International HEXFET Power MOSFETs ToaR Rectifier v be BR}DSS D Drain-to-Source Rpsjon) Continuous Mapa oO Pp Fax : Breckdown On-State Drain Current Max. Thermal Max. Power on Case | Part Voltage Resistance 25C roo" Resistance Dissipation Demand Outline}: Number (V) (Q (a) (A) cow) (Wy Through-Hole Packages TO-220AB N-Channel [RFZ24N 55 0.07 17 12 33 45 91354 HIS IRFZ34N 55 0.04 26 18 27 56 91276 IRFZ44N 55 0.024 dt 29 1.8 83 91303 IRFZ46N aS 0.02 46 33 LL? 8& 91277 IRFZ48N 55 0.016 53 37 16 o4 91406 IRFIOLON 55 0.012 72 51 12 130 91278 IRF3205 35 0.008 98 49 1.0 150 91279 IRFZ34E 60 0.042 28 20 2.2 68 9ta72 IRFZ44E 60 0.023 48 34 1d 110 91671 IRFIOIOE 60 O02 81 57 0.90 170 91670 IRF2807 75 0.013 7 50 1.0 156 91517 IRFS20N 100 0.20 9.5 6.7 9.5 47 91339 IRF530N 100 0.14 15 i 24 a0) 91351 IRF540N 106 9.052 27 19 1.6 od 91341 IRFI310N foe 0.036 36 25 1.3 120 S161 IRF3710 100 0.028 46 33 1.0 180 91309 IRF3315 150 0.082 21 15 1.6 94 91623 IRF3415 150 3,042 37 26 1.0 130 gt477 IRFBC20 600 44 2.2 id 2.5 50 90623 IRFBC30 600 2.2 3.6 2.3 17 74 90482 IRFBC40 600 1.2 6.2 3.9 1.0 125 90506 IRFBE20 800 65 Ls 1.2 2.3 54 90610 IRFBE30 800 3.0 4 2.6 20 125 90613 ** Vot rated Nie HEXDIP |-Pak : TO-220AB TO-220 FullPak Hlustrations not to scale