BC847PN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package SOT-363 Available in Lead Free/RoHS Compliant Version (Note 2) A C1 Mechanical Data E2 B C * * Case: SOT-363 * * * Moisture Sensitivity: Level 1 per J-STD-020C * * * * B2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 E1 B1 C2 G H Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 3 K M J D Terminal Connections: See Diagram F L Marking (See Page 3): K7P @ TA = 25C unless otherwise specified 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 3/4 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 8 Total Device Value Unit 200 mW RqJA 625 C/W Tj, TSTG -65 to +150 C @ TA = 25C unless otherwise specified Characteristic B Pd Thermal Resistance, Junction to Ambient (Note 1) Maximum Ratings 0.30 Symbol Power Dissipation (Note 1) Operating and Storage Temperature Range Max 0.10 All Dimensions in mm Weight: 0.006 grams (approx.) Characteristic Min A a Ordering & Date Code Information: See Page 3 Maximum Ratings Dim NPN BC847B Section Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6.0 V IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Collector Current Maximum Ratings @ TA = 25C unless otherwise specified Characteristic PNP BC857B Section Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Collector Current Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30278 Rev. 5 - 2 1 of 4 www.diodes.com BC847PN a Diodes Incorporated Electrical Characteristics NPN BC847B Section @ TA = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 3) V(BR)CBO 50 -- -- V Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO 6 -- -- V IE = 1mA, IC = 0 hFE 200 290 450 -- VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) -- 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) -- 700 900 -- mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) 580 -- 660 -- 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA ICBO ICBO -- -- -- -- 15 5.0 nA A VCB = 30V VCB = 30V, TA = 150C fT 100 300 -- MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO -- 3.5 6.0 pF VCB = 10V, f = 1.0MHz dB VCE = 5V, IC = 200A, RG = 2.0kW, f = 1.0kHz, Df = 200Hz DC Current Gain (Note 3) Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure NF Electrical Characteristics -- 2.0 IC = 10mA, IB = 0 PNP BC857B Section @ TA = 25C unless otherwise specified Characteristic 10 Test Condition Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 3) V(BR)CBO -50 -- -- V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 -- -- V IE = 1mA, IC = 0 hFE 220 290 475 -- VCE = 5.0V, IC = 2.0mA -300 -650 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA DC Current Gain (Note 3) Test Condition Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) -- -75 -250 Base-Emitter Saturation Voltage (Note 3) VBE(SAT) -- -700 -850 -- -950 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 -- -650 -- -750 -820 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICBO ICBO -- -- -- -- -15 -4.0 nA A VCB = 30V VCB = 30V, TA = 150C fT 100 200 -- MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO -- 3 4.5 pF VCB = 10V, f = 1.0MHz dB VCE = 5V, IC = 200A, RG = 2.0kW, f = 1.0kHz, Df = 200Hz Collector-Cutoff Current (Note 3) Gain Bandwidth Product Collector-Base Capacitance Noise Figure NF Ordering Information -- -- 10 (Note 4) Device Packaging Shipping BC847PN-7 SOT-363 3000/Tape & Reel Notes: 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC847PN-7-F. DS30278 Rev. 5 - 2 2 of 4 www.diodes.com BC847PN Marking Information YM K7P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K7P Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 250 1000 VCE = 5V 100C hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 TA = 25C 100 -50C 10 50 1 0 0 100 200 0.01 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve (Total Device) 1000 IC / IB = 20 0.4 0.3 0.2 TA = 100C 0.1 25C -50C 1.0 10 100 TA = 25C VCE = 10V 5V 2V 100 0.1 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current (BC847B) DS30278 Rev. 5 - 2 10 10 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current (BC847B) fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR SATURATION VOLTAGE (V) 0.5 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current (BC847B) 3 of 4 www.diodes.com BC847PN 1000 IC IB = 10 0.4 0.3 TA = 25C TA = 150C 0.2 0.1 TA = -50C hFE, DC CURRENT GAIN (NORMALIZED) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.5 TA = 150C 100 VCE = 5V TA = 25C TA = -50C 10 0 0.1 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Collector Emitter Saturation Voltage vs. Collector Current (BC857B) 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, DC Current Gain vs. Collector Current (BC857B) ft, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current (BC857B) DS30278 Rev. 5 - 2 4 of 4 www.diodes.com BC847PN