AUIRF6215
HEXFET® Power MOSFET
PD - 97564
Features
lAdvanced Planar Technology
lLow On-Resistance
lP-Channel
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to
Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified
09/6/2010
www.irf.com 1
GDS
Gate Drain Source
TO-220AB
AUIRF6215
S
D
G
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recover
y
dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
g
––– 1.4
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-5.0
11
310
-6.6
110
0.71
± 20
Max.
-13
-9.0
-44
-55 to + 175
300
10 lbf
y
in (1.1N
y
m)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
-150V
R
DS(on)
max. 0.29Ω
I
D
-13A
S
D
G
AUTOMOTIVE GRADE
AUIRF6215
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH,
RG = 25Ω, IAS = -6.6A. (See Figure 12)
Notes:
ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
S
tat
i
c
El
ectr
i
ca
l Ch
aracter
i
st
i
cs
@ T
J
=
2
5
°C (
un
l
ess
ot
h
erw
i
se
spec
ifi
e
d)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e -150 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– -0.20 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.29 Ω
––– ––– 0.58
V
GS(th)
Gate Threshold Volta
g
e -2.0 ––– -4.0 V
fs Forward Transconductance 3.6 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– -25
µ
A
––– ––– -250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 100 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
Q
g
Total Gate Char
g
e ––– ––– 66
Q
gs
Gate-to-Source Char
g
e ––– ––– 8.1 nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– ––– 35
t
d(on)
Turn-On Dela
y
Time –––14–––
t
r
Rise Time –––36–––
t
d(off)
Turn-Off Dela
y
Time –––53–––ns
t
f
Fall Time –––37–––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 860 –––
C
oss
Output Capacitance ––– 220 ––– pF
C
rss
Reverse Transfer Capacitance ––– 130 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– -13
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– -44
(Body Diode)
c
V
SD
Diode Forward Volta
g
e ––– ––– -1.6 V
t
rr
Reverse Recover
y
Time ––– 160 240 ns
Q
rr
Reverse Recover
y
Char
g
e ––– 1.2 1.7 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= -10V, I
D
= -6.6A
f
,T
J
=150°C
Conditions
V
GS
= -10V, See Fig. 6 & 13
f
V
DD
= -75V
I
D
= -6.6A
R
G
= 6.8 Ω
T
J
= 25°C, I
S
= -6.6A, V
GS
= 0V
f
T
J
= 25°C, I
F
= -6.6A
di/dt = 100A/
µ
s
f
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -6.6A
f
,T
J
=25°C
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -150V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= -50V, I
D
= -6.6A
I
D
= -6.6A
V
DS
= -120V
Conditions
R
D
= 12 Ω, See Fig. 10
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 20V
V
GS
= -20V
AUIRF6215
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
TO-220 N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5 (1125V)
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M3 (400V)
AEC-Q101-002
Human Body Model Class H1B (1000V)
AEC-Q101-001
AUIRF6215
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
1
10
100
1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
T = 175°C
J
V = -50V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -11A
D
JJ
AUIRF6215
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 20406080
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -6.6A V = -120V
V = -75V
V = -30V
DDS
DS
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
10µs
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
0
400
800
1200
1600
2000
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
AUIRF6215
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
3
6
9
12
15
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF6215
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
QG
QGS QGD
VG
Charge
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
0
200
400
600
800
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -2.7A
-4.7A
BOTTOM -6.6A
D
AUIRF6215
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
AUIRF6215
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF6215
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF6215
Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form Quantit
y
AUIRF6215 TO-220 Tube 50 AUIRF6215
AUIRF6215
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
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products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
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