MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G Dual Switching Diode http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 STYLE 11 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* 1 ANODE MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 CATHODE/ANODE 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. M5C MG G 1 THERMAL CHARACTERISTICS M5C M G = Specific Device Code = Date Code* = Pb-Free Package Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1)TA = 25C Derate above 25C PD 225 mW 1.8 mW/C RqJA 556 C/W (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. PD 300 mW ORDERING INFORMATION 2.4 mW/C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Package Shipping MMBD7000LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBD7000LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD7000LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD7000LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device RqJA TJ, Tstg C/W 417 -55 to +150 C 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 6 1 Publication Order Number: MMBD7000LT1/D MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Min Max 100 - - - - 1.0 3.0 100 0.55 0.67 0.75 0.7 0.82 1.1 - 4.0 - 1.5 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mAdc) V(BR) Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125C) Vdc IR IR2 IR3 Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr Capacitance (VR = 0 V) C mAdc Vdc ns pF 820W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G CURVES APPLICABLE TO EACH DIODE I F, FORWARD CURRENT (mA) 100 TA = 85C TA = -40C 10 TA = 25C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 40 50 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 10 I R , REVERSE CURRENT (m A) TA = 150C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current C D , DIODE CAPACITANCE (pF) 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8.0 MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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