BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
PRODUCT INFORMATION
1
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDW83, BDW83A, BDW83B, BDW83C and
BDW83D
●125 W at 25°C Case Temperature
●15 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.MDTRAAA
B
C
E
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
VCBO
-45
-60
-80
-100
-120
V
Collector-emitter voltage (IB = 0) (see Note 1)
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
VCEO
-45
-60
-80
-100
-120
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-15 A
Continuous base current IB-0.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Unclamped inductive load energy (see Note 4) ½LIC2100 mJ
Operating junction temperature range Tj-65 to +150 °C
Operating temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
OBSOLETE
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
2
PRODUCT INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO Collector-emitter
breakdown voltage IC = -30 mA IB = 0(see Note 5)
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
-45
-60
-80
-100
-120
V
ICEO Collector-emitter
cut-off current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
IB=0
IB=0
IB=0
IB=0
IB=0
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
-1
-1
-1
-1
-1
mA
ICBO Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
BDW84B
BDW84C
BDW84D
-0.5
-0.5
-0.5
-0.5
-0.5
-5
-5
-5
-5
-5
mA
IEBO Emitter cut-off
current VEB = -5 V IC=0 -2 mA
hFE Forward current
transfer ratio VCE = -3 V
VCE = -3 V IC= -6 A
IC=-15 A (see Notes 5 and 6) 750
100 20000
VBE(on) Base-emitter
voltage VCE = -3 V IC= -6 A (see Notes 5 and 6) -2.5 V
VCE(sat) Collector-emitter
saturation voltage IB = -12 mA
IB = -150 mA IC= -6 A
IC=-15 A (see Notes 5 and 6) -2.5
-4 V
VEC Parallel diode
forward voltage IE = -15 A IB = 0 -3.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1°C/W
RθJA Junction to free air thermal resistance 35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Turn-on time IC = -10 A
VBE(off) = 4.2 V IB(on) = -40 mA
RL = 3 ΩIB(off) = 40 mA
tp = 20 µs, dc ≤ 2% 0.9 µs
toff Turn-off time 7µs
OBSOLETE
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
3
PRODUCT INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
hFE - Typical DC Current Gain
100
1000
10000 TCS145AG
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
0
TCS145AH
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -20-1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·0
-1·5
-0·5
0
TCS145AI
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
4
PRODUCT INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1 -10 -100 -1000
IC - Collector Current - A
-0.1
-1
-10
-100
BDW84D
BDW84C
BDW84B
BDW84A
BDW84
OBSOLETE
BDW84, BDW84A, BDW84B, BDW84C, BDW84D
PNP SILICON POWER DARLINGTONS
5
PRODUCT INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX. 16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0 3,95
4,15
1 2 3
NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
ø
OBSOLETE
