ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS(on)=0.16 ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * DPAK package G S Applications * DC-DC converters * Power management functions * Disconnect switches * Motor control * Class D audio output stages Ordering information Device Pinout - Top view Reel size (inches) Tape width (mm) Quantity per reel 13 12 4,000 ZXMP7A17KTC Device marking ZXMP 7A17 Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXMP7A17K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS -70 V Gate-source voltage VGS 20 V ID -5.7 A Continuous drain current @ VGS=10V; TA=25C (b) @ VGS=10V; TA=25C (b) -4.6 @ VGS=10V; TA=25C (a) -3.8 IDM -17.7 A IS -9.2 A Pulsed source current (body diode) (c) ISM -17.7 A Power dissipation at TA =25C (a) Linear derating factor PD 4.17 33.3 W mW/C Power dissipation at TA =25C (b) Linear derating factor PD 9.25 74 W mW/C Power dissipation at TA =25C (d) Linear derating factor PD 2.11 16.8 W mW/C Tj, Tstg -55 to +150 C Symbol Limit Unit Junction to ambient (a) RJA 30 C/W Junction to ambient (b) RJA 13.5 C/W Junction to ambient (c) RJA 59.1 C/W Pulsed drain current (c) Continuous source current (body diode) (b) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXMP7A17K Characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXMP7A17K ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS -70 Zero gate voltage drain current IDSS Gate-body leakage IGSS Typ. Max. Unit Conditions Static Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) V ID= -250A, VGS=0V -1 A VDS= -70V, VGS=0V 100 nA VGS=20V, VDS=0V -1.0 V ID= -250A, VDS=VGS 0.16 VGS= -10V, ID= -2.1A 0.25 VGS= -4.5V, ID = -1.7A 4.4 S VDS= -15V, ID= -2.1A RDS(on) Forward transconductance(*)() gfs Dynamic() Input capacitance Ciss 635 pF Output capacitance Coss 52 pF Reverse transfer capacitance Crss 42.5 pF Turn-on-delay time td(on) 2.5 ns Rise time tr 3.4 ns Turn-off delay time td(off) 27.9 ns Fall time tf 8 ns Total gate charge Qg 9.6 nC Total gate charge Qg 18 nC Gate-source charge Qgs 1.77 nC Gate drain charge Qgd 3.66 nC Diode forward voltage(*) VSD -0.85 Reverse recovery time() trr Reverse recovery charge() Qrr VDS= -40V, VGS=0V f=1MHz Switching () () VDD= -35V, ID= -1A RG6.0, VGS= -10V VDS= -35V, VGS= -5V ID= -2.1A VDS= -35V, VGS= -10V ID= -2.1A Source-drain diode -0.95 V Tj=25C, IS= -2.0A, VGS=0V 29.8 ns 38.5 nC Tj=25C, IS= -2.1A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXMP7A17K Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXMP7A17K Typical characteristics Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com ZXMP7A17K Intentionally left blank Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com ZXMP7A17K Package outline - DPAK DIM A A1 b b2 b3 c c2 D D1 E E1 Inches Min Max 0.086 0.094 0.005 0.020 0.035 0.030 0.045 0.205 0.215 0.018 0.024 0.018 0.023 0.213 0.245 0.205 0.250 0.265 0.170 - Millimeters Min Max 2.18 2.39 0.127 0.508 0.89 0.762 1.14 5.21 5.46 0.457 0.61 0.457 0.584 5.41 6.22 5.21 6.35 6.73 4.32 - DIM e H L L1 L2 L3 L4 L5 1 - Inches Min Max 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.065 0.025 0.040 0.045 0.060 0 10 0 15 - Millimeters Min Max 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.508 BSC 0.89 1.65 0.635 1.016 1.14 1.52 0 10 0 15 - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com