2SA1204
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
Audio Frequency Amplifier Applications
• High DC current gain: hFE = 100 to 320
• Suitable for output stage of 1 watts amplifier
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC2884
Maximum Ra tings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −35 V
Collector-emitter voltage VCEO −30 V
Emitter-base voltage VEBO −5 V
Collector current IC −800 mA
Base current IB −160 mA
PC 500
Collector power dissipation PC
(Note 1)
1000
mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
PW-MINI
JEDEC ―
JEITA SC-62
TOSHIBA 2-5K1A
Weight: 0.05 g (typ.)
2SA1204
2004-07-07
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = −35 V, IE = 0 ― ― −0.1 µA
Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −0.1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −30 ― ― V
hFE (1)
(Note 2)
VCE = −1 V, IC = −100 mA 100 ― 320
DC current gain
hFE (2) V
CE = −1 V, IC = −700 mA 35 ― ―
Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −20 mA ― ― −0.7 V
Base-emitter voltage VBE VCE = −1 V, IC = −10 mA −0.5 ― −0.8 V
Transition frequency fT VCE = −5 V, IC = −10 mA ― 120 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 19 ― pF
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
R
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
2SA1204
2004-07-07
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PC – Ta
Collector power dissipation PC (W)
Collector current IC (mA)
IC – VBE
VCE (sat) – IC
hFE – IC
IC – VCE
Collector current IC (mA)
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
DC current gain hFE
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Base-emitter voltage VBE (V)
Safe Operating Area
Collector current IC (mA)
Ambient temperature Ta (°C)
0 −8 −4 −2
0
−400
−800
Common emitter
Ta = 25°C
−600
−6
−200 IB = −1 mA
−8
0
−7
−5
−4
−3
−2
−6 Common emitter
VCE = −1 V
−1
500
−30 −1000 −10
100
10
−100 −300
300
1000
Ta = 100°C
25
−25
50
30
−3
0 −1.6 −0.8−0.4
0
−400
−800
Common emitter
VCE = −1 V
−600
−1.2
−200
−2.0
Ta = 100°C
25
−25
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−0.1 −3 −0.3 −30 −100
−3
−30
−10
−100
−5
−50
IC max (pulse)*
IC max (continuous)
100 ms*
1 ms*
10 ms*
VCEO max
−10 −1
−300
−3000
−1000
−500
Ta = 25°C
DC operation
0
0
0.6
0.2
0.8
0.4
1.2
1.0
120 80 100 40 6020 140 160
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
(1)
(2)
−1
−0.5
−30 −1000−10
−0.1
−0.01
−100 −300
−0.3
−1
−0.05
−0.03
−3
Ta = 100°C
25
−25
Common emitter
IC/IB = 25
2SA1204
2004-07-07
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
