BAV99 Small Signal Diode Connection Diagram 3 3 3 A7 2 1 2 1 2 1 SOT-23 Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM Tstg Tj TA = 25C unless otherwise noted Value Units 70 200 V mA 1.0 8.0 -55 to +150 -55 to +150 A A C C Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 300 microseconds Storage Temperature Range Operating Junction Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Electrical Characteristics Symbol VR VF IR CT trr Units 350 357 mW C/W TA = 25C unless otherwise noted Parameter Test Condition Breakdown Voltage Forward Voltage IR = 100A IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Leakage VR = 70V VR = 25V, TA = 150C VR = 70V, TA = 150C Total Capacitance VR = 0V, f = 1.0MHz Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100 (c) 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 Value Min. Max. Units 715 855 1.0 1.25 2.5 30 50 1.5 6.0 V mV mV V V A A A pF ns 70 www.fairchildsemi.com 1 BAV99 -- Small Signal Diode August 2011 BAV99 -- Small Signal Diode Typical Performance Characteristics 150 140 130 120 110 1 2 Ta= 25 C 300 Reverse Current, IR [nA] Reverse Voltage, V R [V] Ta= 25 C 3 5 10 20 30 50 250 200 150 100 50 0 100 Reverse Current, IR [uA] 10 20 30 50 70 100 Reverse Voltage, V R [V] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V Ta= 25 C Ta= 25 C 700 Forward Voltage, VF [mV] Forward Voltage, VF [mV] 450 400 350 300 650 600 550 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [mA] Forward Current, IF [uA] Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 1.3 Ta= 25 C Ta= 25 C Total Capacitance [pF] Forward Voltage, VF [V] 1.4 1.2 1.0 0.8 0.6 10 20 30 50 100 200 300 1.1 1.0 500 0 Forw ard C urrent, I F [m A ] 2 4 6 8 10 12 14 R everse V oltage [V ] Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA Figure 6. Total Capacitance vs Reverse Voltage (c) 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 1.2 www.fairchildsemi.com 2 400 Ta= 25 C 3.5 300 Current [mA] Reverse Recovery Time [nS] 4.0 3.0 2.5 2.0 200 IF (A V ) -A V ER AG ER E CT 100 IF IE DC U RR 1.5 EN TmA 0 1.0 10 20 30 40 50 0 60 50 100 150 o Ambient Temperature, T A [ C] Reverse Current [mA] Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) Power Dissipation, P [mW ] D 500 400 DO -35 P kg 300 SO T-23 P kg 200 100 0 0 50 100 150 200 o Average Tem perature, I O [ C ] Figure 9. Power Derating Curve (c) 2011 Fairchild Semiconductor Corporation BAV99 Rev. C1 www.fairchildsemi.com 3 BAV99 -- Small Signal Diode Typical Performance Characteristics (Continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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