DF005MA, DF01MA, DF02MA, DF04MA, DF06MA, DF08MA, DF10MA
www.vishay.com Vishay General Semiconductor
Revision: 16-Aug-13 1Document Number: 88572
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Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package DFM
IF(AV) 1 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 30 A
IR5 μA
VF at IF = 1.0 A 1.1 V
TJ max. 150 °C
Diode variations Quad
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Device marking code DFA005 DFA01 DFA02 DFA04 DFA06 DFA08 DFA10
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at TA = 40 °C IF(AV) 1.0 A
Peak forward surge current single
sine-wave superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t4.5A
2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Maximum
instantaneous
forward voltage
drop per diode
1.0 A VF 1.1 V
Maximum reverse
current at rated DC
blocking voltage
per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C 500
Typical junction
capacitance per
diode
4.0 V, 1 MHz CJ25 pF