PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified AUIRF6215 HEXFET(R) Power MOSFET D G S V(BR)DSS -150V RDS(on) max. 0.29 ID -13A D Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF6215 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V -13 ID @ TC = 100C Continuous Drain Current, VGS @ 10V -9.0 Pulsed Drain Current -44 IDM c PD @TC = 25C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d Units A 110 0.71 20 W W/C V mJ EAS Single Pulse Avalanche Energy (Thermally Limited) 310 IAR Avalanche Current -6.6 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and 11 -5.0 -55 to + 175 mJ V/ns dv/dt TJ TSTG c c e Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw C 300 10 lbf in (1.1N m) y Thermal Resistance Typ. Max. --- 1.4 Case-to-Sink, Flat, Greased Surface 0.50 --- Junction-to-Ambient --- 62 RJC Junction-to-Case RCS RJA g Parameter y Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 09/6/2010 AUIRF6215 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units -150 --- --- --- -2.0 3.6 --- --- --- --- --- -0.20 --- --- --- --- --- --- --- --- --- --- 0.29 0.58 -4.0 --- -25 -250 100 -100 Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA VGS = -10V, ID = -6.6A ,TJ=25C VGS = -10V, ID = -6.6A ,TJ=150C V VDS = VGS, ID = -250A S VDS = -50V, ID = -6.6A A VDS = -150V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150C nA VGS = 20V VGS = -20V f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 14 36 53 37 4.5 66 8.1 35 --- --- --- --- --- nC ns nH Conditions ID = -6.6A VDS = -120V VGS = -10V, See Fig. 6 & 13 VDD = -75V ID = -6.6A RG = 6.8 RD = 12 , See Fig. 10 Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 860 220 130 --- --- --- and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5 pF f D G S Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- -13 ISM (Body Diode) Pulsed Source Current --- --- -44 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 160 1.2 -1.6 240 1.7 c Notes: Conditions MOSFET symbol A V ns nC showing the integral reverse D G S p-n junction diode. TJ = 25C, IS = -6.6A, VGS = 0V TJ = 25C, IF = -6.6A di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS, Starting TJ = 25C, L = 14mH, Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) RG = 25, I AS = -6.6A. (See Figure 12) TJ 175C. R is measured at TJ approximately 90C. f AUIRF6215 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M3 (400V) AEC-Q101-002 ESD Human Body Model AEC-Q101-001 Charged Device Model RoHS Compliant Class H1B (1000V) Class C5 (1125V) AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. AUIRF6215 100 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 20s PULSE WIDTH Tc = 25C A -4.5V 1 1 10 -4.5V 1 -VDS , Drain-to-Source Voltage (V) 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C TJ = 175C 10 VDS = -50V 20s PULSE WIDTH 5 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics A 100 J Fig 2. Typical Output Characteristics, 100 4 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, 1 20s PULSE WIDTH TC = 175C 1 100 J 10 10 A I D = -11A 2.0 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature AUIRF6215 2000 -VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1200 Coss 800 Crss 400 0 1 10 100 A I D = -6.6A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 -VDS , Drain-to-Source Voltage (V) 20 40 60 80 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10s -I D , Drain Current (A) -ISD , Reverse Drain Current (A) VDS = -120V VDS = -75V VDS = -30V TJ = 175C 10 TJ = 25C 1 100s 10 1ms VGS = 0V 0.1 0.2 0.6 1.0 1.4 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage A 1.8 TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area A 1000 AUIRF6215 RD VDS 15 V GS D.U.T. RG 12 - -ID , Drain Current (A) + 9 VDD -10V Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 0 td(on) 25 50 75 100 125 150 175 TC , Case Temperature ( C) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 AUIRF6215 D.U.T RG IAS -20V tp VDD A DRIVER 0.01 15V Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) L VDS 800 TOP BOTTOM ID -2.7A -4.7A -6.6A 600 400 200 A 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -10V QG QGS 50K 12V .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 AUIRF6215 Peak Diode Recovery dv/dt Test Circuit D.U.T* + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG V GS * + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD [ ] Forward Drop Inductor Curent Ripple 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS [ ISD ] ] *** AUIRF6215 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF6215 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ AUIRF6215 Ordering Information Base part number Package Type Standard Pack AUIRF6215 TO-220 Form Tube Complete Part Number Quantity 50 AUIRF6215 AUIRF6215 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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