 0.11 147.8 2.44 54.2 0.20 67.4 0.50 -61.3
2000 0.11 143.7 2.23 50.3 0.22 65.4 0.51 -66.6
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
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Document Number 85031
Rev. 1.4, 29-Apr-05
BFR91A
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Transition Frequency vs. Collector Current
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
T
amb
- Ambient Temperature (°C)
12845
P - Total Power Dissipation ( mW )
tot
0
1000
2000
3000
4000
5000
6000
7000
I
C
- Collector Current ( mA )
12895
f - Transition Frequency ( MHz )
T
V
CE
=5V
f = 500 MHz
0 10 2030 4050
0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
V
CB
- Collector Base Voltage ( V )
12896
C - Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 4. Noise Figure vs. Collector Current
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 5 10 15 20 25 30
I
C
- Collector Current ( mA )
12897
F - Noise Figure ( dB )
V
CE
=8V
f = 800 MHz
Z
S
=50
BFR91A
Document Number 85031
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
5
VCE = 10 V, IC = 10 mA, Z0 = 50 Ω
S11
S21
S12
S22
Figure 5. Input Reflection Coefficient
Figure 6. Forward Transmission Coefficient
∞
13 518
-j0.2
-j0.5
-j
-j2
-j5
0
j0.2
j0.5
j
j2
j5
0.2 1 2 5
2.0 GHz
1.0
0.1
0.3
13 520
0°
90°
180°
-90°
20 40
-150°
-120°-60°
-30°
120°
150°
60°
30°
2.0 GHz
0.1
0.3
Figure 7. Reverse Transmission Coefficient
Figure 8. Output Reflection Coefficient
13 519
0°
90°
180°
-90°
0.08 0.16
-150°
-120°-60°
-30°
120°
150°
60 °
30 °
2.0 GHz
0.5
1.0
0.1
1.5
∞
13 521
-j0.2
-j0.5
-j
-j2
-j5
0
j0.2
j0.5
j
j2
j5
0.2 0.5 1 2 5
2.0 GHz
1.0 0.1
0.3
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Document Number 85031
Rev. 1.4, 29-Apr-05
BFR91A
Vishay Semiconductors
Package Dimensions in mm
96 12244
BFR91A
Document Number 85031
Rev. 1.4, 29-Apr-05
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
