IAUC120N04S6N010
OptiMOS™- 6 Power-Transistor
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C, VGS=10V 120 A
TC=25°C, VGS=10V2,3) 150
TC=100°C, VGS=10V2) 120
Pulsed drain current2) ID,pulse TC=25 °C 480
Avalanche energy, single pulse2) EAS ID=60A, RG,min=25W400 mJ
Avalanche current, single pulse
IAS RG,min=25W60 A
Gate source voltage
VGS -±20 V
Power dissipation
Ptot TC=25°C 150 W
Operating and storage temperature
Tj, Tstg - -55 ... +175 °C
Value
VDS
40
V
RDS(on),max
1.0
mW
120
A
Product Summary
Type
Package
Marking
IAUC120N04S6N010
PG-TDSON-8
6N04N010
1
1
PG-TDSON-8
Rev. 1.0 page 1 2019-04-01
IAUC120N04S6N010
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case
RthJC - - - 1.0 K/W
Thermal resistance, junction -
ambient
RthJA 6 cm2 cooling area4) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0V, ID= 1mA 40 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=90µA 2.2 2.6 3.0
Zero gate voltage drain current
IDSS
VDS=40V, VGS=0V,
Tj=25°C
- - 1 µA
VDS=40V, VGS=0V,
Tj=125°C2)
- - 25
Gate-source leakage current
IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=7V, ID=60A -0.93 1.3 mW
VGS=10V, ID=60A -0.81 1.03
Values
Rev. 1.0 page 2 2019-04-01
IAUC120N04S6N010
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics2)
Input capacitance
Ciss -5291 6878 pF
Output capacitance
Coss -1602 2082
Reverse transfer capacitance
Crss -65 97
Turn-on delay time
td(on) - 9 - ns
Rise time
tr- 5 -
Turn-off delay time
td(off) -22 -
Fall time
tf-11 -
Gate Charge Characteristics2)
Gate to source charge
Qgs -22 29 nC
Gate to drain charge
Qgd -16 24
Gate charge total
Qg-81 108
Gate plateau voltage
Vplateau -4.2 - V
Reverse Diode
Diode continous forward current2) IS- - 120 A
Diode pulse current2) IS,pulse - - 480
Diode forward voltage
VSD
VGS=0V, IF=60A,
Tj=25°C
-0.8 1.1 V
Reverse recovery time2) trr
VR=20V, IF=50A,
diF/dt=100A/µs
-57 -ns
Reverse recovery charge2) Qrr -64 -nC
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by package; with an RthJC = 1K/W the chip is able to carry 284 A at 25°C.
TC=25°C
2) The parameter is not subject to production test- verified by design/characterization.
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=120A, RG=3.5W
VDD=32V, ID=120A,
VGS=0 to 10V
3) The product can operate at a current of ID=150A for a limited period of time up to t=100h at Tc=25 °C
Rev. 1.0 page 3 2019-04-01
IAUC120N04S6N010
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS = 10 V ID = f(TC); VGS = 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
1 µs
10 µs
100 µs
150 µs
1
10
100
1000
0.1 1 10 100
ID[A]
VDS [V]
0
50
100
150
050 100 150 200
Ptot [W]
TC[°C]
0
20
40
60
80
100
120
140
050 100 150 200
ID[A]
TC[°C]
Rev. 1.0 page 4 2019-04-01
IAUC120N04S6N010
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = f(ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 50 A; VGS = 10 V
parameter: Tj
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
5 V
10 V
0
100
200
300
400
500
600
700
800
900
1000
01234567
ID[A]
VDS [V]
4.5 V
5.5 V
7 V
5 V
10 V
0
2
4
050 100 150 200 250 300 350 400
RDS(on) [mW]
ID[A]
0
100
200
300
400
500
600
700
800
900
1000
2.5 3 3.5 4 4.5 5 5.5
ID[A]
VGS [V]
4.5 V
7 V
5.5 V
-55°C
25°C
175°C
Rev. 1.0 page 5 2019-04-01
IAUC120N04S6N010
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
90 µA
900 µA
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
102
103
104
010 20 30
C[pF]
VDS [V]
101
25 °C
100 °C
150 °C
1
10
100
110 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2
IF[A]
VSD [V]
Rev. 1.0 page 6 2019-04-01
IAUC120N04S6N010
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 40 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
38
40
42
44
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
8 V
32 V
0
1
2
3
4
5
6
7
8
9
10
020 40 60 80
VGS [V]
Qgate [nC]
60 A
30 A
15 A
0
200
400
600
800
1000
1200
1400
1600
1800
2000
25 75 125 175
EAS [mJ]
Tj[°C]
Rev. 1.0 page 7 2019-04-01
IAUC120N04S6N010
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2019-04-01
IAUC120N04S6N010
Revision History
Version
Date
Changes
Rev. 1.0 page 9 2019-04-01