Prepared Ref No. Product Specifications Checked AN17831A Approved A-1 Total Page 9 Page No. 1 Structure Silicon Monolithic Bipolar IC Appearance SIL-12 Pins Plastic Package (FP-12S Power Type With Fin) Application Audio Function 44W (6 ) x 2ch BTL Power Amplifier Built-in Standby and Muting Features Incorporating Various Protection Circuits Absolute Maximum Ratings A No. Item Symbol Ratings Unit Note 1 Storage Temperature Tstg -55 ~ +150 C 2 Operating Ambient Temperature Topr -25 ~ +75 C 3 Operating Ambient Pressure Popr 1.013x105 0.61x105 Pa 4 Operating Constant Acceleration Gopr 9,810 m/s 2 5 Operating Shock Sopr 4,900 m/s 2 6 Power Supply Voltage Vcc 27 V 7 Power Supply Current Icc 8.0 A 8 Power Dissipation PD 37.5 W Operating Supply Voltage Range Vcc 1 2 8.0 V ~ 24.0 V Note: 1) Without input signal, Vcc is up to 27V 2) Ta = 75C with infinite heatsink Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. Product Specifications Checked AN17831A Approved B-1 Total Page 9 Page No. 2 Electrical Characteristics < Vcc = 12V, RL = 4, freq. = 1 kHz, 2 Channel Outputs > (Unless otherwise specified, the ambient temperature is 25C2C) B No. Symbol Test Cct. Item Condition Limit Unit Note Min Typ Max - 150 300 mA Vin=0mV, Rg=20k - 0.27 0.5 mVrms 1 Vin=20mV 38 40 42 dB THD 1 Vin=20mV - 0.07 0.4 % Maximum Output Power 1 Po1 1 THD=10% 12 15 - W 6 Maximum Output Power 2 Po2 1 VCC=24V, RL=6, THD=10% 30 44 - W 7 Channel Balance CB 1 Vin=20mV -1 0 1 dB 8 Channel Crosstalk CT 1 Vin=20mV, Rg =20k 55 70 - dB 9 Output Offset Voltage Voff 1 Rg=20k -350 0 350 mV 10 Ripple Rejection RR 1 Vr=1Vrms, fr=120Hz, Rg=20k 50 60 - dB 11 Standby Current I STB 1 Vin=0mV - 1 10 A 12 Muting Effects MT 1 Vin=20mV 70 80 - dB 1 Quiescent Circuit Current Icq 1 2 Output Noise Voltage Vno 1 3 Voltage Gain Gvc 4 Total Harmonic Distortion 5 Vin=0mV 1 2 2 1 2 Note : 1) With a filter band 20Hz ~20kHz (12 dB/OCT) used. 2) With a filter band 400Hz ~30kHz used. Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. Product Specifications Checked AN17831A Approved C-1 Total Page 9 Page No. 3 Description of Test Circuits and Test Methods [Test Circuit 1] AN17831A 1 Vcc 2 3 + 2200 4 5 + 10 6 Vout1 51k RL 4 20k 7 8 33 9 10 + 8.2k 11 12 Vout2 RL 4 20k STB ON MUTE OFF OFF Vin1 5V ON Vin2 3V Note : * STB 'OFF' means 5V. MUTE 'OFF' means 0V. Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. Product Specifications Checked AN17831A Approved D-1 Total Page 9 Page No. 4 Circuit Function Block Diagram - - REF - + + + + Protection Circuit Thermal Shutdown Load Short Vcc Short Ground Short ASO Protect + + - Standby Circuit 1 2 3 4 MUTE 5 6 7 8 9 10 11 12 Pin Descriptions Pin No. 1 2 3 4 5 6 Eff. Date Pin Descriptions Vcc Ch1 +ve Phase Output Ch1 Output GND Ch1 -ve Phase Output Standby Ch1 Input Eff. Date Eff. Date Pin No. 7 8 9 10 11 12 Pin Descriptions Pre GND Ch2 Input Mute Ch2 -ve Phase Output Ch2 Output GND Ch2 +ve Phase Output Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Product Specifications Checked AN17831A Approved Package Name Ref No. E Total Page 9 Page No. 5 FP-12S Unit : mm 6.4 0.3 7.7 0.3 7.8 0.3 29.6 0.3 3.5 0.3 1.2 0.1 +0.1 0.25 -0.05 1 2.54 0.6 R1.8 0.6 0.1 20.00.1 28.0 0.3 29.96 0.3 12 3.6 Name of item Date Code Company insignia Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Product Specifications Checked AN17831A Approved Ref No. F-1 Total Page 9 Page No. 6 (Structure Description) Chip surface passivation SiN, PSG, Others ( ) 1 Lead frame material Fe group, Cu group, Others ( ) 2 , 6 Inner lead surface process Ag plating, Au plating, Others ( ) 2 Outer lead surface process Solder plating, Solder dip, Others ( ) 6 Chip mounting method Ag paste, Au-Si alloy, Solder, Others ( ) 3 Wire bonding method Thermalsonic bonding, Others ( ) 4 Mold material Epoxy, Others ( ) 4 Molding method Transfer mold, Multiplunger mold, Others ( ) 5 Fin material Cu Group Others ( ) 5 Package FP-12S 1 4 5 6 3 2 Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. Product Specifications Checked AN17831A Approved G-1 Total Page 9 Page No. 7 Application Circuit VCC 12V Input GND 7 2200 VCC 1 OUT1 40dB 2 Output1 GND 6 IN 1 3 40dB 51k 4 OUT1 5 STB 10 RL 4 STB Vref MUTE 8.2k 9 MUTE 33 40dB OUT2 10 Output2 GND 11 8 IN 2 40dB RL 4 12 OUT2 STB 'OFF' STB 'ON' Mute 'OFF' Mute 'ON' Eff. Date Eff. Date 5V 0V 0V 3V Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Product Specifications Checked AN17831A Approved Ref No. G-2 Total Page 9 Page No. 8 PD - Ta Curves (1) Tc = Ta, 62.5W ( j-c = 2 C/W ) (2) 20.83W ( f = 4.0 C/W ) With a 100cm 2X 3mm Al heat sink (black colour coated) or a 200cm 2X 2mm Al heat sink (not lacquered) (3) 15.63W ( f = 6.0 C/W ) 2 With a 100cm X 2mm Al heat sink (not lacquered) (4) 3.0W at Ta = 25C ( j-a = 42C/W ) Without heat sink 80 70 62.5W Power Dissipation PD ( W ) 60 (1) 50 40 30 20.8W 20 (2) 15.6W (3) 10 3.0W (4) 0 0 25 50 75 100 125 150 Ambient Temperature Ta ( C ) Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev. 1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Product Specifications Checked AN17831A Approved Ref No. H-1 Total Page 9 Page No. 9 (Precautions for use) 1) Be sure to attach a heat sink to the IC before use. Make sure that the heat sink is secured to the chassis. 2) Ground the radiation fin so that there will be no difference in electric potential between the radiation fin and ground. 3) The thermal protection circuit operates at a Tj of approximately 150C. The thermal protection circuit is reset automatically when the temperature drops. 4) The overvoltage protection circuit operates at a Vcc of approximately 28V. 5) Use a stabilised power supply with a 3V or higher standby voltage. Eff. Date Eff. Date Eff. Date Eff. Date 18-FEB-2002 FMSC-PSDA-002-01 Rev1. Semiconductor Company, Matsushita Electric Industrial Co., Ltd.