© 2016 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C 150 V
VDGR TJ= 25C to 175C, RGS = 1M150 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C (Chip Capability) 360 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25C, Pulse Width Limited by TJM 900 A
IATC= 25C 100 A
EAS TC= 25C TBD J
PDTC= 25C 1670 W
dV/dt IS IDM, VDD VDSS, TJ 175°C 20 V/ns
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 150 V
VGS(th) VDS = VGS, ID = 8mA 2.5 5.0 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 50 A
TJ = 150C 5 mA
RDS(on) VGS = 10V, ID = 60A, Note 1 4.0 m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK360N15T2
IXFX360N15T2
VDSS = 150V
ID25 = 360A
RDS(on)
4.0m
trr
150ns
DS100181A(8/16)
Features
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 140 230 S
Ciss 47.5 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 3060 pF
Crss 665 pF
td(on) 50 ns
tr 170 ns
td(off) 115 ns
tf265 ns
Qg(on) 715 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 185 nC
Qgd 200 nC
RthJC 0.09C/W
RthCS 0.15C/W
Note 1. Pulse test, t 300s; duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 360 A
ISM Repetitive, Pulse Width Limited by TJM 1440 A
VSD IF = 60A, VGS = 0V, Note 1 1.2 V
trr 150 ns
QRM 0.50 C
IRM 9.00 A
IF = 160A, -di/dt = 100A/s
VR = 60V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1 (External)
Pins: 1 - Gate
2,4 - Drain
3 - Source
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5V
6V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
4V
Fig. 4. R
DS(on)
No rmalized to I
D
= 180A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 360A
I
D
= 180A
Fig. 2. Exte nded Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
012345678910
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
4V
5V
Fig. 5. R
DS(on)
No rmalize d to I
D
= 180A Va lue vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Dra in Current v s. Case Temperature
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9 . Fo rward Vo ltage Drop of Intrin s ic Diode
0
50
100
150
200
250
300
350
0.20.30.40.50.60.70.80.91.01.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 180A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100ms
External Lead Limit
DC
© 2016 IXYS CORPORATION, All Rights Reserved
IXFK360N15T2
IXFX360N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
100
140
180
220
260
300
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
0
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
100
120
140
160
180
200
220
t d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1, V
GS
= 10V
V
DS
= 75V
I
D
= 100A
I
D
= 200A
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
140
180
220
260
300
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 75V
I
D
= 200A
I
D
= 100A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
0
100
200
300
400
500
600
700
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
100
120
140
160
180
200
220
240
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1, V
GS
= 10V
V
DS
= 75V
T
J
= 25ºC
T
J
= 125ºC
Fig. 18. Resis tive Turn-off
Switching Times vs. Gate Resistance
100
200
300
400
500
600
700
800
900
12345678910
R
G
- Ohms
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
900
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125ºC, V
GS
= 10V
V
DS
= 75V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK360N15T2
IXFX360N15T2
IXYS REF:F_360N15T2(9V)8-19-09
Fig. 19 . Maximum Transient Thermal Im pe da nc e
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 19. Maximium Transien t Thermal Impe da nc e
.sadgsfgsf
0.200
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