DF005MA, DF01MA, DF02MA, DF04MA, DF06MA, DF08MA, DF10MA
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Revision: 16-Aug-13 1Document Number: 88572
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Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
UL recognition, file number E54214
Ideal for printed circuit boards
Applicable for automative insertion
High surge current capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package DFM
IF(AV) 1 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 30 A
IR5 μA
VF at IF = 1.0 A 1.1 V
TJ max. 150 °C
Diode variations Quad
~
~
Case Style DFM
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Device marking code DFA005 DFA01 DFA02 DFA04 DFA06 DFA08 DFA10
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at TA = 40 °C IF(AV) 1.0 A
Peak forward surge current single
sine-wave superimposed on rated load IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t4.5A
2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Maximum
instantaneous
forward voltage
drop per diode
1.0 A VF 1.1 V
Maximum reverse
current at rated DC
blocking voltage
per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C 500
Typical junction
capacitance per
diode
4.0 V, 1 MHz CJ25 pF
DF005MA, DF01MA, DF02MA, DF04MA, DF06MA, DF08MA, DF10MA
www.vishay.com Vishay General Semiconductor
Revision: 16-Aug-13 2Document Number: 88572
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Typical thermal resistance (1) RJA 40 °C/W
RJL 15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06MA-E3/45 0.403 45 50 Tube
20 40 60 80100 120 140 150
0
0.5
1.0
60 Hz
Resistive or
Inductive Load
P. C . B . M o unted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
Ambient Temperature (°C)
Average Forward Output Current (A)
110 100
0
5
10
15
20
25
30
1.0 Cycle
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Average Forward Output Current (A)
0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 50 °C
DF005MA, DF01MA, DF02MA, DF04MA, DF06MA, DF08MA, DF10MA
www.vishay.com Vishay General Semiconductor
Revision: 16-Aug-13 3Document Number: 88572
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
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Revision: 08-Feb-17 1Document Number: 91000
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