For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
1
HMC903LP3E
v04.1112
GaAs pHEMT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHz
General Description
Features
Functional Diagram
Low Noise Figure: 1.7 dB
High Gain: 18 dB
P1dB Output Power: 14 dBm
Single Supply Voltage: +3.5 V @ 80 mA
Output IP3: +25 dBm
50 Ohm matched Input/Output
16 Lead 3x3mm SMT Package: 9mm
Electrical Specications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2]
Typical Applications
This HMC903LP3E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
The HMC903LP3E is a self-biased GaAs MMIC Low
Noise Amplier housed in a leadless 3x3 mm plastic
surface mount package. The amplier operates
between 6 and 17 GHz, providing 18 dB of small
signal gain, 1.7 dB noise gure, and output IP3 of
+25 dBm, while requiring only 80 mA from a +3.5 V
supply. The P1dB output power of +14 dBm enables
the LNA to function as a LO driver for balanced, I/Q
or image reject mixers. The HMC903LP3E also fe-
atures I/Os that are DC blocked and internally mat-
ched to 50 Ohms, making it ideal for high capacity
microwave radios and VSAT applications.
Parameter Min. Ty p. Max. Min. Typ. Max. Units
Frequency Range 6 - 16 16 - 17 GHz
Gain [1] 16.5 18.5 23 18 dB
Gain Variation over Temperature 0.012 0.012 dB / °C
Noise Figure [1] 1.7 2.2 2.2 2.5 dB
Input Return Loss 12 11 dB
Output Return Loss 12 14 dB
Output Power for 1 dB Compression [1] 13 14.5 12 13 dBm
Saturated Output Power (Psat) [1] 16.5 16.5 dBm
Output Third Order Intercept (IP3) 22 25 22 25 dBm
Supply Current (Idd)
(Vdd = 3.5V, Vgg1 = Vgg2 = Open) 80 110 80 110 mA
[1] Board loss removed from gain, power and noise gure measurement.
[2] Vgg1 = Vgg2 = Open for normal, self-biased operation
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
2
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Gain vs. Temperature [1]
Output Return Loss vs. Temperature
Broadband Gain & Return Loss [1]
Input Return Loss vs. Temperature
Output IP3 vs. Temperature
Noise Figure vs. Temperature [1]
[1] Board loss removed from gain, power and noise gure measurement.
-25
-15
-5
5
15
25
3 5 7 9 11 13 15 17 19
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
6 8 10 12 14 16 18
+25 C +85 C -40 C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 8 10 12 14 16 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6 8 10 12 14 16 18
+25 C +85 C -40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
6 8 10 12 14 16 18
+25 C +85 C -40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
6 8 10 12 14 16 18
+25 C +85 C -40 C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
3
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Psat vs. Temperature [1]
Power Compression @ 12 GHz [1]
P1dB vs. Temperature [1]
Reverse Isolation vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 12 GHz [1]
[1] Board loss removed from gain, power and noise gure measurement.
[2] Board loss removed from gain measurement
[3] Data taken at Vdd1 = Vdd2 = 3V
Gain, Output IP3 & Idd vs. Gate
Voltage @ 12 GHz [2][3]
0
5
10
15
20
25
6 8 10 12 14 16 18
+25 C +85 C -40 C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
6 8 10 12 14 16 18
+25 C +85 C -40 C
Psat (dBm)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
6 8 10 12 14 16 18
+25 C +85 C -40 C
ISOLATION (dB)
FREQUENCY (GHz)
-4
0
4
8
12
16
20
24
-20 -17 -14 -11 -8 -5 -2 1 4
Pout Gain PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
3 3.5 4
P1dB GAIN
NF
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (V)
78
80
82
84
86
88
90
92
94
-30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3
Idd
Idd (mA)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
4
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Drain Bias Voltage +4.5V
RF Input Power +10 dBm
Gate Bias Voltage, Vgg1 -0.8V to +0.2V
Gate Bias Voltage, Vgg2 -0.8V to +0.2V
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 6.9 mW/°C above 85 °C) 0.45 W
Thermal Resistance
(Channel to ground paddle) 144.8 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 0, Passed 150V
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL
BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND
PATTERN.
Part Number Package Body Material Lead Finish Package Marking [1]
HMC903LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn [2] 903
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
Current vs. Input Power @ 12 GHz
0
5
10
15
20
25
30
0
20
40
60
80
100
120
-0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
Gain IP3
Idd
GAIN (dB), IP3 (dBm)
Idd (mA)
Vgg1, Vgg2 Gate Volltage (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
5
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 4, 5, 8, 9,
12, 13, 16 N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2, 11 GND Package bottom has exposed metal ground paddle
that must be connected to RF/DC ground.
3RFIN This pin is AC coupled
and matched to 50 Ohms
6, 7 Vgg1, Vgg2
Optional gate control for amplier. If left open, the amplier
will run self-biased at standard current. Negative volt-
age applied will reduce drain current. External capacitors
required, see application circuits herein.
10 RFOUT This pin is AC coupled
and matched to 50 Ohms
14, 15 Vdd2, Vdd1 Power supply voltage for the amplier. See assembly
for required external components.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
6
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Item Description
J1, J2 SMA Connector
J3, J4, J6 - J8 DC Pins
C1, C4, C7, C10 100 pF Capacitor, 0402 Pkg.
C2, C5, C8, C11 10 KpF Capacitor, 0402 Pkg.
C3, C6, C9, C12 4.7 µF Capacitor, Tantalum
U1 HMC903LP3E Amplier
PCB [2] 128395 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
List of Material for Evaluation PCB 129798 [1]
The circuit board used in this application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the pack-
age ground leads and exposed paddle should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Evaluation PCB
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
7
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Application Circuit - Standard (Self-Biased) Operation
Application Circuit - Gate Control, Reduced Current Operation
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIER - LOW NOISE - SMT
8
HMC903LP3E
v04.1112
GaAs pHEMPT MMIC LOW NOISE AMPLIFIER,
6 - 17 GHZ
Notes:
