MOSPOWER Selector Guide MOSPOWER Selector Guide, (Continued) N-Channel MOSPOWER R (Continued) Breakdown - Ip Power Patt Device Voltage (ones) Continuous Dissipution N oD (Volts) (Ohms (Amps) (Watts) umber 200 0.18 18.0 125 IRF640 200 0.22 16.0 125 IRF642 200 0.4 9.0 75 IRF630 200 0.6 8.0 75 IRF632 200 0.8 5.0 40 IRF620 200 1.2 4.0 40 IRF622 170 6.0 1.4 20 VN1706D 150 0.18 18.0 125 IRF641 150 0.22 16.0 125 IRF643 150 0.4 9.0 75 IRF631 150 0.6 8.0 75 IRF633 150 0.8 5.0 40 IRF621 150 1.2 4.0 40 IRF623 120 0.18 14.0 75 VN1200D 120 0.25 12.0 75 VN12Q1D 120 6.0 1.4 20 VN1206D 100 0.085 27.0 125 IRF540 100 0.11 24.0 125 IRF542 100 0.18 14.0 75 VN1000D 100 0.18 14.0 75 IRF530 100 0.25 12.0 75 VN1001D 100 0.25 12.0 75 IRF532 . 100 0.30 8.0 40 IRF520 TO-220AB 100 0.40 7.0 40 iIRF522 80 0.18 14.0 75 VNO800D 80 0.25 12.0 75 VNO0801D 80 4.0 1.7 20 VN88AD 80 4.5 1.6 20 VN89AD 60 0.085 27.0 125 IRF541 60 0.11 24.0 125 IRF543 60 0.12 18.0 75 VNO600D 60 0.15 16.0 75 VNO601D 60 0.18 14.0 75 IRF531 60 0.25 12.0 75 IRF533 60 0.30 8.0 40 IRF521 60 0.40 7.0 40 IRF523 60 3.0 1.9 20 VN66AD 60 3.5 1.8 20 VN67AD 40 0.12 18.0 75 VNO400D 40 0.15 16.0 75 VNO401D 40 3.0 1.9 20 VN46AD 40 5.0 1.5 20 VN40AD 30 1.2 2.5 20 VNO300D 80 4.0 1.5 15 VN88AF 80 45 1.4 15 VN89AF 80 5.0 1.3 15 VNS80AF 60 3.0 1.7 15 " VNBG6AF 60 3.5 1.6 15 *NNG7TAF A 40 3.0 16 15 VN46AF. TO-202A 40 5.0 1.3 15 VN40AF 240 6.0 0.8 6.25 VN2406B 170 6.0 0.8 6.25 VN1706B 120 6.0 0.8 6.25 VN1206B 100 0.3 6.0 20 IRFF120 100 0.4 5.0 20 IRFF122 90 4.0 0.9 6.25 2N6661 90 45 0.9 6.25 VNI9SAB 90 5.0 0.8 6.25 VNS0AB 60 0.3 6.0 20 IRFF121 + 60 0.4 5.0 20 IRFF123 0-38 60 3.0 1.1 6.25 2N6660 60 3.5 1.0 6.25 VN67AB 35 1.8 1.4 6.25 2N6659 _35 25 412 6.25 VN35AB Siliconix23 O a2 A q st bbe iin O< Of a =~ ~~ = bbe Lin = IRF IDE 40 IRF540 | 400V Low On Resistance No Second Breakdown High Input Impedance Internal Drain-Source Diode Very Rugged: Excellent SOA Extremely Fast Switching BENEFITS Reduced Component Count Improved Performance Simpler Designs improved Reliability IRF140 = IRF144 = IRF142 IRF143 IRF540 = IRF5441 = IRF542 # IRF543 N-Channel Enhancement-Mode MOSPOWER These power FETs are designed especially for switching regulators, solenoid drivers, relay drivers and audio amplifiers. FEATURES Bs Siliconix Advance Information converters, Product Summary Part : Number BVoss "ps(on) Ip Package IRF140 100V 0.0852 | 27A IRF 141 60V TO-3 IRF142 100V 0.110 |] 244 iRF143. | . 60V IRF540 400V 0.0850 | 27A IRF541 80V TO-220AB IRF542 100V O110 | 244 IRF543 60V _ Pulsed? Drain-Gate Voltage IRF 140, 142, 540, 542 IRF 141, 143, 541, 543 Drain Current Continuous {RF140, 141, 540, 541 IRF 142, 143, 542, 543 Operating and Storage Temperature Notes: 1. Limited by package dissipation. 2. Pulse test -80us to 300us, 1% duty cycle. ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF 140, 142, 540, 542 IRF 141, 143, 41, 543 Gate Current (Peak) ... 20... eee eee eee + 3A Gate-Source Voltage .........-.. 66. c cece eee dees +40V Total Power Dissipation ............. 0. cue ae 125W Linear Derating Factor ................00-. Leeae 1.0WIC 5C to + 150C PACKAGE DIMENSIONS 0.875 Ls (22.225) 2 35 max MAX 0.450 = (77.43) 9.250 (6.35) 0.1 (3.429) Ty ty 9.063 11.092) 0.312 (7.925) SEATING 0038 (0.968) tain PLANE 1.197 (30.404) [1477 (28.896) 0.675 (17,145) : 0.655 (16.637) te 0.188 i 4 (4.775) MAX / BOTH ENDS 0.go (11.176) 2 : sao Tosca OF 0420 770668) Nell te: a08s rd NOE ort (5835) 0.225 (5.715) be 0.526 , 205 5 207, > RMAX 0.205 8.207} BOTTOM VIEW (73.335) - 03 Pin 1 Gate Pin 2 Source TO-3 CASE Drain 045 (1.15) ox sy, 38 085 (7.38) [=o 280 (2.08 (5.85) V5 FR) | (6.85) | 500 (72.70) 580 (74.73) 9.181 (4.08) OA 538 (3.54) 250 16.35) 070 (1.74) 380 (9.86) q 420 (10.66) 400 2.54 _] 33 34% - 560 (14.23) [ 50 1651) "| Pin 1 Gate Pin 2 & TAB Drain Pin 3 Source 045 (1.75) TO-220AB 2-6 SiliconixELECTRICAL CHARACTERISTICS (Ic =25C unless otherwise noted) CyGddl = CySdal = bySdal = OpGdall Cypial = zcybial = bebdal = Opal Part : Parameter Nuimber Min Typ Max | Unit Test Conditions / Static inrsa0, 542 | 1 BV Drain-Source Breakdown , _ = S$ Voltage IRF141, 143 | V._| Ves =0, In=250uA iRF541, 543 | . Vasitn Gate Threshold Voltage All 2.0 4.0 v Vos= Ves: lp=1MA Igss_ Gate-Body Leakage +100 | nA | Vgg= +20V, Vos =0 - Zero Gate Voltage Drain 0.41 | 0.25 Vos = Rated Vpg, Vas = OV : Ipss All mA Current 0.2 | 1.0 Vpg = Rated Vpg, Vag = OV, Tg = 125C _ IRF 140, 141 a7 . ee IRF540, 541 . Ipjon) + On-State Drain Current A Vos = 28V. Vas'= 10V (Note 4) IRF 142, 143 24 IRF542,.543 Static Drain-Source On-State Ines40, at 9.07 ) 0.085 'DSen) Resi 2 | Veg =10V, Ip = 15A (Note 1) esistance IRF142, 143 o9 | 0.41 IRF542, 543 9. Dynamic . - Os Forward Transconductance All 6.0 10.0 Ss Vps = 25V, Ip =15A (Note 1) Ciss Input Capacitance 1275 | 1600 : Coss Output Capacitance All 550 | 800 PF | Veg =0, Vpg= 25V, f= 1 MHz Criss Reverse Transfer Capacitance 160 | 300 , tajon) Turn-On Delay Time All 16 30 tr Rise Time All 27 80 ns | Vpp=30V, Ip = 154, RL = 2, Ros 100 tary Turn-Off Delay Time All 38 80 tt Fall Time All 14 30 Drain-Source Diode Characteristics Vso. Forward On Voltage All ~2.50 Vv lg =-27A, Vgg = 0 (Note 1) te Reverse Recovery Time . Ail 250 ns lp =27A, Veg =0, di/dt = 100A/us Note 1: Pulse test 80 us to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 2 Reverse Recovery Test Circuit FIGURE 1 Switching Test Circuit Nv 502 di/dt Adjust (1+ 27 uH) _ 4* 5 TO 50uF IN4933 BFS! e)Adiust | k ~ s Vout i 2400 wwaoos 4000uF - 3 >} R$ 0.259 L $ 0.01uH | CIRCUIT iat. o ia. DAA UNDER Na723, | rr ed GENERATOR TEST 2N4204 [eenenAToR} [TT _ _ _ _ SCOPE PW. = 1 ps Cg <50 pF TYYT, , , DUTY CYCLE = 1% FROM TRIGGER CKT 7 Siliconix