IRL3103STRLPBF - INFINEON TECHNOLOGIES AG

IRL3103SPbF

IRL3103LPbF

HEXFET® Power MOSFET

04/19/04

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.6

RθJA Junction-to-Ambient (PCB mount)** ––– 40

Thermal Resistance

www.irf.com 1

VDSS = 30V

RDS(on) = 12mΩ

ID = 64A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A

IDM Pulsed Drain Current 220

PD @TC = 25°C Power Dissipation 94 W

Linear Derating Factor 0.63 W/°C

VGS Gate-to-Source Voltage ± 16 V

IAR Avalanche Current34 A

EAR Repetitive Avalanche Energy22 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRL3103L) is available for low-

profile applications.

lAdvanced Process Technology

lSurface Mount (IRL3103S)

lLow-profile through-hole (IRL3103L)

l175°C Operating Temperature

lFast Switching

lFully Avalanche Rated

lLead-Free

Description

D2Pak

IRL3103S

TO-262

IRL3103L

°C/W

PD - 95150

IRL3103S/LPbF

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode)––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V 

trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A

Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

220

 Starting TJ = 25°C, L = 220µH

RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to TJ = 175°C .

**When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to

application note #AN-994

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 12 VGS = 10V, ID = 34A 

––– ––– 16 VGS = 4.5V, ID = 28A 

VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA

gfs Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 34A

––– ––– 25 µA VDS = 30V, VGS = 0V

––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V

QgTotal Gate Charge ––– ––– 33 ID = 34A

Qgs Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 4.5V, See Fig. 6 and 13

td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 15V

trRise Time ––– 120 ––– ID = 34A

td(off) Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω

tfFall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10 

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 1650 ––– VGS = 0V

Coss Output Capacitance ––– 650 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5

EAS Single Pulse Avalanche Energy––– 1320130mJ IAS = 34A, L = 0.22mH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

RDS(on) Static Drain-to-Source On-Resistance

IGSS

LSInternal Source Inductance ––– 7.5 –––

LDInternal Drain Inductance ––– 4.5 –––

IDSS Drain-to-Source Leakage Current

mΩ

IRL3103S/LPbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

1000

0.1 1 10 100



s PULSE WIDTH

T = 25 C

J°



TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

0.1 1 10 100



s PULSE WIDTH

T = 175 C

J°



TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Volta

e (V)

I , Drain-to-Source Current (A)

2.7V

100

1000

2.0 3.0 4.0 5.0 6.0 7.0 8.0



V = 15V

s PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)



T = 25 C

J°



T = 175 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)



V =

I =

10V

56A

IRL3103S/LPbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

500

1000

1500

2000

2500

3000

V , Drain-to-Source Volta

e (V)

C, Capacitance (pF)



0V,

f = 1MHz

+ C

C SHORTED

iss

d , ds

rss

oss ds



Ciss



Coss



Crss

010 20 30 40

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)



FOR TEST CIRCUIT

SEE FIGURE

I =

34A



V = 15V

V = 24V

0.1

100

1000

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Volta

e (V)

I , Reverse Drain Current (A)



V = 0 V



T = 25 C

J°



T = 175 C

J°

1 10 100

VDS , Drain-toSource Volta

e (V)

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Sin

le Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

IRL3103S/LPbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1



Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C



t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

IRL3103S/LPbF

6www.irf.com

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150 175

120

160

200

240

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)



TOP

BOTTOM

14A

24A

34A

0.01

Ω

D.U.T

VDS

-VDD

DRIVER

15V

20V

VGS

IRL3103S/LPbF

www.irf.com 7

Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period







VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFET® power MOSFETs

IRL3103S/LPbF

8www.irf.com

D2Pak Part Marking Information (Lead-Free)

D2Pak Package Outline

Note: "P" in as s embly line

pos ition indicates "Lead-F ree"

F530S

T HIS IS AN IR F530S WIT H

LOT CODE 8024

AS S E MBL E D ON WW 02, 2000

IN T H E AS S E MB LY L INE "L "

ASSEMBLY

LOT CODE

INT E R NAT IONAL

R E CT IF IE R

LOGO

PART NUMBER

DAT E CODE

YEAR 0 = 2000

WEEK 02

LINE L

F530S

A = AS S E MB L Y S IT E CODE

WEEK 02

P = DES IGNATES LEAD-FREE

P R ODU CT (OPT ION AL)

RECTIFIER

INT E R NAT ION AL

LOGO

LOT CODE

ASSEMBLY

YE AR 0 = 2000

DAT E CODE

PART NUMBER

IRL3103S/LPbF

www.irf.com 9

TO-262 Part Marking Information

TO-262 Package Outline

ASSEMBLY

LOT CODE

R E CT IF IE R

INT E R NAT IONAL

AS S E MBLE D ON WW 19, 1997

Note: "P" in as s embly line

pos iti on indicates "L ead-F ree"

IN THE AS SEMBLY LINE "C" LOGO

THIS IS AN IRL3103L

LOT CODE 1789

EXAMPLE:

LINE C

DATE CODE

WEE K 19

YE AR 7 = 1997

PART NUMBER

LOGO

LOT CODE

AS S E MB L Y

INT E R NAT IONAL

R E CT IF IE R

PRODUCT (OPTIONAL)

P = DESIGNAT ES LEAD-F REE

A = AS S E MB L Y S IT E COD E

WEE K 19

YE AR 7 = 1997

DATE CODE

IRL3103S/LPbF

10 www.irf.com

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/04

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

1.85

(

.073

)

1.65

(

.065

)

1.60

(

.063

)

1.50

(

.059

)

4.10

(

.161

)

3.90

(

.153

)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50

(

.532

)

12.80

(

.504

)

330.00

(

14.173

)

MAX.

27.40

(

1.079

)

23.90

(

.9 4 1

)

60.00

(

2.362

)

M IN .

30.40

(

1.197

)

M AX.

26.40

(

1.039

)

24.40

(

.961

)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/